1.Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094, China 2.Princeton Plasma Physics Laboratory, Princeton University, Princeton 08543, USA 3.School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Fund Project:Project supported by the Government Sponsored Study Abroad Program of the Chinese Scholarship Council (CSC) (Grant No. 201804910897) and the Science and Technology Innovation Leading Talent Project of the National “Ten Thousand Talents Program” (Grant No. Y8BF130272)
Received Date:29 June 2020
Accepted Date:11 July 2020
Available Online:13 November 2020
Published Online:05 November 2020
Abstract:Understanding the power deposition characteristic of high density helicon wave plasma source is critical for further investigating into the discharge mechanism of helicon wave discharge. Based on the warm plasma dielectric tensor model which contains both the particle thermal effect and temperature anisotropy and using the insulting boundary condition, the eigenmode dispersion relation of helicon wave and Trivelpiece-Gould (TG) wave propagating in radially uniform plasma column are numerically obtained. Then based on the eigenmode dispersion relation and exact field distribution in the plasma column, the mode coupling properties between the helicon wave and TG wave, the parametric dependence of the cyclotron damping properties of the electron cyclotron wave (TG wave) and power deposition properties of the m = –1, 0, +1 modes under moderate plasma density and low magnetic fields conditions are theoretically investigated in typical helicon plasma parameter range. The detailed investigations are shown below. Under typical helicon plasma parameter conditions, i.e. wave frequency ω/2π = 13.56 MHz and the ion temperature is one-tenth of the electron temperature, there exist a critical magnetic field value B0,c and a critical electron temperature value Te,c for which under the conditions of B0 < B0,c the helicon wave becomes an evanescent wave and the TG wave becomes an evanescent wave when Te < Te,c. The cyclotron damping of the TG wave dramatically increases as the wave frequency approaches to the electron cyclotron frequency. The TG wave becomes a growth wave when the ratio of perpendicular electron temperature to parallel electron temperature is above a certain value. For the high magnetic field, i.e. ω/ωce = 0.1, most of the power deposition is deposited in the central core region, while for the low magnetic field, i.e. ω/ωce = 0.9, the power is deposited mainly in the outer region of plasma column. For typical helicon plasma electron temperature range, Te ∈ (3 eV, 5 eV), the energy depositions induced by the collisional damping and Landau damping of the TG wave are dominant for different electron temperature ranges, which implies that different damping mechanisms have different heating intensities for electrons. Under current parameter condition, compared with the m = +1 mode, the m = –1 and m = 0 mode of the TG wave play major role in the power deposition process, although the cyclotron damping of the TG wave dominates the power deposition in this typical electron temperature range. All these conclusions provide some useful clues for us to better understand the high ionization mechanism of helicon wave discharge. Keywords:helicon plasma/ mode coupling/ power deposition/ dispersion relation
假定粒子温度各向同性, 在$\omega /{\omega _{{\rm{ce}}}} = 0.85$, ${\omega _{{\rm{pe}}}}/{\omega _{{\rm{ce}}}} = 10$, $p = 3\;{\rm{mTorr}}$参量条件下, 图4所示为whistler waves传播常数实部与虚部随纵向电子温度的变化. 由图4可知, 随着电子温度的逐渐增大, 回旋阻尼增大, 直至在${T_{{\rm{e}}\,z}} \!=\! {T_{{\rm{e}}\,\bot }} \!\approx 7\;{\rm{eV}}$处, 传播常数虚部出现最大值, 暗示此时回旋阻尼最为显著, 接着, 随着电子温度的进一步增大, 回旋阻尼逐渐减小. 另一方面, 电子温度各向异性亦对回旋阻尼强度存在直接影响, 在${n_0} \!=\! 1 \!\times\! {10^{13}}\;{\rm{c}}{{\rm{m}}^{{\rm{ - 3}}}}$, $\omega /{\omega _{{\rm{ce}}}} = 0.2$, ${T_{{\rm{e}}\;z}} = 3\;{\rm{eV}}$, $p = 5\;{\rm{mTorr}}$参量条件下, 图5表明: 当给定纵向电子温度时, 在${T_{{\rm{e}}\; \bot }}/{T_{{\rm{e}}\;z}} \in (0.01\;, \;100)$范围内, 随着横向电子温度的增大, 回旋阻尼逐渐减小, 并在${T_{{\rm{e}}\; \bot }}/{T_{{\rm{e}}\,z}} \approx 1.39$处消失; 随着${T_{{\rm{e}}\; \bot }}/{T_{{\rm{e}}\,z}}$的继续增大, 传播常数的虚部变为负值. 这一现象暗示: 当电子的横向纵向温度比超过某一临界值时, 电子回旋波变为增长波. 图 4 Whistler waves纵向波数的实部与虚部随纵向电子温度的变化关系 Figure4. Corresponding relation of real and imaginary parts of the axial wave number of the whistler waves with the axial electron temperature.
图 5 Whistler waves纵向波数的实部与虚部随电子温度各向异性因子的变化关系 Figure5. Corresponding relation of real and imaginary parts of the axial wave number of the whistler waves with the electron temperature anisotropy factor