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Design and analysis of a NMOS triggered LIGBT structure for electrostatic discharge protection
1.IntroductionESDisoneofthemostimportantresearchissuesaboutICreliability.ESDbringstransienthighvoltageandhighcurrent,whichwillcausedamagetothechipincl ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Magneto-transport properties of the off-stoichiometric Co2MnAl film epitaxial
1.IntroductionHeuslercompoundshavedrawnmuchattentioninrecentyearsduetotheirhighCurietemperature(TC)[1,2]andflexibletunability[3–6],makingthemcomplexan ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Realizing super-long Cu2O nanowires arrays for high-efficient water splitting
1.IntroductionSinceFujishimaandHondainitially,in1972,reportedhydrogengenerationinaphotoelectrochemicalwatersplittingdevicebyintroducingtheTiO2electrod ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs
1.IntroductionGaN,whichisanimportantsemiconductormaterial,anditsrelatedalloys(AlInGaN)haverecentlyattractedwideattention[1,2].Becauseoftheirlargebandg ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes
1.IntroductionInGaN-basedgreenlaserdiodes(LDs)arehighlydemandedforlaserdisplayapplicationsandthereforehaveattractedintensiveconcern[1],butlaserdisplay ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge
1.Introduction4H-siliconcarbide(4H-SiC)MOSFETsareattractiveforconvertersandinverterswhichrequirefastswitchingspeedandlowspecificRon,sp,owingtosuperior ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
A novel design approach of charge plasma tunnel FET for radio frequency applications
1.IntroductionWiththeadventofMOSFET,technologyoverthepastfewdecadeshasreachedtonewheights.ThedimensionsofMOSFETinthelastdecadehasbeenreducedbythreeord ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Supersymmetric laser arrays
SEMICONDUCTORLASERSSupersymmetriclaserarraysScience,363,623–626(2019)Supersymmetry(SUSY)emergedwithinparticlephysicsasameanstorelatetwofundamentallydi ...
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Signatures of moire excitons
OPTICALPROPERTIESOF2DMATERIALSSignaturesofmoireexcitonsNature,2019,doi:10.1038/s41586-019-0957-1InvanderWaalsheterostructuresofatomicallythin2Dmateria ...
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Rational molecular passivation for high-performance perovskite light-emitting diodes
PEROVSKITESEMICONDUCTOROPTOELECTRONICDEVICESRationalmolecularpassivationforhigh-performanceperovskitelight-emittingdiodesNat.Photonics,2019,doi:10.103 ...
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Surface passivation of perovskite film for efficient solar cells
PEROVSKITESEMICONDUCTOROPTOELECTRONICDEVICESSurfacepassivationofperovskitefilmforefficientsolarcellsNat.Photonics,2019,doi:10.1038/s41566-019-0398-2Th ...
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Li/C composites as anodes for high energy density rechargeable Li batteries
Currentlithium(Li)ionbatteriesconsistingofgraphiteastheanodeandintercalationmaterials(suchasLiCoO2,LiNixCoyMn1-x-yO2,LiNi0.8Co0.1Al0.1O2)asthecathodes ...
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Recent progress of the optoelectronic properties of 2D Ruddlesden-Popper perovskites
1.IntroductionOriginally,theword‘perovskite’originallydescribedamineralcalciumtitanate(CaTiO3)thatwasdiscoveredintheUralMountainsofRussiaandnamedafter ...
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Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals
1.IntroductionGalliumantimonide(GaSb)isanimportantsemiconductormaterialforfabricatinginfraredopto-electronicdevicesandthermophotovoltaiccells.Inpartic ...
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Origin of the anomalous trends in band alignment of GaX/ZnGeX2 (X = N, P, As,
1.IntroductionBandoffsetsbetweentwosemiconductorsAXandBYplayavitalroleinelectronicdevices,becausetheycanleadtodifferentelectronquantumconfinementsandd ...
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Second generation fully differential current conveyor based analog circuits
1.IntroductionFullydifferential(FD)[1–4]circuitshavebecomethemostwidely-usedconfigurationsinthedesignofelectroniccircuitsandsystemsbecausetheyprovideb ...
