天津大学博士生导师教师师资介绍简介-孟凡易

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本站小编 Free考研考试/2020-09-13

mengfanyi@tju.edu.cn
中国电子学会优秀科技工作者，北洋****英才计划
教授
高性能高谱效太赫兹收发技术

硅基CMOS太赫兹双向放大器技术研究
一种基于不对称交叉连接的超宽带倍频器

INTEGRATED DC-DC BOOST CONVERTER WITH GALLIUM NITRIDE POWER TRANSISTOR

Multi-standard full-duplex dual-conversion type transceiver

一种工作频率趋近于fT/2的宽带放大器

一种基于亚阈值技术的变压器耦合压控振荡器

一种双工作模式的超宽带分布式下混频器

一种六位数字移相器

一种全集成单刀双掷开关电路

A Multi-standard Full-duplex Direct Conversion Transceiver

宽带数控低噪声可变增益放大器

一种Ka波段SiGe BiCMOS射频功率放大器

一种介质集成悬置线WLAN双通带低噪声放大器
本发明公开了一种基于不对称交叉连接的超宽带倍频器,所述超宽带倍频器包括：带电流源的射极跟随器、超宽带有源巴伦、倍频器核心单元；倍频器核心单元包括：两组不同射极面积的差分结构,2个差分结构发射极交叉连接；输入信号通过一个带尾电流源进入超宽带有源巴伦转化成一组差分信号,该差分信号通过一个带尾电流射极跟随器进入倍频器核心单元；解决了现有的不足,形成了带宽为42GHz超宽带倍频器；

Integrated circuits, wafer level integrated III-V power device and CMOS driver device packages, and methods for fabricating products with integrated III-V power devices and silicon-based driver devices are provided.

本发明公开了一种多标准全双工二次变频式收发机，包括发射链路、接收链路、用于提供抵消信号的射频抵消电路和为发射链路、接收链路提供本振信号的频率源；系统中使用的放大器、振荡器和混频器等电路都可以工作在两个频段下，从而使得此收发系统支持多个通信标准。

本发明公开了一种工作频率趋近于fT/2的宽带放大器，本发明采用LC串联谐振电路与共源共栅结构并联的技术方案，提升了增益单元的高频增益，同时拓展了增益单元的低频带宽，进而，在趋近于fT/2处实现了高增益、宽频带的效果；本发明的匹配电路均由片上无源器件构成，并且在设计匹配网络时，考虑到信号输入、输出Pad在F波段内的寄生效应，确保了电路的稳定性和可行性；本发明中的增益单元由带隙基准电路提供电流偏置，可以通过控制偏置电压精确调整偏置电流的大小，以达到放大器的最优性能。

本发明公开了一种基于亚阈值技术的变压器耦合压控振荡器,包括相互连接的核心振荡电路和输出缓冲级电路,所述核心振荡电路包括电感电容谐振回路和负阻产生回路,电感电容谐振回路上主线圈差分电感L1与次级线圈电感L2通过变压器结构进行磁耦合,负阻产生回路由交叉耦合结构的NMOS管M1和NMOS管M2组成,负阻产生回路中的NMOS管M1与电感电容谐振回路中主线圈电感L1和固定电容C1并接点相连。

本发明公开了一种双工作模式的超宽带分布式下混频器,从LO端口到IF端口之间依次连接有第一电抗性部件、第三电抗性部件、第五电抗性部件、低通滤波网络；从RF端口到偏置电压端口之间依次连接有第二电抗性部件、第四电抗性部件、第六电抗性部件。

本发明公开了一种六位数字移相器,包括5.625°相移电路、11.25°相移电路、22.5°相移电路、45°相移电路、90°相移电路和180°相移电路,所述5.625°相移电路、11.25°相移电路、22.5°相移电路、45°相移电路以任意顺序级联在90°相移电路、180°相移电路之间。将移相器两较高相移电路作为移相器的输出、输出,不仅可提高移相器极间匹配性,且可有效提高移相精度。

