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Growth and characterization of 2-inch high quality β-Ga2O&
1.IntroductionGalliumoxide(Ga2O3)hasfivepoly-types,namely,α,β,γ,δ,andε.β-Ga2O3isthemoststableamongthem,belongingtothemonocliniccrystalsystem[1].Theban ...
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Collaborative R&D between multicrystalline silicon ingots and battery efficiency improvement
1.IntroductionMulticrystallinesilicon(mc-Si)isattractingincreasingattentionowingtoitshighefficiencyandlowcost[1–4].However,becauseofthepresenceofgrown ...
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Surface and optical properties of silicon nitride deposited by inductively coupled plasma-chemical v
1.IntroductionSiliconnitride(SiNx)hasbeenwidelyusedasthedielectricmaterialsintheprocessingofoptoelectronicsandmicroelectronicssemiconductordevicesbeca ...
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Hybrid AlGaInAs/Si Fabry–Pérot lasers with near-total mode confinements
1.IntroductionElectrically-pumpedlasersonsiliconareingreatdemandfortherecentdevelopmentsofsilicon-basedphotonicsintegrations[1,2].However,silicon-base ...
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The effect of parasitic charge on the output stability of MEMS gyroscopes
1.IntroductionInrecentyears,micro-electro-mechanicalsystem(MEMS)devicesarerapidlydevelopedwiththeadvancesofscienceandtechnology.Amongthem,MEMSgyroscop ...
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Room-temperature optically pumped InAs/GaAs quantum dots microdisk lasers on SiO2</sub
1.IntroductionThewhisperinggallerymode(WGM)resonatorhastheexcellentabilityofconfininglightviatotalinternalreflectionattheinterfacebetweenitshighrefrac ...
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Al-free cladding-layer blue laser diodes with a low aspect ratio in far-field beam pattern
1.IntroductionIII-nitridesemiconductorlaserdiodes(LDs)haveattractedagreatdealofattentionandmaderemarkableprogressinthelastfewyearsduetotheirgreatpoten ...
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Design and comparison of new fault-tolerant majority gate based on quantum-dot cellular automata
1.IntroductionAsthesizeofcomplementarymetal–oxide–semiconductor(CMOS)devicescontinuestoshrink,problemssuchashighpowerandlowreliabilityarepronetooccur, ...
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A low standby-power fast carbon nanotube ternary SRAM cell with improved stability
1.IntroductionHighSRAMcapacityandlowpowerdissipationaretwostringentrequirementsforadvancedcomputingandcommunicationsystems[1].TernarySRAMisanalternati ...
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A 0.7–7 GHz wideband reconfigurable receiver RF front-end in CMOS
1.IntroductionWiththeexplodinggrowthofthewirelesscommunicationmarkets,amobileterminalneedstobeabletosupportmultiplestandards.Thus,multimodetransceiver ...
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The simple two-step polydimethylsiloxane transferring process for high aspect ratio microstructures
1.IntroductionPolydimethylsioxane(PDMS)belongstoagroupofpolymericorganosiliconcompoundsthatarecommonlyreferredtoassilicones,whichisthemostwidelyusedsi ...
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Data-driven material discovery for photocatalysis: a short review
1.IntroductionTheuseofpredictivesimulationincombinationwithexperimentsfortheaccelerateddiscoveryandrationaldesignoffunctionalmaterialsisagrandchalleng ...
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Approaches to design inorganic semiconductors while maintaining structural motifs
1.IntroductionTheresearchesofsemiconductormaterialsanddevicephysics[1–9]havelargelysupportedthefastdevelopmentofinformationsociety.Eachtechnologythere ...
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Recent progress in Pb-free stable inorganic double halide perovskites
1.IntroductionRecentyearshavewitnessedtheprosperityofperovskite-basedsolarcellmaterials,representedbyorganic-inorganicmethylammoniumleadhalideperovski ...
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Crystal structure prediction in the context of inverse materials design
1.CrystalstructurepredictionasakeystepininversematerialsdesignIntraditionalcomputationalmaterialsscienceresearch,thecentralproblemthatissolvedispredic ...
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First-principle high-throughput calculations of carrier effective masses of two-dimensional transiti
1.IntroductionBesidesthebreakthroughfabricationofsingle-layeredgraphene[1,2],thetransition-metaldichalcogenides(TMDs)withMoS2astheprototypematerialbec ...
