中科院半导体研究所研究生招生信息 - 中科院半导体研究所研究生院 - 中科院半导体研究所硕士博士

栏目导航+展开

最新更新更多

领限时大额优惠券,享本站正版考研考试资料!
优惠券领取后72小时内有效，10万种最新考研考试考证类电子打印资料任你选。涵盖全国500余所院校考研专业课、200多种职业资格考试、1100多种经典教材，产品类型包含电子书、题库、全套资料以及视频，无论您是考研复习、考证刷题，还是考前冲刺等，不同类型的产品可满足您学习上的不同需求。 ...
考试优惠券本站小编 Free壹佰分学习网 2022-09-19
Gallium oxide: promise to provide more efficient life
Despitebeingthelong-timemainstreamsemiconductorforbothlogicandpowerdevices,Siliconisnowfacingitsdilemmaandlimitationofscalabilityandmaterialpotential. ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Bulk gallium oxide single crystal growth
Galliumoxide,asanewtypeofultra-widebandgapsemiconductor,isexpectedtobeusedinpowerelectronicsandsolarblindUVphotodetectors.Themaincauseofresearchanddev ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to De
Asoneoftheultra-widebandgap(UWBG)semiconductingmaterials,galliumoxidehasattractivepropertieswithawidebandgapofabout4.8eVandahighbreakdownfieldofabout8 ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Growth and fundamentals of bulk β-Ga2O3</sub
1.IntroductionBetagalliumoxidehasattractedrapidlygrowinginterestinthepastdecadeandisconsideredapromisingcandidateforpowerdeviceapplications.Galliumoxi ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Progress of power field effect transistor based on ultra-wide bandgap Ga2O<
1.IntroductionThedevelopmentofpowerelectronicstechnologyiscloselyrelatedtotheperformanceofpowerdevices.Theemergenceofnew-generationpowerdevicesandpowe ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
A review of the most recent progresses of state-of-art gallium oxide power devices
1.IntroductionMotivatedbyachievinghighbreakdownvoltageandhighenergyconversionefficiencysimultaneously,ultra-widebandgapsemiconductormaterialsanddevice ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
A review of β-Ga2O3 single crystal
1.IntroductionRecently,β-Ga2O3hasattractedgreatattentionasanultrawideband-gapoxidesemiconductorforfuturepowerandphotodetectordevices.Inordertoachieveh ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga2</s
1.IntroductionGalliumoxides(Ga2O3)hasfivedifferentcrystalstructures,namely,α-,β-,γ-,ε-,andδ-phases[1].Amongthem,monoclinicβ-Ga2O3structureisthethermod ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Temperature-dependent electrical properties of β-Ga2O<s
1.IntroductionIII-oxidecompoundsemiconductorsholdgreatpotentialtopioneernewsemiconductor-basedtechnologies.Thismaterialsystem,includinggalliumoxide(Ga ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
β-Ga2O3 thin film grown on sapphire
1.Introductionβ-Ga2O3,asemiconductorwithabandgapenergyof4.6–4.9eVat300K[1,2],exhibitsagreatbreakdownelectricfieldof6–8MV/cm[3,4]andhightransparencyint ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Source-field-plated Ga2O3 MOSFET with a breakdown volt
1.IntroductionGalliumoxide(Ga2O3)hasrecentlyattractedsignificantattentionasanewsemiconductormaterialforhigh-powerandhigh-efficiencyapplicationsinrecen ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Heteroepitaxial growth of thick α-Ga2O3</sub
1.IntroductionGalliumoxide(Ga2O3),arepresentativeultra-widebandgap(UWBG)semiconductingmaterial,hasattractedconsiderableattentionintheapplicationsofpow ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β-Ga&
1.IntroductionBetagalliumoxide(β-Ga2O3),withalargebandgapofabout4.8eVandahightheoreticalbreakdownelectricfieldof8MV/cm[1,2],hasgainedprominentattentio ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3</s
1.IntroductionOxidethinfilmisakindofessentialmaterialsinsemiconductordevices.Silicondioxide,asakindofdielectricmaterial,hasbeenplayingavitallyimportan ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Structural and thermoelectric properties of copper sulphide powders
1.IntroductionThermoelectricmaterialshaverecentlyattractedagreatdealofattentionowingtotheirpotentialapplicationsasalternativegreenenergysources.Thethe ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Optical absorption via intersubband transition of electrons in GaAs/AlxGa<
1.IntroductionMulti-quantumwells(MQWs)withfavorableopticalpropertiesatmid-infraredandfar-infraredwavelengthrangearewidelyusedinthedevelopmentoftheopto ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Influence of precursor solution concentration on the structural, optical and humidity sensing proper
1.IntroductionThedevelopmentofnanoscienceandnanotechnologyisbasedonsynthesismethodsproducingdifferentnanostructures,whichincreasesthesurfacetovolumera ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Boron-rich layer removal and surface passivation of boron-doped p–n silicon solar cells