本发明公开了一种全集成单刀双掷开关电路,包括谐振电容C、发射支路和接收支路,所述发射之路上设置第一天线端口、发射端口TX和控制信号端口Ctrl,所述接收之路上设置第二天线端口、接收端口RX和控制信号端口Ctrl_NOT,第一天线端口和第二天线端口均连接天线ANT,控制信号端口Ctrl和控制信号端口Ctrl_NOT输出相反的控制信号；所述谐振电容C一端接地,另一端连接天线ANT。本发明通过上述电路,具有大功率容量、高隔离度和低损耗的优势。

本实用新型公开了一种60GHz射频收发机芯片,接收机由天线、低噪声放大器、解调器、可变增益放大器和接口电路串联；发射机由接口电路、60GHz可混频器、功率放大器和天线串联,60GHz可调本振与混频器联接,调制解调采用OOK结构。本实用新型整体电路结构简单,减少了电路面积、成本和电路功耗,解决了毫米波收发机集成难度大的问题。

本发明公开了宽带数控低噪声可变增益放大器,包括依次连接的输入匹配网络、第一级低噪声级、第一级间匹配网络、第二级增益级、第二级间匹配网络、第三级增益级、输出匹配网络、第一级衰减电路、第二级衰减电路、第三级衰减电路、第四级衰减电路；输入匹配网络为可变增益放大器的射频输入端,所述第四级衰减电路为可变增益放大器的射频输出端。

本发明公开了一种Ka波段SiGe BiCMOS射频功率放大器,包括依次连接的输入匹配网络、前级增益放大电路、级间匹配网络、后级功率放大电路和阻抗变换网络；所述前级增益放大电路、后级功率放大电路均包括SiGe BiCMOS；所述前级增益放大电路、后级功率放大电路的输入端分别连接有第一偏置电路、第二偏置电路。

本发明公开了一种介质集成悬置线WLAN双通带低噪声放大器,包括低噪声放大器,低噪声放大器的分立器件构成,分立元件之间采用传输线结构进行连接,传输线结构包括介质层、分别设置在介质层两面的传输线和接地层,所述传输线包括依次连接的第一传输线和第二传输线,所述第一传输线的线宽为5.8mm至6.2mm,线长为4.2mm至4.5mm；所述第二传输线的线宽为0.8mm至1.0mm,线长为3.2mm至3.5mm。第一传输线构成低阻抗线,可等效为一端接地的电容结构
DC-50 GHz low loss switch matrix design in high resistivity trap-rich SOI

Systematic Design of a 1-W DC-6 GHz Distributed Amplifier in 0.25-μm GaAs pHEMT Technology

A 0.1 THz SiGe LNA with Novel Feedback Networks for Bandwidth Extension

A Compact Ku-Band 6-bit Attenuator in 0.35um SiGe BiCMOS Technology

Millimeter-wave beam forming on silicon (Invited)

Generalized multiple coupled tanks for silicon based RF/mm-wave IC (Invited)

Millimeter-wave IC design techniques for beam-forming applications (invited)

A DC-50 GHz SPDT switch with maximum insertion loss of 1.9dB in a commercial 0.13-μm SOI technology

A 65nm CMOS carrier-aggregation transceiver for IEEE 802.11 WLAN applications

A 57-to-64 GHz 0.094-mm2 5-bit passive phase shifter in 65-nm CMOS

Design of quarter-wavelength resonator filters with coupling controllable paths (Invited)

A 60-GHz 26.3-dB gain 5.3-dB NF low-noise amplifier in 65-nm CMOS using Q-factor enhanced inductors

A New Band-stopFilter Design with Triple Electric Paths for Passband Extension

Design of a 5.9GHz ultra-low power sub-harmonic mixer for Internet of vehicles applications

A High Frequency Microstrip Patch Antenna Integrated with FSS Using Substrate Integrated Suspended-Line Technology