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A review: crystalline silicon membranes over sealed cavities for pressure sensors by using silicon m
1.IntroductionPressuresensorsareplayinganimportantroleinmodernindustries.SinceTufteetal.demonstratedasiliconpiezoresistivepressuresensorinthe1960s[1], ...
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Hot electron transport in wurtzite-GaN: effects of temperature and doping concentration
1.IntroductionTheoreticalcalculations[1–3]andexperimentalmeasurements[4–6]ofthecarriertransportcharacteristicsdepictthatwurtzitephasegalliumnitride(Wz ...
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Controlling morphology evolution of AlN nanostructures: influence of growth conditions in physical v
1.IntroductionAsanimportantIII–Vwideband-gap(~6.20eV)semiconductor,aluminumnitride(AlN)displaysmanyoutstandingproperties,suchashighbreakdownfield,high ...
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Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms
1.IntroductionAnenhancementmode(E-mode)GaN-basedhighelectronmobilitytransistor(HEMT)[1]isoneoftheemergingdevicesoftoday’stechnologyforradiofrequencyin ...
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Impact of crystal orientation and surface scattering on DG-MOSFETs in quasi-ballistic region
1.IntroductionAstheCMOStechnologycontinuesscalingdowntosub-10nmregime,theplanardevicesaregraduallybeingreplacedbynon-planardevices[1,2].Theintroductio ...
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Research on the hydrogen terminated single crystal diamond MOSFET with MoO3 d
1.IntroductionDiamondhasbeenconsideredastheultimatesemiconductormaterialduetoitsoutstandingproperties[1].However,thelackoflargeareasubstrateandsuitabl ...
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A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability
1.IntroductionAccompanyingthedevelopmentofIII-nitridesmaterialsanddevices,increasingattentionhasbeenpaidtotheGaN-basedresonatetunnelingdiode(RTD)becau ...
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Micro-plasma noise of 30 krad gamma irradiation broken-down GaN-based LED
1.IntroductionGaN-basedlight-emittingdiode(LED)asalightsourcedeviceaswellasthefrontoftheoptocoupleriswidelyusedinmilitaryandaerospacefields[1,2].There ...
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Comparative analysis of memristor models and memories design
1.IntroductionTheprincipalobjectivesoftherecentresearcharetoreducerequiredpower,area,andcostofsemiconductordeviceswithhighperformance,efficiency,andre ...
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A BFSK and OOK IF demodulation circuit with 2.8 μs settling time and re-configura
1.IntroductionNowadaysawirelessbodysensornetwork(BSN)iswidelyusedinhumanbodymonitoringsuchaselectroencephalogram(EEG),electrocardiogram(ECG)andwireles ...
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Emerging technologies in Si active photonics
1.Introduction:SiphotonicsoverviewSiphotonics,alsowidelyknownasgroupIVphotonics,referstointegratedopticalcircuitsonSiplatformtoachieveelectronic-photo ...
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Carrier transport mechanisms in semiconductor nanostructures and devices
1.IntroductionSemiconductornanostructuresareofgreatinterestandimportancetotheresearchcommunityduetotheirnovelpropertiesandinterdisciplinaryapplication ...
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Dopant atoms as quantum components in silicon nanoscale devices
1.IntroductionInthepastdecades,Moore’slawwasmaintainedbyapplyingsomenewstructuresandmaterials,suchashigh-kmaterialstoimprovetheabilityofgate,finstruct ...
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Controllable growth of GeSi nanostructures by molecular beam epitaxy
1.IntroductionEpitaxialofGeonSiisoneofthemostmaturematerialsystemsinheterogrowthofsemiconductors.Twoorthreedimensional(3D)confinedstructuresincludingG ...
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Research progress of Ge on insulator grown by rapid melting growth
1.IntroductionGeisapromisingchannelmaterialforMOSFETsduetoitssignificantlyhigherelectronandholemobilitythanSiandthecompatibilitywithCMOSprocesses[1,2] ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Recent progress in GeSn growth and GeSn-based photonic devices
1.IntroductionGroupIVlasersareofgreatinterestforachievingmonolithicintegrationoflaserswithothersiliconoptoelectronicdevicesonaSiplatform.Theseon-chipp ...
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Si nanocrystals-based multilayers for luminescent and photovoltaic device applications
1.IntroductionSilicon(Si)isconsideredasthemostimportantsemiconductormaterialforthemicroelectronicsandphotovoltaicsindustry.However,asatypicalindirectb ...
