西安电子科技大学微电子学院导师教师师资介绍简介-任泽阳

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基本信息
姓名：任泽阳
博士学科：微电子学与固体电子学
工作单位：微电子学院

联系方式
通信地址：西安市太白南路二号
电子邮箱：zeyangren@xidian.edu.cn
办公电话：
办公地点：东大楼

个人简介
任泽阳，中共党员，1991年8月生，山东枣庄人，师从中科院院士郝跃教授，2014年获西安电子科技大学微电子学学士学位，2018年在西安电子科技大学提前毕业获微电子学与固体电子学博士学位，并留校任教。主要研究关注于高性能金刚石材料生长CVD设备、大尺寸金刚石材料生长与器件研究、金刚石与氮化镓集成研究等。实现高性能金刚石材料生长MPCVD设备，成功制备高质量、大尺寸金刚石晶体材料，研制的金刚石MOSFET器件指标达到国际先进水平，获得国内外同行的一致认可。目前已在APL, IEEE EDL, IEEE JEDS，DRM，CPB, CPL等国内外著名期刊上发表SCI检索论文20余篇，授权国家发明专利5项。获批2019年博士后创新人才支持计划（当年400人），主持国家自然科学基金青年基金、陕西省自然科学基金青年项目、两项重点实验室基金、博士后科学基金面上项目、新教师基金等科研项目。国家重点研发计划青年项目参研单位负责人。并参与重大专项、国家重点研发计划以及自然基金面上项目等多个项目的研究工作。

主要研究方向
1．金刚石材料生长及器件研究
2. 金刚石-氮化镓异质集成研究

科学研究
本人承担的科研项目：
国家自然科学基金青年基金
陕西省自然科学基金青年基金
2019年博士后创新人才支持计划
国家重点研发计划青年项目子单位负责人
重点实验室基金2项（1项已结题）
第66批博士后科学基金面上项目
中央高校基本科研业务费