1.IntroductionN-typeSisolarcellsareofgreatinterestforwidespreadphotovoltaicapplications.Theyexhibitmanyadvantagescomparedtop-typeSisubstrates,suchashi ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Hydrodynamic simulations of terahertz oscillation in double-layer graphene
1.IntroductionThediscoveryofgrapheneopenedanewerainmaterialsciencesince2004[1].Grapheneconsistsofjustasinglelayerofcarbonatomsarrangedinahexagonallatt ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Effect of RF power on the structural and optical properties of ZnS thin films prepared by RF-sputter
1.IntroductionZincsulphide(ZnS)isabroadbandsemiconductorII–VI[1].Itisapotentialnon-toxicalternativetocadmiumsulphide(CdS)asabufferlayer.CdShasbeenwide ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Visible light photocatalytic dye decomposition behaviour of solid state reaction grown Zn
1.IntroductionTheheterogeneousphotocatalysisprocesshasbeenfoundtobeverypromising,forinstancethegenerationofgreenfuel(H2)bysplittingofwater,sterilizati ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
High infrared transmittance CdS single crystal grown by physical vapor transport
1.IntroductionAsoneoftheII–VIcompounds,cadmiumsulphide(CdS)isanimportantsemiconductorwithbothphotovoltaiceffectandpiezoelectriceffectproperties.Ithasb ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
The effect of oxygen on the epitaxial growth of diamond
1.IntroductionDiamondisaveryexcellentwidebandgapsemiconductormaterial,andithasmuchmoresuperiorphysicalpropertieswhencomparedtoothercurrentlyusedwideba ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Effect of substrate temperature on the physical properties of SnS2:Cu thin fi
1.IntroductionTindisulfide,firstsynthesizedabout200yearsago[1],hasbeenappliedtovariousoptoelectronicdevicesandsolarcollectors[2–11].Fromtheexperimenta ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Structural and dielectric properties of prepared PbS and PbTe nanomaterials
1.IntroductionPbSandPbTebelongtotheclassofA4B6narrow-gapsemiconductingmaterialswithcovalentbonds.Electronscangainoptical,thermalorelectricalenergytotr ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Electrical contacts to two-dimensional transition-metal dichalcogenides
1.IntroductionOverthepast50years,Moore'sLaw,whichguidesthetransistorscalingdownto10nm[1,2],hasbeenthegoldenruleforsemiconductorindustry.Alargenumberof ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Analysis and performance exploration of high performance (HfO2) SOI FinFETs o
1.IntroductionToday,humanlifeinallpracticalaspectsisaffectedbyelectronicindustries,andlowpowerandhigh-performanceportabledeviceshavebecomethemajorrequ ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Static performance model of GaN MESFET based on the interface state
1.IntroductionDuetothegoodmetallurgicalproperties,wideoperatingtemperaturerange,andradiationtolerance,theMESFETresonanttunnelingdiode(RTD)hasbeenwidel ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Simulation study of a 4H-SiC lateral BJT for monolithic power integration
1.IntroductionDuetoitsexcellentmaterialproperties,siliconcarbide(SiC)offerssomeuniqueadvantageslikehighswitchingspeedandhighoperatingtemperature,makin ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Influence of well doping on the performance of UTBB MOSFETs
1.IntroductionWiththedevelopmentofCMOStechnology,thedeviceisscalingdowntosub20nmbutfacesmoreandmorechallenges,especiallytheshort-channeleffect.Fullyde ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Effect of phosphor sedimentation on photochromic properties of a warm white light-emitting diode
1.IntroductionIncandescentandfluorescentlightingwerekeyadvances;light-emittingdiode(LED)lightingisasimilarlycrucialadvance.Asanewtypeofhighly-efficien ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors
1.IntroductionInrecentyears,highelectronmobilitytransistors(HEMT)biosensorshavebeenappliedtodetectproteinandDNAconcentration[1–5].Highelectronmobility ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Design of a C-band polarization rotator-splitter based on a mode-evolution structure and an asymmetr
1.IntroductionInrecentyears,photonicintegratedcircuits(PICs)haveattractedwideattentionduetotheirlowpowerconsumption,highdatatransmissionrateandsmallch ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Analysis and parameter extraction of memristive structures based on Strukov’s non-linear model
1.IntroductionAftertheoriginalmodelformemristorsproposedbyStrukovetal.[1],someotherimportantproposalshaveappeared[2–4].Thoseformeranalysesdescribedist ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Fabrication, electrical and photovoltaic characteristics of CuInGeSe4/n-Si di
