1.School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China 2.Spallation Neutron Source Science Center, Dongguan 523803, China 3.Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China 4.Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Fund Project:Project supported by the National Natural Science Foundation of China (Grant Nos. 11575138, 11835006, 11690040, 11690043, 11705216) and the Science and Technology Project of Guangdong Province, China (Grant Nos. 2017B090901068, 20170921)
Received Date:05 August 2019
Accepted Date:09 September 2019
Available Online:26 November 2019
Published Online:05 December 2019
Abstract:The 65 nm-microcontroller units (MCUs) are being widely used in critical terrestrial tests, and the risk from atmospheric neutron becomes more and more serious. The spallation neutron source contains broad energy spectrum, which is different from the mono-energetic neutron sources, and is the most ideal irradiation source for atmospheric neutron single event effect (SEE). Benefiting from China Spallation Neutron Source (CSNS), the atmospheric neutron SEE in 65 nm-MCUs is tested for the first time at the CSNS 9th beam line in China. The beam line is locatedin the 46° direction along the proton hitting the target, and the neutron spectrum is achieved to range from meV to 1.6 GeV. The test is conducted in two conditions in order to investigate the influence of thermal neutron. One is that the thermal neutrons are shielded with a 2-mm-thick cadmium slat at the beam ejection hole, and the other is not. The detected effects are single bit upset (SBU) events. 16 SBU events are detected when 5.3363 × 1017 protons hit the tungsten target without the thermal neutron, and 63 SBU events are recorded in the condition of 7.2131 × 1017 protons striking the target and thermal neutrons included. Comparing with the high energy neutron (>1 MeV), the SBU events caused by thermal neutron contribute about 65% of the number of total upset events. The test results preliminarily illustrate that the thermal neutrons dominate the 65 nm MCU reliability. Keywords:65 nm/ thermal neutron/ China Spallation Neutron Source/ single event effect
通过位置调节, 使主芯片中心与孔中心处于同一水平, 如图3(a)所示. 中子从距离慢化器表面8.95 m、孔径为2 cm的孔洞中引出轰击待测芯片. 图 3 65 nm MCU散裂中子辐照测试现场图 (a) DUT与出射孔相对位置图; (b)含2 mm厚镉屏蔽体测试现场图; (c)无镉屏蔽测试现场图 Figure3. 65 nm MCU neutron test site: (a) The device under test and the 2 cm ejection hole; (b) with 2 mm cadmium shielding; (c) without cadmium shielding.