西安电子科技大学微电子学院导师教师师资介绍简介-刘琛

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基本信息
刘琛博士，讲师, 硕士导师
博士学科：微电子学与固体电子学
硕士学科：微电子学与固体电子学　
工作单位：微电子学院

联系方式
通信地址：西安电子科技大学397信箱
电子邮箱：liuchen@xidian.edu.cn
办公电话：
办公地点：西安电子科技大学东大楼510B

个人简介
刘琛，工学博士，微电子学院讲师，硕士导师。分别于2010年、2013年和2016年获得西安电子科技大学集成电路设计与集成系统工学学士学位、微电子学与固体电子学硕士学位和博士学位。2015年赴美国威斯康星大学-麦迪逊分校纳米工程器件研究中心访问交流一年半，合作导师是美国APS,IEEE,NAI以及AAAS 院士 Prof. Zhenqiang (Jack) Ma。主要从事柔性及可降解新型器件，基于异质材料的超高速III-V MOSFET器件研究。自2017年以来，先后主持了国家自然科学基金项目、*科研项目*以及陕西省博士后基金。近年来，以第一作者在Appl. Phys. Lett., Appl. Surf. Sci., J. Appl. Phys. 等国内外重要期刊发表学术论文15篇，在IEEE IFETC国际柔性电子会议上发表论文2篇，其中一篇是oral，在Nature期刊主办的柔性电子峰会上发表论文1篇，申请国家发明专利4项，现为Appl. Phys. A等国内外刊物审稿人。
2006.9-2010.7 西安电子科技大学，集成电路设计与集成系统，学士；
2010.9-2013.3 西安电子科技大学，微电子学与固体电子学，硕士，导师：张玉明；
2013.3-2016.6 西安电子科技大学，微电子学与固体电子学，博士，导师：张玉明；
2014.9-2015.12 在国家公派联合培养项目支持下赴美国威斯康星大学-麦迪逊分校访问交流，在IEEE Fellow Zhenqiang (Jack) Ma的指导下从事柔性InGaAs基MOSFET器件研究；
2016.7-2018.11 西安电子科技大学，物理学博士后流动站，师资博士后（讲师）；
2018.11-至今西安电子科技大学微电子学院，微电子学与固体电子学，讲师，硕士导师。

主要研究方向
1．植入式器件功能及封装材料研究
2. 可穿戴硅薄膜晶体管研究
3．超薄氧化物材料界面钝化研究
4．基于异质衬底的超高速III-V MOSFET器件研究

科学研究
目前研究团队承担的科研项目：
国家自然科学基金青年基金1项
*科研项目*1项
陕西省博士后基金1项

学术论文
代表性期刊论文
1.C Liu^*, Z Wang, H Lu, Y Zhang, D Liu, YM Zhang, Z Ma, J Zhao, L Guo, Atomic-layer-deposited HfO₂/Al₂O₃laminated dielectrics for bendable Si nanomembrane based MOS capacitors.Applied Physics Letters114 (14), 142903, 2019.
2.C Liu^*, H Lü^*, T Yang, Y Zhang, Y Zhang, D Liu, Z Ma, W Yu, L Guo,Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate.Applied Surface Science 444, 474-479, 2018.
3.C Liu^*, S June Cho, Y Hwan Jung, TH Chang, JH Seo, S Mikael, Y Zhang, et. al.Bendable MOS capacitors formed with printed In_0.2Ga_0.8As/GaAs/In_0.2Ga_0.8As trilayer nanomembrane on plastic substrates.Applied Physics Letters 110 (13), 133505, 2017.
4.C Liu^*, Z Wang, Y Zhang, H Lu, J Zhao, Y Zhang, L Guo，Capacitance-Voltage Investigation of HfO₂/Al₂O₃Bilayered High-k Dielectrics on Si Nanomembrane.2018 International Flexible Electronics Technology Conference (IFETC), 1-2.
5.C Liu, YM Zhang, YM Zhang, HL Lv,Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO₂/p-GaAs metal-oxide-semiconductor capacitors. Journal of Applied Physics 116 (22), 222207, 2014.
6.L Chen, Z Yuming, Z Yimen, L Hongliang, L Bin,Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal–oxide–semiconductor capacitors.Journal of Semiconductors 36 (12), 124003, 2015.
7.L Chen^*, Z Yu-Ming, Z Yi-Men, L Hong-Liang,Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor.Chinese Physics B 22 (7), 076701, 2013. (被引用超过20次)
8.L Chen, YM Zhang, HL Lu, YM Zhang，The Effect of Gate Dielectric Al₂O₃/ZnO on Interface Quality with N-GaAs，2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology （ICSICT) (获得最佳学生论文).