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Improving the data retention of phase change memory by using a doping element in selected Ge<sub&
1.IntroductionPhasechangememory(PCM)hasemergedasapromisingcandidateforfuturenon-volatilememory(NVM)thanksitslowpowerconsumption,fastoperatingspeed,hig ...
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Large-scale, adhesive-free and omnidirectional 3D nanocone anti-reflection films for high performanc
1.IntroductionPhotovoltaic(PV)systemshavebeenwidelydeployedasamajorrenewableenergyresourceinourdailylifebecausetheycandirectlyconvertsolarenergyintocl ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semico
1.IntroductionGaNandAlNalloysaregoodchoicesforthefabricationofoptoelectronicsandelectronicdevices,suchaslight-emittingdiodes,ultravioletdetectors,andh ...
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The energy-level and vibrational frequency properties of a polaron weak-coupled in a quantum well wi
1.IntroductionQuantumstructuresinlow-dimensionalmaterials(LDM)havebeenemployedpowerfullyinthelasttwentyyearsduetotheirfundamentalphysicalproperties[1, ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
High density three dimensional integration of organic transistors
ORGANICFLEXIBLEELECTRONICSHighdensitythreedimensionalintegrationoforganictransistorsNat.Commun.,2019,doi:10.1038/s41467-018-07904-5Withlowtemperatures ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Direct or indirect band gap
SEMICONDUCTORTHEORYDirectorindirectbandgapPhys.Rev.B,98,245203(2018)Thedirectorindirectnaturetothebandgapofasemiconductorisafundamentalproperty.Despit ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Healthcare electronic skin devices
Electronicskin(e-skin),akindofflexiblesensorarraysandsystemthatmimicthepropertiesandsensingfunctionsofhumanskin,representsanewparadigmofsensingandcont ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Growth behavior and electronic properties of Gen + 1 and A
1.IntroductionStudyingclustersofvariouschemicalelementshasbecomeamodernresearchtopicinbothphysicalandchemicalcommunitiesoverthelastfourdecades[1,2],du ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Influence of defect states on the performances of planar tin halide perovskite solar cells
1.IntroductionMethylammoniummixedleadhalides(MAPbXs),whichareknownfortheirexcellentopticalandelectricalproperties,havedrawnagreatdealofattentionforpho ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting di
1.IntroductionGaN-basedLEDshavemadesignificantprogressrespectinginternalquantumefficiency,forwardvoltage,andchipdesigntoprovidehighperformanceoverabro ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Photovoltaic properties of Cu2O-based heterojunction solar cells using n-type
1.IntroductionSincep-typecuprousoxide(p-Cu2O)hasahightheoreticalconversionefficiencyofabout20%,ithaslongattractedresearchattentionasasolarcellmaterial ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Optimization of broadband omnidirectional antireflection coatings for solar cells
1.IntroductionBroadbandandomnidirectionalantireflectionisoneofthemostdesirablecharacteristicsforhigh-efficiencysolarcellstoallowmaximumlighttransmissi ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Pyramid size control and morphology treatment for high-efficiency silicon heterojunction solar cells
1.IntroductionSiliconheterojunction(SHJ)solarcellsareattractingmoreandmoreinterestfrombothacademiaandindustrialcommunities,duetothemeritsoftheirhighef ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Bandgap engineered novel g-C3N4/G/h-BN heterostructure
1.IntroductionGraphene,asinglelayerofsp2-bondedcarbonatomshavinga2Dhoneycomblattice,istheprimaryelementforallothergraphiticformslikefullerenesandcarbo ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Numerical simulation of UV LEDs with GaN and BGaN single quantum well
1.IntroductionGroupIIIAnitridessuchasgalliumnitride(GaN),andaluminumnitride(AlN)areusedinmanydevices;theyhaveanimportanceforelectronicandoptoelectroni ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Warm white light emission
WarmwhitelightemissionNature,563,541–545(2018)Materialswithefficientandstablewhitelightemissionareindispensableforsolid-statelightinganddisplayapplica ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
High performance terahertz laser
