西安电子科技大学微电子学院导师教师师资介绍简介-冯倩

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基本信息
冯倩　教授
博导
硕士学科：微电子与固体电子学
工作单位：微电子学院

联系方式
通信地址：太白南路2号
电子邮箱：qfeng@mail.xidian.edu.cn
办公电话：**-816
办公地点：东大楼209A

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个人简介
冯倩，女，汉族，西安电子科技大学微电子学院教授，博士生导师。2000师从中科院郝跃院士开展“宽禁带半导体氮化镓材料与器件的研究”，2004年博士毕业后留在西安电子科技大学宽禁带半导体材料与器件教育部重点实验室工作，长期从事宽禁带/超宽禁带半导体材料与器件的研究，先后承担和参与了国家自然科学基金面上项目、自然基金重点项目、国家科技重大专项、国家重点研发计划、*科研项目*、*科研项目*、陕西省电子发展基金等多项国家级部委级项目，在这些项目中主要承担以氮化镓为代表的III-N材料表征分析与光电/电子器件的研制与性能测试。自2014年起开展超宽禁带半导体氧化镓材料的理论仿真研究，外延生长以及日盲紫外探测器、高压开关肖特基二极管和MOSFET器件的研究，所研制的场板结构肖特基二极管性能达到国际最高水平，MOSFET器件的性能也达到同期国际水平。在IEEE Electron. Device Letter, IEEE Trans. Electron Devices、IEEE Photonics Journal, Applied Physics Letters等国际著名期刊及会议上发表论文50余篇，申请/授权专利40余项，获省部级奖励三项（2006年陕西省科技进步一等奖、2006年国防科技进步二等奖和2008年教育部科学技术进步奖二等奖），国家级奖励一项（2009年国防技术发明奖二等奖）。现为IEEE Electron Device Letter, IEEE Transactions on Electron Device, Applied Physics Letter, Applied Surface Science，Journal of Alloys and Materials,Optical Material Express, IEEE Photonics Journal, 物理学报等国内外期刊审稿人。
教育经历：
1993/07-1997/07，西安电子科技大学，光电子技术，学士
1997/09-2000/03，西安电子科技大学，物理电子学与光电子学，硕士
2000/03-2004/03，西安电子科技大学，微电子学与固体电子学，博士
工作经历：
2000/04-2002/07，西安电子科技大学，技术物理学院，助教
2002/04-2004/07，西安电子科技大学，技术物理学院，讲师
2004/07-2006/07，西安电子科技大学，微电子学院，讲师
2006/07-2014/07，西安电子科技大学，微电子学院，副教授
2014/07-至今，西安电子科技大学，微电子学院，教授