部分已发表学术论文
Zeyang Ren, Zhenfang Liang, Kai Su, Yufei Xing, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Yue Hao, Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer, Results in Physics, Volume 20, 2021, 103760.
Ren, Z. , Lv, D. , Xu, J. , Su, K. , & Hao, Y. . (2020). Performance of h-diamond mosfets with high temperature ald grown hfo 2 dielectric. Diamond and Related Materials, 106, 107846.
Zeyang Ren, Dandan Lv, Jiamin Xu, Jinfeng Zhang*, Jincheng Zhang*, Kai Su, Chunfu Zhangand Yue Hao.High Temperature (300℃) ALD Grown Al2O3 on Hydrogen Terminated Diamond: Band Offset and Electrical Properties of the MOSFETs[J].AppliedPhysicsLetters, 2020, 116(1).
Ren, Z. , He, Q. , Xu, J. , Yuan, G. , & Hao, Y. , "Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3 Gate Dielectric," inIEEE Access, vol. 8, pp. 50465-50471, 2020, doi: 10.1109/ACCESS.2020.**.
Su, K. , Ren, Z. , Zhang, J. , Liu, L. , & Hao, Y. . (2020). High performance hydrogen/oxygen terminated cvd single crystal diamond radiation detector. Applied Physics Letters, 116(9), 092104-.
Ze-Yang Ren, Jun Liu, Kai Su, Jin-Feng Zhang†, Jin-Cheng Zhang, Sheng-Rui Xu, and Yue Hao. Multiple enlarged growth of single crystal diamond by MPCVD with PCD-rimless top surface [J].Chin. Phys. B.Vol. 28, No. 12 (2019) 128103.
Zhicheng Su,†Zeyang Ren,Yitian Bao,Xiangzhou Lao,Jinfeng Zhang,Jincheng Zhang,Deliang Zhu,Youming Lu,Yue Haoand Shijie Xu. Luminescence landscapes of nitrogen-vacancy centers in diamond: quasi-localized vibrational resonances and selective coupling [J]. J. Mater. Chem. C, 2019, 7, 8086.
Zeyang Ren, Wanjiao Chen, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Guansheng Yuan, Kai Su, Zhiyu Lin and Yue Hao, High performance single crystalline diamond normally-off field effect transistors[J]. IEEE Journal of the Electron Devices Society. 2019, 7(1): 82-87.(SCI: 015)
张金风; 徐佳敏; 任泽阳*; 何琦; 许晟瑞; 张春福; 张进成; 郝跃。不同晶面的氢终端单晶金刚石场效应晶体管特性研究。物理学报， 2020年第2期。
Jin-Feng Zhang,* Wan-Jiao Chen, Ze-Yang Ren,* Kai Su, Peng-Zhi Yang, Zhuang-Zhuang Hu, Jin-Cheng Zhang, and Yue Hao.Characterization and mobility analysis of normally-off hydrogen-terminated diamond metal-oxide-semiconductor field effect transistors [J].PhysicaStatusSolidi(a).NOV 2019. (SCI:001).
Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Shengrui Xu, Yao Li, and Yue Hao. Diamond Field Effect Transistors With MoO₃ Gate Dielectric [J]. IEEE Electron Device Letters, 2017, 38(6): 786-789.(SCI: 023)
Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Dazheng Chen, Pengzhi Yang,Yao Li, and Yue Hao. Polycrystalline Diamond MOSFET With MoO₃ Gate Dielectric and Passivation Layer [J]. IEEE Electron Device Letters, 2017, 38(9): 1302-1304. (SCI: 029)
Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Dazheng Chen, Rudai Quan, Jiayin Yang, Zhiyu Lin, and Yue Hao. Polycrystalline diamond RF MOSFET with MoO₃ gate dielectric [J]. AIP Advances, 2017, 7(12): 125302. (SCI: 0004**)
Zeyang Ren, Guansheng Yuan, Jinfeng Zhang, Lei Xu, Jincheng Zhang, Wanjiao Chen, and Yue Hao. Hydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures [J]. AIP Advances, 2018, 8(7): 065026. (SCI检索)
Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Shengrui Xu, Chunfu Zhang, Yao Li, and Yue Hao. Growth and Characterization of the Laterally Enlarged Single Crystal Diamond Grown by Microwave Plasma Chemical Vapor Deposition[J]. Chinese Physics Letters, 2018, 35(7): 078101. (SCI检索)
Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Shengrui Xu, Chunfu Zhang, Rudai Quan, and Yue Hao. Characteristics of H-terminated single crystalline diamond field effect transistors[J]. Acta Physica Sinica. 2017, 66(20): 208101. (SCI: 0004**)
Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Pengzhi Yang, Dazheng Chen, Yao Li, and Yue Hao. Research on the hydrogen terminated single crystal diamond MOSFET with MoO3 dielectric and gold gate metal[J]. Journal of Semiconductors, 2018, 39(7): 074003. (DOI: 10.1088/1674-4926/39/7/074003)
Jinfeng Zhang, Zeyang Ren, Jincheng Zhang, Chunfu Zhang, Dazheng Chen, Shengrui Xu, Yao Li, and Yue Hao. Characterization and mobility analysis of MoO3-gated diamond MOSFET[J]. Japanese Journal of Applied Physics, 2018, 56, 100301 (2017). (SCI: 001)
Su, K. , Ren, Z. , Peng, Y. , Zhang, J. , & Hao, Y. . (2020). Normally-off hydrogen-terminated diamond field effect transistor with ferroelectric hfzrox/al2o3 gate dielectrics. IEEE Access, PP(99), 1-1.
Jinfeng Zhang, Pengzhi Yang, Zeyang Ren, Jincheng Zhang, Shengrui Xu, Chunfu Zhang, Lei Xu and Yue Hao. Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor[J]. Acta Physica Sinica. 2018, 67(6): 068101. (SCI: 028)
Yao Li, Jinfeng Zhang, Guipeng Liu, Zeyang Ren, Jincheng Zhang, and Yue Hao. Mobility of Two-Dimensional Hole Gas in H-Terminated Diamond[J]. 2018, 12(3): **. (SCI: 007)

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科研团队
团队教师
张金风，任泽阳，苏凯
博士研究生
何琦

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