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Metal–insulator transition in few-layered GaTe transistors
1.IntroductionSincethediscoveryofgraphene[1,2],two-dimensional(2D)semiconductors,includingtransitionmetaldichalcogenides(TMDCs)[1,3],blackphosphorous( ...
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Mn doping effects on the gate-tunable transport properties of Cd3As
1.IntroductionAsarepresentativematerialoftopologicalDiracsemimetal(TDS),Cd3As2hasbeenintensivelystudiedinrecentyearsthankstoitsstabilityinairanditshig ...
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Charge transport and quantum confinement in MoS2 dual-gated transistors
1.IntroductionAtomicthicktwo-dimensional(2D)layeredmaterials,suchassemi-metallicgrapheneandsemiconductivetransitionmetaldichalcogenides(TMDCs),haveeme ...
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Gate-regulated transition temperatures for electron hopping behaviours in silicon junctionless nanow
1.IntroductionDopantatomsmaydrawmoreattentionwhentheyareusedasafunctionalunitofultra-smallelectronicdevicesinsteadofjustprovidingcarriers[1-3].Forexam ...
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Non-volatile optical memory in vertical van der Waals heterostructures
1.IntroductionIntheeraofbigdataandartificialintelligence(AI),thedemandforprocessing,memoryandcommunicationdeviceswithhigherspeed,higherefficiencyandlo ...
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Graphene plasmonic nanoresonators/graphene heterostructures for efficient room-temperature infrared
1.IntroductionHigh-performancemid-infrared(mid-IR)photodetectorsarewidelyusedinsecurityandbiomedicalareas[1,2].However,thecommercializedinfrared(IR)ph ...
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Coupling between quantum dots and photonic nanostructures
Semiconductorquantumdots(QDs)areusuallyrecognizedas“artificialatoms”thathavediscretestatesduetothequantumconfinementofelectronsandholesinthreedimensio ...
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A brief review of formation energies calculation of surfaces and edges in semiconductors
1.IntroductionThefundamentalthermodynamictheoryofsurfaces,initializedbytheAmericanscientistJosiahWillardGibbs,isoneofthemostpracticaltoolsforthestudyo ...
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A review on performance comparison of advanced MOSFET structures below 45 nm technology node
1.IntroductionAconventionalMOSFETmaintainsitsperformancebeyond100nm.Severaladverseeffectsariseduetoreductioninchannellengthreductiondependingonscaling ...
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Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode
1.IntroductionInthelastfewdecades,galliumarsenide(GaAs)alloysandIII–Vsemiconductorswerethemostcommercializedmaterialsforlaserdiodes(LDs)[1,2].However, ...
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Strain-induced the dark current characteristics in InAs/GaSb type-II superlattice for mid-wave detec
1.IntroductionThereisanincreasingdemandforinfrareddetectorsinawidevarietyofapplications,suchassurveillanceequipment,medicaldevices,andmilitaryapplicat ...
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1064 nm InGaAsP multi-junction laser power converters
1.IntroductionLaserenergytransmissionasapotentialtechnologyofwirelessenergytransmissionhasattractedtheattentionofresearchersinrecentyears.Thelaserpowe ...
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A 0.1–1.5 GHz multi-octave quadruple-stacked CMOS power amplifier
1.IntroductionModernwirelesscommunicationsystemsworkingin0.1–1.5GHzhaverecentlybeendeveloped,suchasindustrialscientificandmedical(ISM),enterprisenetwo ...
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A high performance adaptive on-time controlled valley-current-mode DC–DC buck converter
1.IntroductionPortableelectronicdevicessuchasmobilephonesandlaptops,arealmostcompletelyintegratedintoeveryaspectofpeople’sdailylife,whichputshigherdem ...
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Variation tolerance for high-speed negative capacitance FinFET SRAM bit cell
1.IntroductionThestructureofNC-FinFETsisalmostthesameasFinFETs,buttheNClayerispositionedbetweenthegateandinternalgate,whosestructureisMFMIS(metal–ferr ...
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An 18-bit sigma –delta switched-capacitor modulator using 4-order single-loop CIFB architecture
1.IntroductionTheideaofsigma–delta(Σ–Δ)modulationwasfirstproposedin1962byInoiseetal.[1],whodescribedamodulatorstructurewithacontinuous-timeintegratora ...