A 93.4-to-104.8 GHz 57 mW fractional-N cascaded sub-sampling PLL with true in-phase injection-coupled QVCO in 65 nm CMOS

A low loss self-packaged quasi-lumped-element high pass filter using SISL technology

A review of recent power amplifier IC

A Ku-Band LNA in 0.35-μm SiGe BiCMOS technology

Silicon based MM wave IC design for 60 GHz and beyond

A D-band SiGe Differential Amplifier with 20 dB Power Gain and 30 GHz Bandwidth

A 0.1-6 GHz Digital Controlled Variable Gain Low Noise MMIC Amplifier

A 50-62 GHz Compact Subharmonic Passive Mixer MMIC with Low Conversion Loss

A High-Isolation Ku-Band SPDT Switch in 0.35μm SiGe BiCMOS Technology

A Ku-Band 6-Bit Phase Shifter in 0.35-μm SiGe BiCMOS Technology

A Compact 0.8 dB Low Noise and Self-packaged LNA using SISL Technology for 5 GHz WLAN Application

Wide center-tape balun for 60 GHz silicon RF ICs (Invited)

A compact 60 GHz LTCC microstrip bandpass filter with controllable transmission zeros (Invited)

Dual-band bandpass filter design with novel double-layer mixed coupled SIR/CPW-SIR resonators

A 100-GHz 0.21-K NETD 0.9-mW/pixel charge-accumulation super-regenerative receiver in 65-nm CMOS

A 130-to-180GHz 0.0035mm2 SPDT switch with 3.3dB-loss and 23.7dB-isolation in 65nm bulk CMOS

A W-Band Switch-Less Dicke Receiver for Millimeter-Wave Imaging in 65 nm CMOS

A 0.7/1.1-dB Ultra-Low Noise Dual-Band LNA Based on SISL Platform

DC 30-GHz DPDT Switch Matrix Design in High Resistivity Trap-Rich SOI

Quasi-Lumped-Element Filter Based on Substrate-Integrated Suspended Line Technology

A Seven-Octave Broadband LNA MMIC Using Bandwidth Extension Techniques and Improved Active Load

Novel Q-factor enhancement technique for on-chip spiral inductors and its application to CMOS low-noise amplifier designs

Novel defected ground structure and two-side loading scheme for miniaturized dual-band SIW bandpass filter designs

DGS embedded transformed radial stub for ultra-wide stopband lowpass filter

Design of a 60-GHz quasi-Yagi antenna with novel ladder-like directors for gain and bandwidth enhancements

A V-Band CMOS divide-by-three ILFD with frequency-dependent injection enhancement

A compact 57-67 GHz bidirectional LNAPA in 65-nm CMOS technology

Pole-converging intrastage bandwidth extension technique for wideband amplifiers

Ultra-wideband low-loss switch design in high-resistivity trap-rich SOI with enhanced channel mobility

An 88.5-110 GHz CMOS low-noise-amplifier for millimeter-wave imaging applications

A compact coupling controllable elliptical filter based on multilayer LTCC

Design and analysis of a K-band wideband voltage-controlled oscillator with robust start-up and frequency boost

A low-power low-phase-noise VCO with self-adjusted active resistor

State of the art in passive bandpass filter solutions for 60 GHz communications (invited)

A monopole antenna based on SISL with dual bands for WLAN operations

A Self-Packaged Low-Loss and Compact SISL DBBPF With Multiple TZs

Analysis and Design of a 0.1-23 GHz LNA MMIC Using Frequency-Dependent Feedback

Heterogeneous Integration of GaN and BCD Technologies and Its Applications to High Conversion-ratio DC-DC Boost Converter IC

A 220-285 GHz SPDT switch in 65-nm CMOS using switchable resonator concept

Monolithic Sub-Terahertz SPDT Switches With Low Insertion Loss and Enhanced Isolation

Miniaturized 3-bit phase shifter for 60 GHz phased-array in 65 nm CMOS technology