姓名： 刘璐

职称：讲师

专业方向：微电子学系

个人简介：
姓名：刘璐

职称：讲师/硕士生导师/工学博士

实验室：西七楼509（微电子学系）

邮箱：liulu@hust.edu.cn

电话：**

学习工作经历：

2008年本科毕业于华中科技大学电子科学与技术系，并以优异成绩保送本系微电子学与固体电子学专业免试研究生，2009年转为硕博连读博士研究生，在攻读博士学位期间，主要从事高k栅堆栈电荷陷阱型MONOS存储器的研究工作，并3次赴香港大学进行合作研究。作为技术骨干参与并承担的科研项目有：国家自然科学基金—小尺寸低压高速长保持力电荷陷阱型悬浮栅存储器的研究；博士后科学基金项目—新型双隧道层纳米晶悬浮栅存储器研究；香港政府研究基金与香港大学发展基金—MONOS电荷陷阱型存储器研究。在Applied Physics Letters，Thin Solid Films等国际高水平学术期刊上发表论文十余篇。2013年3月于华中科技大学光学与电子信息学院微电子学与固体电子学专业获得博士学位后留校任教。
主讲课程：

微电子器件与IC设计（本科生）

研究方向：

非挥发性半导体存储器、Si/Ge/化合物半导体为基MOS场效应晶体管

主要科研项目：

博士点基金，No. **005，2014年1月～2016年12月（第一）

自主创新基金，No. 2013QN037，2013年5月～2014年12月（第一）

国家自然科学基金青年基金，No.**，2015年1月~2017年12月（第一）
学术成就和学术兼职：

1、L. Liu, J. P. Xu^*, J. X. Chen, P. T. Lai, “Improved Characteristics for MOHOS Memory with Oxygen-Rich GdO as Charge Storage Layer annealed by NH₃”, AppliedPhysicsA, on line, 2013

2、L. Liu, J. P. Xu^*, F. Ji, J. X. Chen, P. T. Lai, “Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure”, Applied Physics Letters , 101(13), 133503, 2012.

3、L. Liu, J. P. Xu^*, F. Ji, J. X. Chen, P. T. Lai, “Improved Memory Characteristics by NH₃-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications”, Applied Physics Letters,101(3), 033501, 2012.

4、L. Liu, J. P. Xu^*, J. X. Chen, X. D. Huang, P. T. Lai, “Ultranthin HfON/SiO₂Dual Tunneling Layer for Improving the Electrical Properties of Metal-Oxide-Nitride-Oxide- Silicon Memory”, Thin Solid Films, 524, 263-267, 2012.

5、L. Liu, J. P. Xu^*, X. D. Huang, P. T. Lai, “A Novel MONOS Memory with High-k HfLaON as Charge-Storage Layer”, IEEE Transactions on Device and Materials Reliability, 11(2), 244-247, 2011.

6、L. S. Wang, L. Liu, J. P. Xu^*, S. Y. Zhu, Y. Huang, P. T. Lai, “Electrical properties of HfTiON gate-dielectric GaAs metal-oxide-semiconductor capacitor with AlON as interlayer”, IEEE Transactions on Electron Devices, 61(3), 742-746, 2014.

7、X. D. Huang, L. Liu, J. P. Xu, P. T. Lai^*, “Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y₂O₃films”, Applied Physics Letters, 99(11), 112903-112905, 2011.

8、X. D. Huang, L. Liu, J. P. Xu, P. T. Lai^*, “Improved performance of yttrium-doped Al₂O₃as inter-poly dielectric for flash-memory applications”, IEEE Transactions on Device and Materials Reliability, 11(3), 490-494, 2011.

9、朱剑云，刘璐，李育强，徐静平^*，退火工艺对LaTiON和HfLaON存储层MONOS存储器特性的影响，物理学报，62(3), 038501-6，2013

CV:

liuLu

Title:Lecturer

Phone:86-**

Email:liulu@hust.edu.cn

AcademicAreas:Nonvolatilesemiconductormemory;High-kdielectric;Si-,Ge-,GaAs-basedMOSfieldeffecttransistor

AsalectureratschoolofOpticalandElectronicinformation,HuazhongUniversityofScience&TechnologyGraduate,LiuLuismainlyinengagedinresearchworkofnonvolatilesemiconductorstoragematerialsanddevices,includingSi-basedSONOScharge-trappingmemory,GaAsMOS-basedquantumdotmemory.Asnext-generationapplicationofthetraditionalfloating-gateflashmemory,theconventionalSiO2andSi3N4aresubstitutedbythehigh-kdielectricsandCompoundsemiconductormaterial,andhenceoptimizationofthematerial,structureandfabricatingprocessesofitsblockinglayer,chargestoragelayerandtunnelinglayerwillbethemainapproachofimprovingperformancesofcharge-trappingmemory.Theoretically,ananalyticalmodelofthecharge-trappingmemoryreliabilityisestablished.Thecorrectnessandaccuracyofthemodelareconfirmedbygoodagreementofthesimulatedresultswithexperimentaldata.MorethanfifteenpapershavebeenpublishedinAppliedPhysicsLettersandotherwell-knowninternationaljournals.

AcademicDegrees

PhDinMicroelectronicsandSolidStateElectronics，2013，HuazhongUniversityofScience&TechnologyGraduate,SchoolofOpticalandElectronicinformation;

B.E.2008,HuazhongUniversityofScience&Technology,DepartmentofElectronicScience&Technology.

ProfessionalExperience

HuazhongUniversityofScience&Technology,SchoolofOpticalandElectronicinformation,Lecturer(2013-present);

SelectedPublications

·ImprovedCharacteristicsforMOHOSMemorywithOxygen-RichGdOasChargeStorageLayerannealedbyNH3,AppliedPhysicsA,online,2013

·ImprovedCharge-TrappingPropertiesofTiON/HfONDualChargeStorageLayerbyTaperedBandStructure,AppliedPhysicsLetters,101(13),133503,2012.

·ImprovedMemoryCharacteristicsbyNH3-NitridedGdOasChargeStorageLayerforNonvolatileMemoryApplications,AppliedPhysicsLetters,101(3),033501,2012.

·UltranthinHfON/SiO2DualTunnelingLayerforImprovingtheElectricalPropertiesofMetal-Oxide-Nitride-Oxide-SiliconMemory,ThinSolidFilms,524,263-267,2012.

·ANovelMONOSMemorywithHigh-kHfLaONasCharge-StorageLayer,IEEETransactionsonDeviceandMaterialsReliability,11(2),244-247,2011.

·ElectricalpropertiesofHfTiONgate-dielectricGaAsmetal-oxide-semiconductorcapacitorwithAlONasinterlayer,IEEETransactionsonElectronDevices,61(3),742-746,2014.

·Improvedcharge-trappingpropertiesofHfYONfilmfornonvolatilememoryapplicationsincomparisonwithHfONandY2O3films,AppliedPhysicsLetters,99(11),112903,2011.

·NitridedSrTiO3ascharge-trappinglayerfornonvolatilememoryapplications,AppliedPhysicsLetters,98(24),242905,2011.

·Improvedperformanceofyttrium-dopedAl2O3asinter-polydielectricforflash-memoryapplications,IEEETransactionsonDeviceandMaterialsReliability,11(3),490-494,2011.

WorkingPapers

SelectedCases

AwardsandHonors

CoursesTaught

·Microelectronicdevicesandintegratedcircuitdesign

Centers/Programs

·TheDoctoralFundofMinistryofEducationofChina,No.**005

·TheFundamentalResearchFundsfortheCentralUniversities,No.2013QN037

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