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Mathematical analysis of organic-pass transistor using pseudo-p-OTFTs
1.IntroductionOrganicelectronicshaveattractedenormousattentionintherecentyearsbecauseoftheiradvantagesandcompatibilitywithflexibleelectronics.Anorgani ...
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Numerical study of mono-crystalline silicon solar cells with passivated emitter and rear contact con
1.IntroductionThefirstmono-crystallinesiliconsolarcellwithpassivatedemitterrearcontact(PERC)configurationwasproposedin1989[1].Comparedwiththeconventio ...
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Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp
1.IntroductionSiCMOSFETshaveachievedgreatimprovements,bothindevicedesignandmaterialfabricationtechnology[1-5].Mostleadingsemiconductorcompaniesarework ...
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Perspective on the imaging device based on perovskite materials
Largelightabsorptioncoefficients,tunablebandgaps,hightolerancetodefects,longcarrierlifetimesaswellasdiffusionlengthsrenderleadhalideperovskitematerial ...
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Preface to the Special Issue on Perovskite Semiconductor Optoelectronic Materials and Devices
Halideperovskite,anovelsemiconductormaterial,wasinitiallyusedinsolarcellssince2009,andtremendousprogresseshavebeenwitnessedinthelastdecade.Thepowercon ...
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Recent progress in developing efficient monolithic all-perovskite tandem solar cells
1.IntroductionOrganic–inorganicmetalhalideperovskiteshavebecomeattractivelightabsorbermaterialsforsolarcellsduetotheirhighopticalabsorptioncoefficient ...
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HI hydrolysis-derived intermediate as booster for CsPbI3 perovskite: from cry
1.IntroductionSincethefirstorganic–inorganichybridperovskitesolarcell(PSCs)wasproposedbyMiyasaka’sgroup[1],itspowerconversionefficiency(PCE)hassky-roc ...
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The strategies for preparing blue perovskite light-emitting diodes
1.IntroductionThemetalhalideperovskiteshaveageneralchemicalformulaofABX3:Aisamonovalentorganicorinorganiccation,e.g.,CH3NH3+(MA+),CH(NH2)2+(FA+),Cs+,R ...
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Perovskite semiconductors for direct X-ray detection and imaging
1.IntroductionX-raypossessesstrongpenetratingcapacity,sohasbeenwidelyappliedtonondestructivelyprobetheinsideinformationofcondensedmattersubjectsinvari ...
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The application of halide perovskites in memristors
1.IntroductionBecauseoftherapiddevelopmentsininformationtechnologies,massiveamountsofdataneedtobeefficientlystoredandprocessed.However,thetraditionalc ...
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Comprehensive first-principles studies on phase stability of copper-based halide perovskite derivati
1.IntroductionArtificiallightingaccountsforone-fifthofglobalelectricityconsumption,withahalfofthatamountconsumedbyinefficientincandescentandfluorescen ...
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I/P interface modification for stable and efficient perovskite solar cells
1.IntroductionOrganic–inorganichalideperovskitesolarcells(PSCs)havebeenrapiddevelopedinthepastdecadeduetotheiruniqueproperties,suchashighcarriermobili ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Mo5+ doping induced interface polarization for improving performance of plan
1.IntroductionPerovskitesolarcellsareconsideredtobepromisingphotovoltaicdevicesthankstotheirexcellentproperties,suchaslowcost[1],highefficiency[2],and ...
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Light-emitting diodes based on all-inorganic copper halide perovskite with self-trapped excitons
1.IntroductionOrganometalhalideperovskiteshaveattractedgreatattentionasemittingmaterialsofhighefficientlight-emittingdiodes(LEDs)fortheiruniqueadvanta ...
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Giant efficiency and color purity enhancement in multicolor inorganic perovskite light-emitting diod
1.IntroductionOwingtogoodthermalstabilityandexcellentelectricaltransportability,inorganichybridperovskitelight-emittingdiodes(PeLEDs)havedrawnsignific ...
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Two-dimensional transition metal dichalcogenides for lead halide perovskites-based photodetectors: b
1.IntroductionInrecentyears,leadhalideperovskiteshaveattractedenormousattentionbecauseoftheirpromisingapplicationsinhigh-performanceoptoelectronicdevi ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Recent advancements in flexible humidity sensors
Flexibleelectronicsareattractingwidespreadattentionduetotheirpotentialapplicationsinwearablehealthmonitoringandcaresystems[1],holdinggreatpromiseinthe ...