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Light-emitting diodes based on colloidal silicon quantum dots
1.IntroductionSiliconquantumdots(SiQDs)areusuallycrystallineSinanoparticlesthatarenomorethan~10nmlarge[1–4].ThequantumconfinementofSiQDscausesthemtobe ...
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Silicon-graphene photonic devices
1.IntroductionPhotonicintegratedcircuits(PICs)havebeenverypromisingformanyapplications,includingopticalinterconnectsindifferentscalesfromlong-haulnetw ...
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Ammonia sensing using arrays of silicon nanowires and graphene
1.IntroductionAmmonia(NH3)isanoxiousgasthatcanbelethalathighconcentrationsorlongexposuretimes.Itisbothproducedbynaturalprocessessuchasdecompositionofb ...
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The oscillations in ESR spectra of Hg0.76Cd0.24Te impl
1.IntroductionThepuremercurychalcogenideHgTewithzincblendestructurebelongstoauniquegroupofmaterialsexhibitingso-calledinvertedbandstructure[1]semimagn ...
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On correction of model of stabilization of distribution of concentration of radiation defects in a m
1.IntroductionInthepresenttime,theinfluenceofdifferenttypesofradiationprocessingonsemiconductorsisbeingintensivelyanalyzed[1–3].Oneactualreasonofthepr ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
The structure and magnetic properties of β-(Ga0.96Mn<su
1.IntroductionMagneticsemiconductorshaveattractedconsiderableattentionduetotheirpotentialapplicationsinspintronicdevices,suchasfastnonvolatilesemicond ...
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Lateral polarity control of III-nitride thin film and application in GaN Schottky barrier diode
1.IntroductionDuetotherequirementofhighcrystallinequalityandsmoothsurfacemorphologyinfabricationofoptoelectronicandelectronicdevices,GaN,AlNandAlGaNep ...
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Growth and characteristics of p-type doped GaAs nanowire
1.IntroductionRecently,III–Vsemiconductornanowires(NW)haveattractedgreatresearchinterestduetotheirsuperiorelectricalandoptoelectronicpropertiesforfutu ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enha
1.IntroductionInrecentyears,tunnelfieldeffecttransistors(TFETs)havebeenextensivelypreferredasaprominentdeviceduetotheiradvantagessuchasreducedsub-thre ...
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Self-assembled patches in PtSi/n-Si (111) diodes
1.IntroductionSchottkydiodesonthebaseofsilicide/siliconcontactmostwidelyusedbothinelectronicandoptoelectronicapplications,duetotheadvantageousproperti ...
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An improved large signal model of InP HEMTs
1.IntroductionInPhighelectronmobilitytransistors(HEMTs)havethecharacteristicsofhighelectronmobility,lownoise,lowpowerconsumptionandhighgain[1,2].InPHE ...
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An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate
1.IntroductionInrecentyears,theheterogeneousintegratedcircuits(HI)concepthasledtoanincreasedinterestinRFandmm-wavesystem-on-chip(SoC)applications[1–3] ...
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Asymmetric anode and cathode extraction structure fast recovery diode
1.IntroductionModernpowerdevicesneedtopossesshighvoltage,fastrecovery,lowforwardvoltagedropandsmallleakagecurrentcharacteristics[1].TheP–i–Ndiodesarec ...
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Frequency equation for the submicron CMOS ring oscillator using the first order characterization
1.IntroductionTheringoscillatorfindsvariousapplicationsintherangeofGHz,andvoltage-controlledoscillatorshavebeenwidelyusingit.ThelimitationofLCoscillat ...
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Design and implementation of quadrature bandpass sigma–delta modulator used in low-IF RF receiver
1.IntroductionWirelesscommunicationisbecomingmoreandmorepopular,andmobilephonesandWIFIhavealmostreplacedcordedphonesandwirednetworksindailylife.Asanot ...
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An advanced SEU tolerant latch based on error detection
1.IntroductionWiththedevelopmentofsemiconductortechnology,thesizeoftheintegratedcircuitisreducingandthesupplyvoltageisgettinglowerandlower,whichresult ...
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First principles study of structural, electronic and magnetic properties of SnGe
1.IntroductionInrecentyears,theclustersofdifferentmaterialshaveattractedagreatinterestandtheirstudyhasbecomeahottopicofresearchinbothphysicsandchemist ...
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