以平面光刻工艺（“自上而下”的工艺路线）为基础的微电子器件工业制造技术的特征尺寸已经发展到65纳米，继续发展的道路十分艰难和费用高昂，但是科学界普遍认为集成电路器件技术的激烈竞争会使摩尔定律继续有效，缩小平面光刻工艺特征尺寸和克服传统微电子器件结构特征尺寸按比例缩小后各种器件物理的限制因素，使制造成本越来越高，市场难以承受，越来越多的趋势表明电子器件工业制造技术将发生变革，利用纳米电子材料构筑（“自下而上”）纳电子器件技术受到重视。采用辅助平面光刻工艺制作金属电极，而主要利用纳米材料作为零件组装构筑（“自下而上”）纳电子器件结构的新工艺路线有希望在十年内成为纳电子产业重大技术。硅基和碳基纳米材料（包括硅线、碳管、碳化硅晶须和碳纳米纤维等）、薄膜、织构体、仿生和复合材料的制备、结构、性能、操纵和加工方法十分重要，探索形成和优化纳米结构的方法和机理，解决这些材料在纳电子、纳制造、新能源和生物等领域的应用基础问题。研究纳米结构的物理和化学特性以及各种纳米效应，如量子限制、共振隧穿、弹道传输、库仑阻塞、奇异热导和光吸收等，探索纳米器件和纳米集成电路（VLSI）的新原理和制造技术，结合纳米材料构筑与微电子加工技术，设计和制作下一代纳电子器件和纳米传感器件。

Microelectronics technology based on optical lithography ("Top-Down" Process) has reached the 65 nm scale, it is very difficult and costly to continue. But the scientific community agrees that the fierce competition among IC device technologies will extend the Moore's Law. The market can barely afford the cost to continue to reduce the characteristic size and to overcome the physical constraints due to the proportional reduction of scales of IC devices. More and more evidences show that the microelectronics manufacturing technology will have a revolution. The technology of constructing nano-electronics by using nano-materials ("Bottom-Up" Process) has drawn much attention. Particularly noteworthy is the technology in which the metal electrodes are made by optical lithography and then the microelectronics are assembled by elementary units made of nano-materials. And this technology is estimated to mature and become the major technology in microelectronics in the coming decade. Synthesis, structural analysis, property evaluation, manipulation and processing techniques of Si and C based nanomaterials (including Si nanowires, carbon nanotubes, SiC nanowhiskers and carbon nanofibres), films, textures, bionic and composite materials are very important for fabrication of nanoelectronic devices. In the text we will learn the methods and mechanisms of the formation and optimization of nanostructures, and the ways to solve problems of the application fundamentals of these nanomaterials in the fields of nanoelectronics, nanofabrication, new energies and biothenologies, and the properties of physics and chemistry of the nanostructures, and nanoeffects such as quantum confinement, resonant tunneling, ballistic transportation, coulomb blockage, peculiar thermoconductivity and optical absorption, etc. , and new theories and technologies for nanodevices and electronic nanocircuits, and design and fabricate next generation nanoelectronic devices and nanosensors by combining the technologies of nanomaterial building and processing of microelectronics.