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Flexible sensors based on hybrid materials
WiththerapiddevelopmentofmobileInternetandintelligentdevices,flexibleelectronictechnologyhasattractedwideattentiondrivenbythehugedemandofthemarket.Aso ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Preface to the Special Issue on Flexible Materials and Structures for Bioengineering, Sensing, and E
Humanbodywithcurvedandsoftinterfacesrequestsadvancedflexiblematerialsandstructuresfortheinteractionwithorgansandsignalcollectionfromtargetsinapplicati ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Skin-inspired electronics: emerging semiconductor devices and systems
1.IntroductionSkinisthelargestorganfeaturingsoftmechanicalpropertiesandacomplexsensorynetworkthatinterfaceswiththeenvironment,whichservesasaninspirati ...
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Flexible inorganic oxide thin-film electronics enabled by advanced strategies
1.IntroductionInorganicoxidethinfilmshaveattractedextensiveattentionthankstotheirrichelectrical,optical,thermal,mechanical,magneticandotherproperties[ ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
A review of flexible halide perovskite solar cells towards scalable manufacturing and environmental
1.IntroductionHalideperovskiteshavequicklyshownsuccessaspromisingnewphotovoltaicmaterials.Therecordefficiencyfromsuchmaterialshasreached25.2%whichriva ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Recent progress of morphable 3D mesostructures in advanced materials
1.IntroductionThefastdevelopmentofroboticsandsemiconductorfabricationtechniquesmeansthatrobotsarenowevolvingtowardsminiaturizationtofulfillvariousemer ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Nanofiber/nanowires-based flexible and stretchable sensors
1.IntroductionFlexibleandstretchablesensorscanbeuniformlyattachedtothesurfaceofskinororgansduetoexceptionalfeaturessuchaslightweight,stretchability,lo ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Characteristics and techniques of GaN-based micro-LEDs for application in next-generation display
1.IntroductionFromplasmadisplaypanel(PDP),cathoderaytube(CRT)toliquidcrystaldisplay(LCD),andthentoorganiclight-emittingdiode(OLED)andquantumdotlight-e ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Designer substrates and devices for mechanobiology study
1.IntroductionDesignersubstratesanddeviceshavelongbeentheheartofbiomaterials,bioengineering,andapowerfultoolfordevelopmentalbiology,cellbiology,biomed ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Tubular/helical architecture construction based on rolled-up AlN nanomembranes and resonance as opti
1.IntroductionAluminum-nitride(AlN)isaninterestinggroupIII–Vsemiconductor,whichpresentsdirectbandgap(around6.2eV),highthermostability,goodpiezoelectri ...
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Growth of aligned SnS nanowire arrays for near infrared photodetectors
1.IntroductionOrthorhombictinsulfide(SnS)isanimportantmemberofanisotropiclayeredIV–VIgroupsemiconductors,whereSnatomsarecoordinatedtothreeSatomstoform ...
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Observation of exciton polariton condensation in a perovskite lattice at room temperature
QUANTUMOPTICObservationofexcitonpolaritoncondensationinaperovskitelatticeatroomtemperatureNat.Phys.,2020,doi:10.1038/s41567-019-0764-5Excitonpolariton ...
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Epitaxial graphene gas sensors on SiC substrate with high sensitivity
1.IntroductionGrapheneisattractiveforfabricatingofsolidstategassensorsduetoitsuniquephysicalandchemicalproperties.Itpossesseslargesurfaceareaperunitvo ...
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Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch
1.IntroductionCurrently,GaAspHEMTswitchesplayamoreandmoreimportantroleinRFswitchingandexhibitexcellentperformanceinmoderncommunicationsystems[1,2].Com ...
中科院半导体研究所本站小编 Free考研考试 2022-01-01
Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPA
1.IntroductionImpactavalanchetransittime(IMPATT)oscillatorsarethemostpowerfulsolidstatesourcesforgeneratingmicrowave(3–30GHz),mm-wave(30–300GHz)andter ...
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First-principles exploration of defect-pairs in GaN
1.IntroductionAsawidebandgapsemiconductor,galliumnitride(GaN)haswideapplicationsinlightemittingdiodes(LEDs),laserdiodes,photodetectorsandhighelectronm ...
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High performance GaN-based hybrid white micro-LEDs integrated with quantum-dots
1.IntroductionIII-nitridematerialsaredirectbandgapsemiconductors,thebandgapcrossesfromtheinfraredtotheultravioletspectralrange[1]stimulatingoptoelectr ...
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