\r李祥高^{1, 2}，邓伟伟^{1, 2}，王世荣^{1, 2}，肖 殷^{1, 2}，周浓林\r^{1, 2}\r
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AuthorsHTML:\r李祥高^{1, 2}，邓伟伟^{1, 2}，王世荣^{1, 2}，肖 殷^{1, 2}，周浓林\r^{1, 2}\r
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AuthorsListE:\rLi Xianggao^{1, 2}，Deng Weiwei^{1, 2}，Wang Shirong^{1, 2}，Xiao Yin^{1, 2}，Zhou Nonglin\r^{1, 2}\r
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AuthorsHTMLE:\rLi Xianggao^{1, 2}，Deng Weiwei^{1, 2}，Wang Shirong^{1, 2}，Xiao Yin^{1, 2}，Zhou Nonglin\r^{1, 2}\r
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Unit:\r\r1. 天津大学化工学院，天津 300354；\r
\r\r2. 化学化工协同创新中心(天津)，天津 300072\r
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Unit_EngLish:\r1．School of Chemical Engineering and Technology，Tianjin University，Tianjin 300354，China；
2．Collaborative Innovation Center of Chemical Science and Engineering(Tianjin)，Tianjin 300072，China\r
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Abstract_Chinese:\r有机发光二极管(OLED)中的高性能材料和新制备工艺一直是该领域的研究热点．以磷钨杂多酸溶液为前驱体，采用旋涂法在氧化铟锡(ITO)阳极上经退火制备磷钨氧化物薄膜，通过不同的退火条件调控薄膜的功函数．以X 射线光电子能谱(XPS)、原子力显微镜(AFM)和紫外可见吸收光谱(UV-Vis)表征其组成、表面粗糙度和透光性．以此薄膜作为空穴注入层(HIL)，构建结构为[ITO/ HIL(35,nm)/ NPB(25,nm)/ C545T：Alq3(40,nm)/Alq3(15,nm)/ LiF(1,nm)/ Al(100,nm)] 的绿光OLED 器件．结果表明，采用旋涂法制备了表面平整、透光度大于92%,及功函数可调的磷钨氧化物薄膜，基于真空中退火的磷钨氧化物空穴注入层的器件表现出优异的发光性能，启亮电压为3.6,V，最大亮度为31,160,cd/m2，最大电流效率为11.54,cd/A，最大功率效率为4.45,lm/W．这一结果为研究金属氧化物空穴注入材料及其成膜方法以及获得高性能发光器件提供了新的启示．\r
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Abstract_English:\rThe research on high performance functional materials and new fabrication in organic light-emitting diode(OLED)is always a hotspot of this field．Phosphotungstic acid solution used as a precursor was spin-coated onto indium tin oxide(ITO)anode，followed by an annealing treatment，then a phosphorus-tungsten oxide film was obtained．And work function of phosphorus-tungsten oxide film was adjusted when the film was annealed in different atmosphere．Various parameters which include film composition，surface morphology and optical property were measured by X-ray photoelectron spectroscopy(XPS)，atomic force microscope(AFM)，and ultra-violet spectrometer，respectively．The phosphorus-tungsten oxide film was used as hole injection layer(HIL)，and green OLED with the structure of [ITO/ HIL(35,nm)/ NPB(25,nm)/ C545T：Alq3(40,nm)/ Alq3(15,nm)/ LiF(1,nm)/ Al(100,nm)] was fabricated．It suggests that the phosphorus-tungsten oxide film has the characters of smooth surface，optical transmittance of over 92 %, and work function adjustment．And the performance of device shows turn-on voltage of 3.6,V，maximum luminance of 31,160,cd/m2，maximum current efficiency of 11.54,cd/A and maximum power efficiency of 4.45,lm/W，respectively．The results provide a new way for exploring HIL materials particularly the transition metal oxide and their deposition process，as well as the application in high performance OLED.\r
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Keyword_Chinese:磷钨氧化物；空穴注入层；功函数调控；旋涂；有机发光二极管\r

Keywords_English:phosphorus-tungsten oxide；hole injection layer；work function adjustment；spin-coating；organic light-emitting diode\r


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