西安电子科技大学微电子学院导师教师师资介绍简介-吕红亮

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基本信息
吕红亮　教授，博导
博士学科：微电子与固体电子学
硕士学科：微电子与固体电子学
工作单位：微电子学院

联系方式
通信地址：西安电子科技大学397信箱
电子邮箱：hllv@mail.xidian.edu.cn
办公电话：
办公地点：西安电子科技大学老科技楼A705

个人简介
女，教授，博士生导师，IEEE Member，中国电子学会高级会员。
2000年毕业于西安电子科技大学微电子技术专业，获学士学位。
2003年获工学硕士学位，2001年攻读微电子与固体电子学博士学位，2004年获得西安电子科技大学优秀博士学位论文基金资助。2003年转为在职博士任助教，2004年评为讲师， 2005年破格晋升为副教授，2010年晋升为教授。2010年赴比利时学习数模混合集成电路设计方法学。
自2000年起，主要从事宽禁带半导体材料与器件、新型VLSI半导体器件模拟与仿真、射频集成电路设计等方面的研究。先后主持国家自然科学基金项目、陕西省自然科学基金项目、应用材料创新基金、宽禁带半导体实验室基金等多项课题，同时作为主要成员承担*科研项目*、*科研项目*、*科研项目*。2001年后，在国内外著名期刊及国际会议上发表学术论文近四十篇，其中第一作者二十余篇，SCI、EI、ISTP检索二十余篇次，尤其是在IEEE Trans. On Electron Device、Applied Physics A、Diomand and Related Material、Chinese Physics、电子学报、半导体学报等刊物发表的论文，已达到国际先进水平。

主要研究方向
1、超高速半导体集成电路; 2、宽带隙半导体器件与电路; 3、 VLSI半导体器件模拟与仿真

科学研究
目前研究团队承担的科研项目：
(1) 新型碳化硅MESFET特性研究，国家自然科学基金项目，项目负责人
(2) 大规模集成电路P/G网的设计验证，陕西省自然科学基金，项目负责人
(3) 新型碳化硅整流器的研究，应用材料创新基金，项目负责人
(4) 碳化硅功率器件关键技术的研究，教育部宽禁带国家重点实验室基金，项目负责人 (5) 超高速、大功率化合物半导体器件与集成技术基础研究，973*科研项目*。　
(6) 另作为主要成员参与多项*科研项目*

学术论文
2001年后，在IEEE Trans. On Electron Device、Applied Physics A、Diomand and Related Material、Chinese Physics及国际会议上发表学术论文近五十篇，其中第一作者三十余篇，SCI、EI、ISTP检索二十余篇次。出版专业著作和教材各一本。
论文代表作：
[1] Hongliang Lv,Yimen Zhang,Yuming Zhang, Lin-an Yang, “Analytic model of I-V Characteristics of 4H-SiC MESFETs based on multiparameter mobility model”, IEEE Transactions on Electron Devices, Vol.51, No.7, 2004. pp.1065-1068 （EI No.: ，SCI No.: 004）
[2] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Physical based model for trapping and self-heating effects in 4H-SiC MESFETs”, Applied Physics A: Materials Science and Processing, Vol. 91, n 2, May, 2008, pp. 287～290. (EI: , SCI: 015)
[3] Hongliang Lv, Yimen Zhang, Yuming Zhang, “ A comprehensive model of frequency dispersion in 4H-SiC MESFET”, Solid-State Electronics, 2009, Vol. 53, No.3, pp285-291, (SCI: 07，EI: 754)
[4] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs”, Chinese Physics，2008, Vol. 17, No.4, pp1410-1414.(SCI：043，EI：)
[5] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Drain avalanche breakdown and gate instabilities in 4H-SiC MESFET’s”, Diamond and related materials, Vol. 13, No.9, pp. 1587-1591. 2004年9月（EI Number:EIP, SCI No.:001）

荣誉获奖
2000年获得“陕西省大学生优秀学生干部荣誉称号”
2002年获得西安电子科技大学研究生“学术十杰”称号
2003年获得西安电子科技大学毕业研究生特等奖
2004年获得西安电子科技大学“优秀博士论文基金”奖励
2007年获得西安电子科技大学“先进工作者”称号
2008年获得微电子学院青年教师课件比赛优胜奖
2010年获得微电子学院青年教师讲课竞赛优胜奖