1.IntroductionCubaseduponquaternarycompoundsofCu2–II–IV–VI4andCu–III–IV–VI4areinterestingmaterialsforphotovoltaicapplicationssincetheseproductsdisplay ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Impact of strained silicon on the device performance of a bipolar charge plasma transistor
1.IntroductionThecontinuousscalingdownoftransistorsalongwiththedemandforhigh-speedandlow-powerdevicesinbothanaloganddigitalcircuitshasresultedintheexp ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Nonlinear dynamics in a terahertz-driven double-layer graphene diode
1.IntroductionSincegraphenewassuccessfullyfoundin2004[1],ithasattractedalotofinterestduetoitsfascinatingphysicalandchemicalproperties.Thetwo-dimension ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer
1.IntroductionTheZnOfilmwithwidebandgaphasthecharacteristicsoflowcost,hightransparency,lowresistivity,andlargeexcitonbindingenergy(60meV).Itisagoodcan ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Experimental research on the relationship between bypass diode configuration of photovoltaic module
1.IntroductionPhotovoltaic(PV)hotspotsareawell-knownphenomenonthatweredescribedasearlyas1969[1]andarestillpresentinPVmodules[2–4].The?mechanism?ofhots ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Model of NBTI combined with mobility degradation
1.IntroductionThethresholdorflat-bandvoltageshift(ΔVthorΔVfb)iswidelyacceptedastheuniqueparametricevaluationofthelevelofnegativebiastemperatureinstabi ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
3D modelling based comprehensive analysis of high-κ gate stack graded channel dua
1.IntroductionTheunremittingdevicescalingforcontinuousgrowthofsilicontechnologyhasresultedinhigherdevicedensityalongsidetheextraordinaryfunctionalcapa ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Experimental comparison of SiC GTO and ETO for pulse power applications
1.IntroductionTherehasbeenanincreasingdemandforadvancedpowerdistributionsystemsandpulsepowersystemsinrecentyears[1–3].Highpowerthyristorsbasedontradit ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application
1.IntroductionAnISMbandat245GHzisavailableinEurope,whichcouldbeusedforimagingradar[1,2],securityapplications,bio-medicalsensorsformedicaldiagnostics,m ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
A fast-locking bang-bang phase-locked loop with adaptive loop gain controller
1.IntroductionPhaselockedloop(PLL)isacriticalsub-systemformanyapplicationssuchaswirelesstransceiver,highspeedanalog-to-digitalconverters(ADC)andsystem ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
A novel power-on-reset circuit for passive UHF RFID tag chip
1.IntroductionRecently,passiveultrahighfrequency(UHF)radiofrequencyidentification(RFID)hasbeenconsideredasoneofthemostpromisingtechnologiesfortheadvan ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
A 0.6-V, 69-dB subthreshold sigma–delta modulator
1.IntroductionWiththecontinuousscalingofprocessandpowersupplyvoltage,thedesignofmixed-signalintegratedcircuitsisfacingunprecedentedchallenges.Inrecent ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
On-chip bias circuit for W-band silicon–germanium power amplifier
1.Applicationanddesignproblems77GHzsilicon–germanium(SiGe)poweramplifiershaveshowngoodperformanceinautomotiveradars,andthecheapercostofSiGetechnologyc ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
A congestion-aware OE router employing fair arbitration for network-on-chip
1.IntroductionWiththegrowingcommunicationdemand,thehighlyscalable,reusable,andparallelnetwork-on-chip(NoC)hasbecomeaneffectivesolutionforintegratedcir ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Design of a 3D Wilkinson power divider using through glass via technology
1.IntroductionSiliconinterposershavebeenwidelyadoptedin2.5Dand3-Dintegrationforinterconnectingintegratedcircuits(ICs)toprintcircuitboards[1].However,t ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
An 8–18 GHz power amplifier with novel gain fluctuation compensation technique in 65 nm CMOS
1.IntroductionPoweramplifiers,whichconsumethemostenergyintheT/Rmodule,arethekeycomponentsinaradarphasedarraysystem.Wideoperationband,highpoweraddedeff ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
VIP万种考研考证电子书、题库、视频随便看,每本不到一分钱!
平常需要几十块钱一本的电子书，开了VIP会员任您畅读。VIP会员均可免费使用本站在售的万余种考研考证基础类产品（电子书、题库、视频课程、全套资料等）。万种考研考证电子书、题库、视频随便看，每本不到一分钱。产品涵盖全国500余所院校考研专业课、200多种职业资格考试、1100多种经典教材，产品类型包含电子书、题库、全套资料以及视频，无论您是考研复习、考证刷题，还是考前冲刺等，不同类型的产品可满足您学习上的不同需求。 ...
半年VIP购买本站小编 Free壹佰分学习网 2022-09-19

1769 首页上一页 9 10 11 下一页尾页