\r梁 骥，孙 晨\r
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AuthorsHTML:\r梁 骥，孙 晨\r
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AuthorsListE:\rLiang Ji，Sun Chen\r
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AuthorsHTMLE:\rLiang Ji，Sun Chen\r
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Unit:\r天津大学精密仪器测试技术及仪器国家重点实验室，天津 300072\r
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Unit_EngLish:\rState Key Laboratory of Precision Measurement Technology and Instrument，Tianjin University，Tianjin 300072，China\r
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Abstract_Chinese:\r随着消费者对电子器件要求的提高，电子器件需要在面积不变的情况下拓展与优化功能．一个典型的案例是将压电MEMS 谐振器与IC 电路集成，谐振器驱动的晶体管可以表现出独特的性能．之前研究的器件基本都是基于表面波谐振器，但器件频率低，体积大，无法利用半导体工艺将二者集成在一起．为解决上述缺点，设计制作了一种由MEMS 兰姆波谐振器驱动的石墨烯场效应管．借助声电流效应，MEMS 谐振器产生的兰姆波将石墨烯中的载流子进行了传输，设置于声波传播路径上的一对电极可以检测出电流值，且底部的栅极可以调节电流的大小．通过仿真，预测了谐振器的工作模式，在3 GHz 以内主要有A0、S0、S1 3 种工作模式．经过微加工技术得到的兰姆波谐振器电学特性与仿真吻合，且A0、S0、S1 这3 种模式都成功驱动石墨烯产生了声电流，其中，2.9 GHz(S1 模式)是已有报道中能够激发出声电流的最高频率．以S0模式激发的声电流为主要研究对象的结果表明：声电流大小与输入射频功率呈正相关性，但由于谐振器功率承载能力有限，二者表现出了非线性关系；栅极电压由于改变了石墨烯中载流子迁移率与电导率，最终成功调制了声电流的大小；兰姆波谐振器驱动石墨烯晶体管工作频率更高，体积更小，成功验证了一种新的芯片集成的方法．\r
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Abstract_English:\rWith an increase in consumer needs，resonator functions need to be optimized and extended without an increase in their sizes. A typical approach to realize this is to integrate micro-electro-mechanical system(MEMS)resonators with integrated circuits(ICs). Transistors driven by resonators exhibit outstanding performance. Previously studied devices are based on surface acoustic wave(SAW)resonators，which have a low frequency，large size，and fail to be monolithically integrated with transistors. To overcome such disadvantages，a graphene field effect transistor(FET)driven by a MEMS lamb wave resonator(LWR)is proposed in this paper. Owing to the acousto-electric(AE) effect，the acoustic waves generated by the resonator transport the carriers in graphene，which results in a current. The AE current can be detected by a pair of electrodes and tuned by gate voltage. Through the finite element method(FEM)，we predict the performance of the resonator. There exist the following three modes：A0，S0，and S1. The measured performance of the fabricated device agrees well with the results of simulation. The three modes each succeeded in exciting an AE current，and 2.9 GHz(S1 mode)was the highest frequency that could induce an AE current. Focusing on the S0 mode，the AE current increased with an increase in radio frequency power. Because of limited power handling，the current exhibited nonlinearity with respect to the input RF power. The gate voltage can tune the mobility and the conductivity in grapheme；thus，it can tune the AE current. The LWR-driven graphene FET has a higher frequency and smaller size and demonstrates a novel way for integration of microchips.\r
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Keyword_Chinese:微机电系统；兰姆波谐振器；石墨烯场效应管；声电流效应\r

Keywords_English:micro-electro-mechanical system(MEMS)；Lamb wave resonator；graphene field effect transistor；acousto-electric effect\r


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