科研团队
教研室学术气氛浓郁，师生之间亲密无间。非常荣幸能成为这样一支团队中的一员。

课程教学
部分教学课程：
《现代半导体器件物理》研究生学位课程
《双极型半导体器件物理》本科必修课程(双语教学)
《微电子专业英语》本科必修课程
《化合物半导体器件物理》本科选修课程

招生要求
~~~~~~~~~~~~~~~~~~~~~~~~~~
关于研究生招生的信息：
~~~~~~~~~~~~~~~~~~~~~~~~~~
招生专业：微电子与固体电子学，电力电子与电力传动
预计每年研究生8名以内（其中包括本校保送生4名以内，外校保送生名额不限）。要求报考的学生数学基础扎实，外语能力良好，踏实肯干。在国家级竞赛中获奖或在有意读博的学生优先考虑。
对做出成绩的学生，有良好奖励措施，对有高水平国际会议论文发表的学生，鼓励出国开会。课题组与欧洲微电子中心、比利时鲁汶大学、澳大利亚Grifith大学、香港城市大学、中国科学院等多家研究机构有密切合作，可对的优秀学生进行推荐。
最好能在报名前与老师取得联系，简单介绍自身情况，包括本科就读院校、专业、成绩，以及个人特长与读研动机等。

合作交流
在IEEE青年联合会上与IEEE主席合影
与IEEE欧洲分会测试部主席多米尼克教授合影
赴比利时鲁汶大学学术交流与Deham教授合影
与EPIGRESS公司合作研制外延设备（图为与工程师Jonas合影）

Profile
Prof.Hongliang Lu
School of Microelectronics, Xidian University
Advisor of doctoral students in Solid - State Electronics and Microelectronics

Contacts
Office Tel: +86-
E-Mail: hllv@mail.xidian.edu.cn
Fax: +86-
Mailing Address: School of Microelectronics , Xidian University, Box 397, Xi’an,
Shaanxi Province, P.R.China
Postcode: 710071
Affiliation: School of Microelectronics, Xidian University, P.R.China

Resume
Lu Hongliang, was born in Jan.1978, in Xi'an, Shaanxi Province, China. She attended Xidian University, China, in 1996, where she received B.S. degree in Microelectronics technology in 2000. She specialized in Solid-state electronics and Microelectronics, received the M.S. and Ph.D. degree from Xidian University, China, in 2003 and 2007. Since 2003, she has been with Xidian University where she is currently Professor of School of Microelectronics. She also serves as director of Ph.D. student. During 2010.5-2010.9, she was a visiting scholar at Interuniversity Microelectronics, Belgium. Moreover, Professor Lu has been member of many organizations home and abroad, including:

· Member of IEEE Electron Devices Society
· Fellow of Chinese Institute of Electronics
· Member of Chinese Nuclear Physics Association
· Reviewer for journals including Chinese Physics, Chinese Journal of Semiconductors and Chinese Physics Letters

Areas of Reach
For many years, she has devoted himself to educational and research works in semiconductor devices and circuits. Her research interests include:
· Wide-band-gap semiconductors and circuits
· High speed compound semiconductor devices and integrated circuits design
· Radiation effects on semiconductor devices and circuits
· Modeling and simulation of semiconductor devices

Research Projects

National Science Foundation of China:
· Study on SiC MESFETs
· Study on SiC me[ant]tal-semiconductor bipolar transistors
· Study on SiC JBS diode
· Study on Wide-band-gap semiconductor heterojunction devices
Projects of Chinese Ministries and Commissions:
· Study on high frequency and high power compound semiconductor devices and integrated circuits (the national major basic research “973” program)