荣誉获奖
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科研团队
团队教师

博士研究生
硕士研究生

课程教学
目前本人承担的教学任务：
担任本科生课程《化合物半导体材料与器件》的主讲教师，32学时，授课班级：**,**，**班级。

招生要求
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关于研究生招生的信息：
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Profile
Name Title
Department: School of Microelectronics

Contact Information
Address: South Taibai Road No. 2, Xi\\\'an, Shaanxi, 710071
Email: liuchen@xidian.edu.cn
Tel:

Introduction
Put brief introduction of yourself here
I am Chen Liu, PhD, graduate student supervisor. I have obtained the bachelor degree in integrated circuit design and integrated system in 2010, master and doctoral degree in microelectronics and solid-state electronics in 2013 and 2016, respectively. I have been to University of Wisconsin-Madison from 2014-2015 as a visiting scholar and collaborated with the Fellow of APS, IEEE, NAI, and AAAS, Prof. Zhenqiang (Jack) Ma. My major research direction has been focused on flexible, stretchable, and wearable electronics, implantable bioelectronics. I have presided the research projects including NSFC, National Defense Pre-research Program, Post-doctoral Program of Shaanxi Province, et al. My personal funding has exceeded 2.8 M. I have published more than 15 peer-reviewed journal papers including Appl. Phys. Lett., Appl. Surf. Sci., J. Appl. Phys., and Thin Solid Films, et al. I have been invited as an honorable speaker in many international conferences including IEEE IFETC and Nature Conference. I have applied 1 international patent and 4 national patents. I am also recommended as a referee for international journals including Appl. Phys. Lett. and Thin Solid Films. My E-mail address: liuchen@xidian.edu.cn.

Research Interests
1．Flexible, Stretchable, and wearable electronics
2.Implantable Bioelectronics
3．High speed and low power electronics

Research
Research Projects （Host）
The national natural science foundation of China (NSFC)
National Defense Pre-research Program
Post-doctoral Program of Shaanxi Province

Papers
Representative Publications
[1]C Liu^*, Z Wang, H Lu, Y Zhang, D Liu, YM Zhang, Z Ma, J Zhao, L Guo, Atomic-layer-deposited HfO₂/Al₂O₃laminated dielectrics for bendable Si nanomembrane based MOS capacitors.Applied Physics Letters114 (14), 142903, 2019.
[2]C Liu^*, H Lü^*, T Yang, Y Zhang, Y Zhang, D Liu, Z Ma, W Yu, L Guo,Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate.Applied Surface Science 444, 474-479, 2018.
[3]C Liu^*, S June Cho, Y Hwan Jung, TH Chang, JH Seo, S Mikael, Y Zhang, et. al.Bendable MOS capacitors formed with printed In_0.2Ga_0.8As/GaAs/In_0.2Ga_0.8As trilayer nanomembrane on plastic substrates.Applied Physics Letters 110 (13), 133505, 2017.
[4]C. Liu, H. Lu, Y. Zhang, Y. Zhang, and Z. Wang, Modulating the band alignment and current conduction mechanism of ZrO₂/In_0.2Ga_0.8As gate stack by atomic-layer-deposited ZnO passivation layer. Thin Solid Films 714, 138385, 2020.
[5]C. Liu, Y. Zhang. Z. Wang, J. Zhao, H. Lv, and Y. Zhang, Ion penetration model of SiO₂/SiN_x/SiO₂ barrier trilayer for implantable electronics. 2019 International Flexible Electronics Technology Conference (IFETC), oral presentation.
[6]C Liu^*, Z Wang, Y Zhang, H Lu, J Zhao, Y Zhang, L Guo，Capacitance-Voltage Investigation of HfO₂/Al₂O₃Bilayered High-k Dielectrics on Si Nanomembrane.2018 International Flexible Electronics Technology Conference (IFETC), 1-2.
[7]C Liu, YM Zhang, YM Zhang, HL Lv,Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO₂/p-GaAs metal-oxide-semiconductor capacitors. Journal of Applied Physics 116 (22), 222207, 2014.
[8]L Chen^*, Z Yu-Ming, Z Yi-Men, L Hong-Liang,Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor.Chinese Physics B 22 (7), 076701, 2013. (Citation: 27)
[9]L Chen, Z Yuming, Z Yimen, L Hongliang, L Bin,Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal–oxide–semiconductor capacitors.Journal of Semiconductors 36 (12), 124003, 2015
[10]L Chen, YM Zhang, HL Lu, YM Zhang，The Effect of Gate Dielectric Al₂O₃/ZnO on Interface Quality with N-GaAs，2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology （ICSICT) (Best paper).

Honors
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Team
团队教师

博士研究生
硕士研究生

Teaching
The teaching task that I undertake at present:
Compound Semiconductor Materials and Devices

Admission
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关于研究生招生的信息：
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Our research is highly multidisciplinary. We will enroll1-2 graduate students per year. We have worked closely with some principal investigators in America, Canada, and Korea. We have also worked with some professors in Fudan university and Beihang University. Students who have high motivation, hardworking and team working spirit are recommended to well-known universities in the world after graduation!