HighperformanceterahertzlaserNaturePhotonics,13,47?53(2019)Foranylaser,highpower,goodbeamquality,andbroadelectricalfrequencytuningrangearedeemedasthek ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Subthreshold analog techniques
LOWPOWERCIRCUITSubthresholdanalogtechniquesIEEEJ.Solid-StateCircuits,2019,doi:10.1109/JSSC.2018.2889847Lowpowerisafundamentalrequirementinstate-of-the ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
A 130-nm ferroelectric nonvolatile system-on-chip for internet of things
A130-nmferroelectricnonvolatilesystem-on-chipforinternetofthingsIEEEJ.Solid-StateCircuits,2019,doi:10.1109/JSSC.2018.2884349Nonvolatileprocessor(NVP)i ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Magnetoelectric spin–orbit logic
Magnetoelectricspin–orbitlogicNature,565,35–42(2019)Inthelastdecade,transistorscalinghasbeenenabledbydirectimprovementstothecarriertransportandsuperio ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Remembering John Bardeen: inventor of transistor
Onceofmostremarkablescientificinventionsthathasinfluencedourdailylivesaswelltechnologicaldevelopmentsallovertheworldisthe“transistor”.Beinginventedin1 ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
A novel spin-FET based on 2D antiferromagnet
Engineeringtheelectronicbandstructureofmaterialsystemsenablestheunprecedentedexplorationofnewphysicalpropertiesthatareabsentinnaturaloras-syntheticmat ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Quantum-optical analogies of dimer structures
Inthepastdecades,engineeredphotonicwaveguidesandotherstructureshaveprovidedanextremelyrichlaboratorytooltovisualizewithopticalwavestheclassicanalogues ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Three-dimensional hierarchical CuO gas sensor modified by Au nanoparticles
1.IntroductionSincethegassensitivityofthematerialwasdiscovered,ithasbeenwidelyconcernedinthefieldofgasdetection.Thegassensorshavebeenwidelyused,includ ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
High-performance RF Switch in 0.13 μm RF SOI process
1.IntroductionRFfront-endmodules(FEMs)havebecomeincreasinglyprominentwiththeincreasein4Gand5Gmobilecommunicationwhichisrequiredformulti-bandandmulti-m ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
High performance active image sensor pixel design with circular structure oxide TFT
1.IntroductionThepotentialofamorphousoxidesemiconductors(AOS)forapplicationsinlargeareatransparentand/orflexibleelectronicdeviceshasgeneratedanincredi ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Mobility impact on compensation performance of AMOLED pixel circuit using IGZO TFTs
1.IntroductionDuetotherapiddevelopmentinrecentyears,indiumgalliumzincoxide(IGZO)thinfilmtransistors(TFTs)areexpectedtobethedominanttechnologyforthenex ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime lon
1.IntroductionGaN-basedlaserdiodes(LDs),owingtotheirbroadstimulatedwavelengthrangeandsmalldevicesize,haveattractedagreatdealofattentiontotheapplicatio ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
2D study of AlGaN/AlN/GaN/AlGaN HEMTs’ response to traps
1.IntroductionNowadays,AlGaN/AlN/GaNhigh-electronmobilitytransistor(HEMT)technologyisincreasinglyattractinginterestfromresearchersduetoAlGaN’swideband ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Development of a particle swarm optimization based support vector regression model for titanium diox
1.IntroductionTitaniumdioxide(TiO2)isawidebandgapandn-typesemiconductorthatofferspromisingpotentialinseveraltechnologicalandindustrialapplicationswhic ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics
1.IntroductionEpitaxial4H-siliconcarbide(4H-SiC)Schottkybarrierdiode(SBD)detectorscanbesuitableforastronomyradiationimagingsystemsbyconsideringtheirat ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Si photocathode
WATERSPLITTINGSiphotocathodeAppl.Catal.BEnviron.,237,158–165(2018)Siisapromisingphotocathodematerialforphotoelectrochemical(PEC)watersplitting,whilede ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Porous Ni–O/Ni/Si photoanode
PHOTOELECTROCHEMISTRYPorousNi–O/Ni/SiphotoanodeChem.Commun.,2019,doi:10.1039/C8CC08146HPhotoelectrochemical(PEC)watersplittingisanattractivestrategyto ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Detecting forbidden Raman modes
2DLAYEREDMATERIALSDetectingforbiddenRamanmodesSci.Adv.4,eaau6252(2018),doi:10.1126/sciadv.aau6252Inthecommonlyusedback-scatteringRamanconfiguration,so ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
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