Papers
In recent years, professor Lu has published more than 50 papers in the international conference and journals and many papers have been cited and indexed by EI, SCI and ISTP. Some of the papers are listed below:
[1] Hongliang Lv,Yimen Zhang,Yuming Zhang, Lin-an Yang, “Analytic model of I-V Characteristics of 4H-SiC MESFETs based on multiparameter mobility model”, IEEE Transactions on Electron Devices, Vol.51, No.7, 2004. pp.1065-1068
[2] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Physical based model for trapping and self-heating effects in 4H-SiC MESFETs”, Applied Physics A: Materials Science and Processing, Vol. 91, n 2, May, 2008, pp. 287～290.
[3] Hongliang Lv, Yimen Zhang, Yuming Zhang, “A comprehensive model of frequency dispersion in 4H-SiC MESFET”, Solid-State Electronics, 2009, Vol. 53, No.3, pp285-291
[4] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs”, Chinese Physics，2008, Vol. 17, No.4, pp1410-1414.
[5] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Drain avalanche breakdown and gate instabilities in 4H-SiC MESFET’s”, Diamond and related materials, Vol. 13, No.9, pp. 1587-1591. 2004
[6] Hongliang Lv, Yimen Zhang, Yuming Zhang,“The influence of interface states on the current gain of 4H-SiC bipolar transistors”，Conf. on Electron Devices and Solid-State Circuits，2009
[7] Hongliang Lv, Yimen Zhang, Yuming Zhang, “A simple method of surface parameter extraction for gate Schottky contact in 4H-SiC MESFETs”, Chinese Journal of Semiconductors, Vol.29, No.3, 2008, PP. 458～460.
[8] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs”, Chinese Physics，2008, Vol. 17, No.4, pp1410-1414. (SCI：043，EI：)
[9] Jianhua Huang, Hongliang Lu, Yimen Zhang, Yuming Zhang, “Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode”, Chinese Physics , 20(11), pp 118401-1~118401-4.
[10] Yang Shi, Lu Hong-Liang, Zhang Yu-Ming, Zhang Yi-Men, Zhang Jin-Can, and Zhang Hai-Peng, “The Effects of Gamma Irradiation on GaAs HBT”, 2011 IEEE international Conference on Electron Devices and Solid-State Circuits.
[11] Zhang Jin-Can, Zhang Yu-Ming, Lu Hong-Liang, Zhang Yi-Men, Yang Shi, and Yuan Peng, ” A simplified VBIC model and SDD implementation for InP DHBT”, 2011 IEEE international Conference on Electron Devices and Solid-State Circuits.
[12] Gu Yang, Zhang Yu-Ming, Lu Hongliang, Zhang Yi-Men, “Analysis and Simulation of Inverter Employing SiC Schottky Diode”, 2011 IEEE international Conference on Electron Devices and Solid-State Circuits.
[13] Hongliang Lu, Yimen Zhang, Yuming Zhang, “The influence of interface states on the current gain of 4H-SiC bipolar transistors”, 2009 IEEE international Conference on Electron Devices and Solid-State Circuits.
[14] LV Hong-liang, ZHANG Yi-men, ZHANG Yu-ming, “Simulation Study for High Temperature Characteristics of SiC MESFETs”, Journal of Xidian University, Vol.28, No.6, 2001, pp776-780
[15] YANG linan, ZHANG yimen, LV hongliang, “Analytical Model of Large-signal DC I-V Characteristics for 4H-SiC RF Power MESFET’s”, Chinese Journal of semiconductors, Vol22, No.9, 2001, pp1160-1168
[16] Xinjun Niu, Yuming Zhang, Yimen Zhang, Honglinag Lv, “Two-dimensional Simulation of SiC Merged PiN/Schottky Diodes (MPS)”, Chinese Journal of Semiconductors, 2002，Vol.23,No.5,pp517-522
[17] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Numerical Modeling of Anisotropy in 4H-SiC MESFET’s”, 4th Conference on Computational Physic, 2002, Xi’an, China.
[18] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Drain avalanche breakdown and gate instabilities in 4H-SiC MESFET's”, MAR 30-APR 04, 2003, 41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 574-575, DALLAS, TEXAS.
[19] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Numerical Modeling of Anisotropy in 4H-SiC MESFET’s”, Chinese Physics, 2003, Vol. 12, No.8, pp895-898
