1.International Center for Materials Discovery, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China 2.Department of Materials Engineering, Taiyuan Institute of Technology, Taiyuan 030008, China
Fund Project:Project supported by the Foreign Talents Introduction and Academic Exchange Program of China (Grant No. B08040)
Received Date:01 February 2021
Accepted Date:28 June 2021
Available Online:15 August 2021
Published Online:05 November 2021
Abstract:The thermal-mechanical properties of transition metal carbonitrides can be affected by the concentration and ordering of vacancies besides the C/N atomic ratio. However, there are few reports on the vacancy ordered structure of ternary transition metal carbonitrides. In the present paper, the first-principles method is used to study the vacancy ordered structures, mechanical properties, electronic properties and the effect of vacancies on the ternary Hf-C-N system. Firstly, the crystal structures of Hf-C-N system is examined by the first-principles and evolutionary algorithms implemented in USPEX under ambient pressure, and eight thermodynamical stable vacancy ordered structures are found, each of which has a rock-salt structure, and is also dynamical and mechanical stable, which are verified by the calculations of their phonon dispersion curves and elastic constants. The vacancies are occupied at the [Hf6] octahedral interstices, which replace the positions of non-metal atoms. Their crystallographic data such as space group, lattice constants are also predicted. To the best of our knowledge, there is no report on the Hf-C-N vacancy ordered structures and these structures investigated here in this work are all found for the first time. Then their mechanical properties are calculated. The Hf-C-N vacancy ordered structures all have very high bulk, shear and elastic modulus and hardness. It is found that except for C∶N = 1∶4, for the Hf-C-N system with the same C/N ratio the moduli, Vickers hardness values, and Pugh’s ratios decrease with the increase of the concentration of vacancy. However, the Vickers hardness of Hf6CN4 (the concentration of vacancy is equal to 1/6) is higher than that of Hf5CN4 (no vacancy), that is so-called vacancy hardening. Finally, the electronic density of states and the crystal orbital Hamilton populations are calculated. The chemical bonding of Hf-C-N vacancy ordered structure is analyzed, which is a mixture of covalence and metallic and is similar to that of binary transition metal carbides and nitrides. With the increase of the concentration of vacancy, the total bond strength decreases, and then the modulus decreases for Hf-C-N compound. Keywords:Hf-C-N vacancy ordered structure/ vacancy/ Vickers hardness/ a first-principles method
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3.1.晶体结构预测及Hf-C-N空位有序结构
由于Hf-C-N体系的性质受到空位浓度的影响, 首先采用空位调控的方法, 对三元Hf-C-N体系的组分进行设计, 采用晶体结构预测软件USPEX[39-41]结合VASP[51], 搜索了三元空位有序结构. 图1(a)为三元Hf-HfC-HfN体系的能量凸包图, 反应焓ΔH (eV/atom)的计算公式如下: 图 1 (a) 常压下, 三元Hf-HfC-HfN体系的能量凸包图, 黑色球表示热力学稳定结构, 其他为亚稳结构; (b) Hf-C-N空位有序结构的X射线衍射模拟图谱, 衍射源为Cu Kα射线 Figure1. (a) Enthalpy convex-hull of ternary Hf-HfC-HfN system at ambient pressure. The black sphere indicates stable structure, and others are metastable structure. (b) The simulated X-ray diffractions of Hf-C-N vacancy ordered structures with a copper Kα X-ray source.
表1Hf-C-N空位有序结构的空间群、晶格常数、反应焓ΔH (eV/atom)、Hf原子的配位数(CN) 和空位浓度(CV) Table1.Space group, lattice constants, the enthalpy of reaction ΔH (eV/atom), coordination number (CN) of Hf and the concentration of vacancy (CV) of Hf-C-N vacancy ordered structures.
图 5 (a) Hf6C4N-$C2 $/m, (b) Hf6C3N-$C2 $, (c) Hf6C3N2-$C2 $/m, (d) Hf3CN-$C2 $, (e) Hf6C2N3-$C2 $, (f) Hf4CN2-Cmmm, (g) Hf6CN3-$C2 $/m和(h) Hf6CN4-$C2 $/m的态密度和分态密度; (i) Hf3CN和Hf2CN的总态密度对比; 其中Fermi能级位于0 eV Figure5. Density of state (DOS) and partial density of state (PDOS) normalized by per HfCxNy of (a) Hf6C4N-$C2 $/m, (b) Hf6C3N-$C2 $, (c) Hf6C3N2-$C2 $/m, (d) Hf3CN-$C2 $, (e) Hf6C2N3-$C2 $, (f) Hf4CN2-Cmmm, (g) Hf6CN3-$C2 $/m and (h) Hf6CN4-$C2 $/m; (i) the total DOS of Hf3CN and Hf2CN normalized by per HfCxNy. The Fermi level is at 0 eV.
图 6 Hf-C-N化合物的晶体轨道哈密顿分布(–COHP), Fermi能级位于0 eV Figure6. Crystal orbital Hamilton populations (–COHP) of Hf-C-N compounds. The Fermi level is at 0 eV.