基本情况：
潘拴，博士、副研究员，山东博兴人，南昌大学赣江青年****。2003年、2009年于中国科学技术大学分别获得学士、博士学位。2009年-2010年在香港中文大学物理系从事研究工作。2012年加入南昌大学国家硅基LED工程技术研究中心。
研究方向：
半导体发光材料及器件的表征和光电性能研究。
联系方式：
电话：
邮箱：panshuan@ncu.edu.cn
承担课题情况：
主持完成国家自然科学基金青年基金项目：氮化镓基LED材料的二次离子质谱定量分析；项目号 **；经费25万元；执行年限2015.1-2017.12。
发表论文情况：
1.Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs, Chen Xu, Changda Zheng*, Xiaoming Wu, Shuan Pan, Xingan Jiang, Junlin Liu and Fengyi Jiang, Journal of Semiconductors，2019, 40(5), 052801
2.Efficient InGaN-based yellow-light-emitting diodes，Fengyi Jiang*, Jianli Zhang, Longquan Xu, Jie Ding, Guangxu Wang, Xiaoming Wu, Xiaolan Wang, Chunlan Mo, Zhijue Quan, Xing Guo, Changda Zheng, Shuan Pan, and Junlin Liu, Photonics Research, 2019, 7(2), 144-148
3.Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quantum-Well Light-Emitting Diodes with V-Shaped Pits Grown on Si Substrates, Qing-feng Wu, Sheng Cao*, Chun-lan Mo, Jian-li Zhang, Xiao-lan Wang, Zhi-jue Quan, Chang-da Zheng, Xiao-ming Wu, Shuan Pan, Guang-xu Wang, 《中国物理快报(英文版)》，2018,0999-103
4.Performance enhancement of yellow InGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing the InGaN/GaN superlattice interlayer, Xixia Tao, Junlin Liu*, Jianli Zhang, Chunlan Mo, Longquan Xu, Jie Ding, Guangxu Wang, Xiaolan Wang, Xiaoming Wu, Zhijue Quan, Shuan Pan, Fang Fang, and Fengyi Jiang,Optical Materials Express , 2019，8（5），1221-1230
5. Effects of the number of wells on the performance of greenInGaN/GaN LEDs with V-shape pits grown on Si substrates, Qingfeng Wu, Jianli Zhang*, Chunlan Mo, Xiaolan Wang, Zhijue Quan, Xiaoming Wu, Shuan Pan, Guangxu Wang, Junlin Liu, Fengyi Jiang, Superlattices and Microstructures, 2018，114, 89-96
6.The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on Si Substrates via Temperature-Dependent Electroluminescence, Wei-Jing Qi, Long-Quan Xu*, Chun-Lan Mo, Xiao-Lan Wang, Jie Ding, Guang-Xu Wang, Shuan Pan, Jian-Li Zhang, Xiao-Ming Wu, Jun-Lin Liu, Feng-Yi Jiang, CHIN. PHYS. LETT.2017, 34(7), 077301
7.Effects of thickness ratio of InGaN to GaN in superlattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substrates， Weijing Qi, Jianli Zhang*, Chunlan Mo, Xiaolan Wang, Xiaoming Wu, Zhijue Quan, Guangxu Wang, Shuan Pan, Fang Fang, Junlin Liu, and Fengyi Jiang，Jounal of Applied Physics,2017, 122, 084504
8. InGaN/GaN超晶格厚度对Si衬底GaN基蓝光发光二极管光电性能的影响，齐维靖，张萌*，潘拴，王小兰，张建立，江风益，《物理学报》,2016, 65( 7), 077801
9.Status of GaN-based green light-emitting diodes, Liu Jun-Lin, Zhang Jian-Li *, Wang Guang-Xu, Mo Chun-Lan, Xu Long-Quan, Ding Jie, Quan Zhi-Jue, Wang Xiao-Lan, Pan Shuan, Zheng Chang-Da, Wu Xiao-Ming, Fang Wen-Qing, Jiang Feng-Yi, Chin. Phys. B, 2015,24,(6),067804
10.硅衬底高光效GaN 基蓝色发光二极管；江风益, 刘军林* , 王立, 熊传兵, 方文卿, 莫春兰, 汤英文, 王光绪, 徐龙权,丁杰, 王小兰, 全知觉, 张建立, 张萌, 潘拴, 郑畅达； 《中国科学:物理学 力学 天文学》；2015,45(6)，067302