\r谢 生¹，王雪飞¹，兰馗博¹，毛陆虹²，董威锋¹，丛 佳²，孙邵凡\r¹\r
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AuthorsHTML:\r谢 生¹，王雪飞¹，兰馗博¹，毛陆虹²，董威锋¹，丛 佳²，孙邵凡\r¹\r
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AuthorsListE:\rXie Sheng¹，Wang Xuefei¹，Lan Kuibo¹，Mao Luhong²，Dong Weifeng¹，Cong Jia²，Sun Shaofan\r¹\r
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AuthorsHTMLE:\rXie Sheng¹，Wang Xuefei¹，Lan Kuibo¹，Mao Luhong²，Dong Weifeng¹，Cong Jia²，Sun Shaofan\r¹\r
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Unit:\r1. 天津大学微电子学院天津市成像与感知微电子技术重点实验室，天津 300072；
2. 天津大学电气自动化与信息工程学院，天津 300072\r
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Unit_EngLish:\r1. Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology，School of Microelectronics，Tianjin University，Tianjin 300072，China；
2. School of Electrical and Information Engineering，Tianjin University，Tianjin 300072，China\r
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Abstract_Chinese:\r针对硅基光电探测响应度低的问题，设计了一款与标准CMOS 工艺兼容的、可用于弱光探测的高响应度的NMOS 型光电探测器(NMOS-PD)．该探测器由栅体互连的NMOS 管和T-well/N-well 结光电二极管构成，利用光电二极管的光生伏特效应改变T 阱电势，进而控制NMOS 管的栅压和阈值电压，以此实现光信号的探测与倍增放大，故所设计光电探测器具有更高的光电流增益和更宽的动态范围．经理论模拟计算和优化设计，本文设计了总面积为20 μm×20 μm 的NMOS-PD，选用整个T 阱区作为光敏区域(16 μm×16 μm)，以增加光的吸收量，所设计光电探测器经UMC 0.18 μm CMOS工艺流片制备．测试结果表明，所设计探测器在400～700 nm波长范围内具有较好的响应度．采用630 nm LED 作为光源，当输出光功率密度Popt＝5 mW/cm2、漏源偏压VDS＝0.4 V 时，NMOS-PD的响应度达到1 550 A/W，并实现了200 kHz 的信号探测．尽管随着光强增大，光电探测器响应度逐渐降低，但整体上仍超过103 A/W．与硅基CMOS 工艺制备的传统光电探测器相比，所设计光电探测器结构不仅可在低压、低功耗下正常工作，且在弱光条件下具有极高的倍增放大能力，有望应用于弱光探测的图像传感领域．\r
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Abstract_English:\rThis study aims to design a novel N-channel metal oxide semiconductor transistor-type photodetector(NMOS-PD) with high responsivity for ultra-weak light detection based on standard CMOS technology to improve the responsivity of photodetectors in optoelectronic integrated circuits. NMOS-PD comprises a gate/body-tied NMOS transistor and photodiode formed by a T-well/N-well junction. The photovoltage induced by the photodiode controls the gate and threshold voltages of the NMOS transistor，thereby improving the sensitivity of NMOS-PD. After simulation calculation and optimization，a total area of 20 μm×20 μm was adopted for the NMOS-PD. Moreover，the whole T-well region was selected as the photosensitive area(16 μm×16 μm)to increase light absorption. The designed NMOS-PD was fabricated in UMC 0.18 μm CMOS technology. Results showed that the output characteristics of NMOS-PD were as similar to that of the NMOS transistor，and the designed NMOS-PD demonstrated a good spectral response between 400 and 700 nm. When the device was biased by a drain voltage of 0.4 V and illuminated by a 630 nm LED source with an average output power density of 5 mW/cm²，a responsivity of 1 550 A/W was obtained. The device could normally operate up to 200 kHz. Although the responsivity gradually decreased as the light intensity was enhanced，it still exceeded 10³ A/W. In comparison with traditional silicon photodetectors fabricated in standard CMOS，the designed NMOS-PD could operate properly under low voltage with low power consumption and exhibited high multiplying amplification capability under weak light conditions. Therefore，the proposed NMOS-PD has potential applications in the field of ultra-weak light imaging detection.\r
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Keyword_Chinese:光电探测器；响应度；弱光探测；CMOS工艺\r

Keywords_English:photoelectric device；responsivity；weak light detection；CMOS technology\r


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