基本信息：
张建立，男，湖北黄梅人。2014年毕业于南昌大学材料物理与化学专业，获工学博士学位。现为南昌大学国家工程技术研究中心研究员，教育部发光材料与器件工程研究中心主任，南昌大学“双一流”学科建设发光新材料技术方向负责人。
主要从事硅衬底GaN相关研究，包括MOCVD装备研制、硅上GaN材料生长、InGaN长波段LED制备、LED材料与器件分析、多基色LED封装、LED可见光通信、Micro-LED微显示技术等。主持国家重点研发计划课题、国家自然科学基金青年基金各1项。发表论文、论著20余篇，获授权发明专利6项。
联系方式：
地址：南昌市高新区艾溪湖北路679号，330096
邮箱：zhangjianli@ncu.edu.cn
承担课题：
(1) 主持国家重点研发计划课题：超高能效白光LED光谱设计与新型高效器件研究；编号2017YFB**；经费388万；执行年限：2017.07-2020.12.
(2) 主持国家自然科学基金青年基金：基于V型坑的InGaN三维量子阱生长与性能研究；编号**；经费20万；执行年限：2017.01-2019.12.
发表论文：
(1)Gao, Jiang-Dong; Zhang, Jian-Li*; Zhu, Xin; Wu, Xiao-Ming; Mo, Chun-Lan; Pan, Shuan; Liu, Jun-Lin; Jiang, Feng-Yi, Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal-organic chemical vapour deposition, JOURNAL OF APPLIED CRYSTALLOGRAPHY, 52, 637-642, 2019
(2)Fengyi Jiang, Jianli Zhang, Qian Sun, ZhijueQuan, Light-Emitting Diodes: GaN LEDs on Si Substrate(专著), Springer, 2019
(3)Zhang, Jianli; Wang, Xiaolan*; Liu, Junlin; Mo, Chunlan; Wu, Xiaoming; Wang, Guangxu; Jiang, Fengyi, Study on Carrier transportation in InGaN based green LEDs with V-pits structure in the active region, OPTICAL MATERIALS, 86 , 46-50, 2018
(4)Wu, Qingfeng; Zhang, Jianli*; Mo, Chunlan; Wang, Xiaolan; Quan, Zhijue; Wu, Xiaoming; Pan, Shuan; Wang, Guangxu; Liu, Junlin; Jiang, Fengyi, Effects of the number of wells on the performance of green InGaN/GaN LEDs with V-shape pits grown on Si substrates, SUPERLATTICES AND MICROSTRUCTURES, 114, 89-96, 2018
(5) Qi, Weijing; Zhang, Jianli*; Mo, Chunlan; Wang, Xiaolan; Wu, Xiaoming; Quan, Zhijue; Wang, Guangxu; Pan, Shuan; Fang, Fang; Liu, Junlin; Jiang, Fengyi, Effects of thickness ratio of InGaN to GaN in superlattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substrates, JOURNAL OF APPLIED PHYSICS, 122, 8, 2017
(6)Liu Jun-Lin; Zhang Jian-Li*; Wang Guang-Xu; Mo Chun-Lan; Xu Long-Quan; Ding Jie; Quan Zhi-Jue; Wang Xiao-Lan; Pan Shuan; Zheng Chang-Da; Wu Xiao-Ming; Fang Wen-Qing; Jiang Feng-Yi, Status of GaN-based green light-emitting diodes, CHINESE PHYSICS B, 24, 6, 2015
(7)Zhang Jian-Li; Liu Jun-Lin; Pu Yong; Fang Wen-Qing; Zhang Meng; Jiang Feng-Yi, Effects of Carrier Gas on Carbon Incorporation in GaN, CHINESE PHYSICS LETTERS, 31, 3, 2014
(8)Zhang, Jianli; Xiong, Chuanbing; Liu, Junlin; Quan, Zhijue; Wang, Li; Jiang, Fengyi, High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 114, 4, 1049-1053, 2014