主要研究方向
1、宽禁带/超宽禁带材料的外延生长与表征
2、宽禁带/超宽禁带光电器件与电子器件的设计与制备

科学研究
目前研究团队承担的科研项目：国家自然科学基金、2018年度国家重点研发计划

学术论文
代表论文：
2020年
(1)Beveled fluoride plasma treatment for vertical beta-Ga2O3 Schottky barrier diode with high reverse blocking voltage and low turn-on voltage,Zhuangzhuang Hu，Yuanjie Lv,Chunyong Zhao,Qian Feng*,Zhaoqing Feng,Kui Dang,Xusheng Tian,Yachao Zhang, Jing Ning, Hong Zhou, Jincheng Zhang,Yue Hao,IEEE Electron device letters,Vol.41,No.1,2020
(2）Normally-off beta-Ga2O3 power MOSFET with ferroelectric charge storage gate stack structure,Zhaoqing Feng,Xusheng Tian,Zhe Li,Zhuangzhuang Hu,Yanni Zhang,Xuanwu Kang, Jing Ning,Yachao Zhang,Chunfu Zhang,Qian Feng*Hong Zhou,Jincheng Zhang,Yue Hao,IEEE Electron device letters,Vol.41,No.1,2020
(3）Design and fabrication of field-plated normally off beta-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application,Zhaoqing Feng,Yuncong Cai, Zhe Li,Zhuangzhuang Hu,Yanni Zhang,Xing Lu,Xuanwu Kang,Jing Ning,Chunfu Zhang,Qian Feng*,Jinchang Zhang,Hong Zhou and Yue Hao,Applied Physics Letters,Vol.116,No.24,pp.243503,2020
(3)The investigation of beta-Ga2O3 Schottky diode with floating field ring termination and the interface states,Zhuangzhuang Hu,Chunyong Zhao,Qian Feng*,Zhaoqing Feng,Zhitai Jia,Xiaozheng Lian,Zhanping Lai, Chunfu Zhang, Hong Zhou,Jincheng Zhang, Yue Hao,Ecs Journal of Solid State Science and Technology,vol.9,no.2,2020
(4)Foward current conduction mechanism of mechanically exfoliated beta-Ga2O3-GaN pn heterojunction diode(已录用），Ecs Journal of Solid State Science and Technology,vol.9,no.3,2020
2019年
(1)High Performance vertical beta-Ga2O3 Schottky barrier diode with implanted edge termination,Hong Zhou,Qinglong Yan,Jincheng Zhang, Yuanjie Lv,Yanni Zhang,Kui Dang,Pengfei Dong,Zhaoqing Feng,Qian Feng,Jing Ning, Chunfu Zhang,Peijun Ma,Yue Hao,IEEE Electron device letters,Vol.40,No.11,2019
(2)High voltage beta-Ga2O3 Schottky diode with Argon-implantated edge termination,Yangyang Gao,Ang Li,Qian Feng*,Zhuangzhuang Hu,Zhaoqing Feng,Ke Zhang,Chunfu Zhang,Hong Zhou,Wenxiang Mu,Zhitai Jia,Jincheng Zhang, Yue Hao,Nanoscale Research Letters,vol.14,8,2019
(3)A 800V beta-Ga2O3 Metal-oxide-semiconductor field-effect trransistor with high-power figure of merit of over 86.3MWcm^-2,Zhaoqing Feng, Yuncong Cai, Guangshuo Yan, Zhuangzhuang Hu,Kui Dang,Yanning.Zhang,Zhijun Lu,Hongjuan Cheng, Xiaozheng Lian,Yongkuan Xu,Chunfu Zhang,Qian Feng*,Hong Zhou,Jincheng Zhang, Yue Hao,Physica Status Solidi a,vol.219,no.20, 2019
(4)Experimental and theoretical studies of Mo/Au Schottky contact on mechanically exfoliatedß-Ga2O3 thin films,Zhuangzhuang Hu,Qian Feng*,Zhaoqing Feng,Yuncong Cai,Yixian Shen, Guangshuo Yan, Xiaoli Lu,Chunfu Zhang,Hong Zhou,Jincheng Zhang, Yue Hao, Nanoscale Research Letters,vol.14,2,2019
2018年:
(1) Temperarture dependent electrical properties of pulse laser deposited Au/Ni/beta-(AlGa)2O3 Schottky diode，Qian Feng*, Zhaoqing Feng, Zhuangzhuang Hu, Xiangyu Xing, Guangshuo Yan, Jincheng Zhang, Yongkuan Xu, Xiaozheng Lian, and Yue Hao，APPLIED PHYSICS LETTERS，Vol,112, No.7, pp.072103,2018
(2)Field-Plated Lateralß-Ga2O3 Schottky barrier diode with high reverse blocking voltage of more than 3kV and high DC power Figure-of-Merit of 500MV/cm2,Zhuangzhuang Hu,Hong Zhou, Qian Feng, Jincheng Zhang,Chunfu Zhang, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Xuanwu Kang and Yue Hao,IEEE Electron device letters,Vol.39,No.10, pp.1564,2018
(3)Band alignment of SiO2/(AlxGa1-x)2O3 (0 <= x <= 0.49) determined by X-ray photoelectron spectroscopy,Zhaoqing Feng, Qian Feng*, Jincheng Zhang*, Xiang Li, Fuguo Li, Lu Huang, Hong-Yan Chen, Hong-Liang Lu, Yue Hao,APPLIED SURFACE SCIENCE,Vol,434, No.7, pp:440-444.2018
