摘要/Abstract

掺杂是改善有机半导体载流子浓度和电荷输运能力的有效方法.路易斯碱负离子电子转移掺杂有机半导体，逐渐发展成为了一种温和、可控和可溶液加工的n型掺杂方法，并在有机光电器件中展现出较好的应用.本综述旨在探讨路易斯碱负离子和n型半导体之间的电子转移机制及其影响因素，总结基于该策略开发的界面材料和活性层掺杂等方面的应用，并展望其未来的发展方向.
关键词: 路易斯碱负离子, n型掺杂, 离子-π作用, 界面材料, 掺杂剂
Doping is an effective method to improve the carrier densities and charge transport capabilities of organic semiconductors. In recent years, n-doping of organic semiconductors via Lewis base anions has attracted much attentions of researchers, which takes place under mild condition and controllable fashion, hence exhibiting broad applications in optoelectronics. This perspective focuses on discussing the mechanism of anion-induced electron transfer to semiconductors, summarizing its recent progresses in interfacial materials and doped active layers for optoelectronic devices, as well as analyzing the future development of this field.
Key words: Lewis base anions, n-doping, anion-π interaction, interfacial materials, dopant


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