[19] GUO Hong-xia, CHEN Yu-sheng, ZHOU Hui, ZHANG Yi-men GONG Ren-xi, LU Hong-liang, “Brief Introduction of MEDICI Software and Its Application in Ionization Radiation Effects”, Chinese Journal of Computational Physics, 2003，Vol. 20, No.4, pp372-376.
[20] Hongliang Lv, Yimen Zhang, Yuming Zhang, “The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junction diode”, Acta Physica Sinica, 2003, Vol.52, No.10, pp2541-2546
[21] Hongliang Lv, Yimen Zhang, Yuming Zhang, “A New Analytical model of the Breakdown Characterizes For 4H-SiC Devices”, Journal of Xidian University, 2003, Vol.30, No.6, pp.771-774
[22] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Analytical Model of Electron Transport Characteristics for 4H-SiC Material and Devices”, Chinese Physics, 2004, Vol.13, No.7, pp 1100-1103
[23] Hongliang Lv, Yimen Zhang, Yuming Zhang, “The Study on the Breakdown Characteristics of 4H-SiC Microwave Power MESFETs”, Chinese Journal of semiconductors, Vol.25,No.9,2004. pp.1132-1137
[24] Hongliang Lv, Yimen Zhang, Yuming Zhang, “The Simulation Breakdown Characteristic of 4H-SiC SBD with Edge Termination Extension”March 15-16, 2004, Extended Abstracts of the 4th International Workshop on Junction Technology, pp183-186
[25] Tao Zhang, Hongliang Lu, Yimen Zhang, Yuming Zhang, “sinusoidal steady state analysis on buried channel mosfets”, Chinese Physics Letters，2008, Vol.25, No.5, pp.1818-1821.
[26] Cao, Quan-Jun; Zhang, Yi-Men; Zhang, Yu-Ming; Lu, Hong-Liang; Wang, Yue-Hu; Chang, Yuan-Cheng; Tang, Xiao-Yan, “A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs”, Chinese Physics B, 2007, Vol.16, No.4, pp.1097-1100.
[27] Cao, Quan-Jun; Zhang, Yi-Men; Zhang, Yu-Ming; Lu, Hong-Liang; “New empirical large signal model of 4H-SiC MESFETs for the nonlinear analysis”, Chinese Journal of Semiconductors,2007, Vol.28, No.7, pp.1023-1029.
[28] Cao, Quan-Jun; Zhang, Yi-Men; Zhang, Yu-Ming; Lu, Hong-Liang; “Novel empirical large signal capacitance model for 4H-SiC MESFET”, Research and Progress of Solid State Electronics,2008, Vol.28, No.1, pp.33-37.
[29] Song, Qing-Wen; Zhang, Yu-Ming; Zhang, Yi-Men; Lu, Hong-Liang; Chen, Feng-Ping; Zheng, Qing-Li; “Analytical model for reverse characteristics of 4H-SiC merged PN-Schottky (MPS) diodes”, Chinese Physics, 2009, Vol.18, No.12, pp 5474-5478
[30] Hongliang Lu, Yimen Zhang, Yuming Zhang, “The extraction method for trap parameters in 4H-SiC MESFETs”, ACTA PHYSICA SINICA, 2008, Vol. 57, No. 5, pp. 2871-2874.
[31] Hongliang Lu, Yimen Zhang, Yuming Zhang, “The influence of trapping effect on frequency characteristics in 4H-SiC MESFETs”, Chinese Journal of Electronics, 2008, Vol. 36, No. 5, pp. 933-936.
[32] Hongliang Lu, Yimen Zhang, Yuming Zhang, “Analysis of the large-signal nonlinear characteristics of 4H-SiC MESFETs”, Chinese Journal of Microwave, 2009, Vol. 25, No. 2, pp. 78-82.

Patents
The design of high speed frequency divider based on GaAs HBTs. 2010
A InGaAs/GaAs HBTs frequency divider base on ECLipse. 2010
A equivalent circuit and parameter extraction method for HBTs. 2011
A InGaAs/GaAs HBTs I-Q Vector Modulation circuits, 2011
A high-speed programmable frequency divider, 2011

Team

Teaching
1.Undergraduate’s course:
Physics of Semiconductor Devices
Compound Semiconductor Devices

2.Gradute’s course:
Modern Semiconductor Devices

3.Editor in chief of textbook:
Compound Semiconductor Devices
English Textbook of Microelectronics

interational cooperation & communication
Attending the IEEE European Youth Federation 2010, with the IEEE president Gordon Day

Cooperation with professor Dominica in KU Leuven, Belgium

Work with professor Deham in IMEC, Belgium

Installing the HTCVD equipment with the engineer from Epigress company