(4)Band alignments of SiO2 and HfO2 dielectrics with (AlxGa1-x)(2)O-3 film (0 <= x <= 0.53) grown on Ga2O3 buffer layer on sapphire,Zhaoqing Feng, Qian Feng*, Jincheng Zhang*, Chunfu Zhang, Hong Zhou, Xiang Li, Lu Huang, Lei Xu, Yuan Hu, Shengjie Zhao, Yue Hao,JOURNAL OF ALLOYS AND COMPOUNDS,Vol,745, No.7, pp:292-298,2018
(5)Tin-assisted growth of ε-Ga2O3 film and the fabrication of photodetectors on sapphire,Yuncong Cai, Ke Zhang, Qian Feng*, Yan Zuo, Zhuangzhuang Hu, Zhaoqing Feng, Hong Zhou, Xiaoli Lu, Chunfu Zhang, Weihua Tang, Jincheng,OPTICAL MATERIALS EXPRESS,Vol.8，No.11,pp.3506,2018
(6)Influence of annealing atmosphere on the performance of a β-Ga2O3 thin film and photodetector,Zhaoqing Feng, Lu Huang, Qian Feng*, Xiang Li, Hui Zhang, Weihua Tang, Jincheng Zhang, and Yue Hao,OPTICAL MATERIALS EXPRESS,Vol.8，No.8,pp.2229,2018
(7)Research on the growth of beta-(AlGa)(2)O-3 film and the analysis of electrical characteristics of Ni/Au Schottky contact using Tung's model,Qian Feng*, Zhuangzhuang Hu, Zhaoqing Feng, Xiangyu Xing, Yan Zuo, Guangshuo Yan, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Jincheng Zhang,SUPERLATTICES AND MICROSTRUCTURES,Vol.120，pp.441-447,2018
(8)Investigation of temperature dependent electrical characteristics on Au/Ni/beta-Ga2O3 Schottky diodes,Ang Li, Qian Feng* , Jincheng Zhang, Zhuangzhuang Hu, Zhaoqing Feng, Ke Zhang, Chunfu Zhang, Hong Zhou, Yue hao,SUPERLATTICES AND MICROSTRUCTURES,Vol.119,pp.212-217,2018
(9)Optical properties of (AlxGa1-x)(2)O3 on sapphire,Zhuangzhuang Hu, Qian Feng* , Jincheng Zhang*, Fuguo Li, Xiang Li, Zhaoqing Feng, Chunfu Zhang, Yue Hao,SUPERLATTICES AND MICROSTRUCTURES,Vol.114，pp.82-88,2018
(10)(InxGa1−x)2O3 Photodetectors Fabricated on Sapphire at Different Temperatures by PLD,Ke Zhang , Qian Feng *, Lu Huang, Zhuangzhuang Hu, Zhaoqing Feng, Ang Li, Hong Zhou , Xiaoli Lu , Chunfu Zhang , Jincheng Zhang , and Yue Hao,IEEE Photonics Journal,Vol.10，No.3,pp.**,2018
(11)Lateral beta-Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV,Zhuangzhuang Hu, Hong Zhou, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Qian Feng*， Jincheng Zhang*, Yue Hao,Vol.6，pp.815-820,2018
2018年以前：
(13)(AlGa)2O3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity,Qian Feng, Xiang Li, Genquan Han, Lu Huang, Fuguo Li,Weihua Tang, Jincheng Zhang and Yue hao,OPTICAL MATERIALS EXPRESS,Vol,7, No.4, pp:1240-1248,2017
(14)Comparison study of b-Ga2O3 photodetectors grown on sapphire at different oxygen pressures,Lu Huang Qian Feng Genquan Han Fuguo Li Xiang Li Liwei Fang,IEEE Photonics Jorunal,vol.9,no.4, pp:**，2017
(15)Comparison study of b-Ga₂O₃ photodetectors on bulk substrate and sapphire,Qian Feng,Lu Huang Genquan Han Fuguo Li Xiang Li Liwei Fang,Xiangyu Xing,Jincheng Zhang,Wenxiang Mu, Zhitai Jia,Daoyou Guo,Weihua Tang,Xutang Tao and Yue Hao,IEEE Transactions on Electron Device,vol.63,no.9,pp.3578,2016
(16)The properties of gallium oxide thin film grown by pulsed laser deposition,Feng Qian,Li Fuguo,Dai Bo,Jia Zhitai,Xie Wenlin,Xu Tong,Lu Xiaoli,Tao Xutang,Zhang Jincheng,Hao Yue,Applied Surface Science,Vol.359, pp:847,2015
授权专利：
(1)基于GaN纳米柱结构的染料敏化太阳能电池的制作方法,ZL8.1
(2)氮面氮化镓绒面太阳能电池及其制作方法,ZL4.5
(3)无机与有机混合太阳能电池 ,ZL9.3
(4)GaN纳米柱反转结构的混合太阳能电池的制作方法 ,ZL9.X
(5)基于超结的AlGaN/GaN MISHEMT高压器件及其制作方法,ZL6.7
(6)一种基于极化效应的复合场板高性能AlGaN/GaN HEMT器件结构及制作方法 ,ZL2.7
(7)一种基于偶极子层浮栅结构的增强型AlGaN/GaN MISHEMT器件结构及其制作方法 ,ZL3.x
(8)耗尽型绝缘栅AlGaN/GaN器件结构及其制作方法 ,ZL6.1
(9)基于增强型AlGaN/GaN HEMT 器件结构及其制作方法,ZL4.5

荣誉获奖
(1)2009年国家技术发明二等奖
(2)2008年高等学校科技进步二等奖
(3)2006年国防科技进步二等奖
(4)2006年陕西省科学技术一等奖

科研团队
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博士研究生
硕士研究生

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(2)集成电路专业英语

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微电子学与固体电子学博士
微电子学与固体电子学硕士
集成电路工程硕士
软件工程（集成电路方向）硕士

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