姓名： 李祎

职称：讲师

专业方向：微电子学系

个人简介：
姓名：李祎

职称：讲师、硕士生导师

系：微电子学系

研究所：信息存储材料及器件研究所

联系方式：

电话：**

Email: liyi@hust.edu.cn

办公地点：武汉光电国家实验室F105
学习工作经历：

2005年至2009年 华中科技大学电子科学与技术专业本科生；

2009年至2010年 华中科技大学微电子学与固体电子学专业硕士研究生；

2010年至2014年 华中科技大学微电子学与固体电子学专业博士研究生；

2014年至2015年 任华中科技大学光学与电子信息学院研究助理；

2015年至现在 任华中科技大学光学与电子信息学院讲师。
学科专业/研究方向：

(1) 微电子学与固体电子学专业/微电子材料与器件方向；

(2) 电子信息材料与元器件专业/信息存储材料与器件方向；
主要成果：

主要从事忆阻器物理机制，及其在阻变信息存储、类脑认知存储、非易失性逻辑运算等领域的应用研究。参与承担了国家863重大项目子课题、863面上项目、国家国际科技合作项目、国家自然科学基金面上项目等国家级科研项目。目前发表论文近十篇。申请国际发明专利及国内发明专利十余项。
部分代表性论文：

1. L. Xu, Y. Li,N. N. Yu, Y. P. Zhong, and X. S. Miao*, “Local order origin of thermal stability enhancement of amorphous Ag doping GeTe”, Applied Physics Letters, 106, 031904 (2015).

2.Y. Li, Y. P. Zhong, J. J. Zhang, L. Xu, Q. Wang, H. J. Sun, H. Tong, X. M. Cheng and X. S. Miao*, Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems, Nature Publishing GroupScientific Reports, 4, 4906 (2014).

3.Y. Li, Y. P. Zhong, L. Xu, J. J. Zhang, X. H. Xu, H. J. Sun, and X. S. Miao*, Ultrafast synaptic events in a chalcogenide memristor, Nature Publishing Group Scientific Reports, 3, 1619 (2013).

4. Y. Li, Y. P. Zhong, J. J. Zhang, X. H. Xu, Q. Wang, L. Xu, H. J. Sun, and X. S. Miao*, Intrinsic memristance mechanism of crystalline stoichiometric Ge₂Sb₂Te₅, Applied Physics Letters, 103, 043501 (2013).

5. Y. Li, Y. P. Zhong, Y. X. Zhou, Y. F. Deng, L. Xu, and X. S. Miao*, AND, OR, NOT Boolean logic in phase change memory, Journal ofApplied Physics, 114, 234503 (2013).

6. J. J. Zhang, H. J. Sun*, Y. Li, Q. Wang, X. H. Xu, and X. S. Miao, AgInSbTe memristor with gradual resistance tuning, Applied Physics Letters, 102, 183513 (2013).

7. X. M. Long, X. S. Miao*, J. J. Sun, X. M. Cheng, H. Tong, Y. Li, D. H. Yang, J. D. Huang, and C. Liu, Dynamic switching characteristic dependence on sidewall angle for phase change memory, Solid-State Electronics, 67, 1 (2012).
Dr. Yi LI

Lecturer

School of Optical and Electronic Information

HuazhongUniversityof Science and Technology

430074, Wuhan, P.R. China.

Phone: (86)**

Email:liyi@hust.edu.cn

Academic Areas:Phase change memory, Memristor, novel electronic devices that capable of information storage and processing, such as electronic synaptic devices, nonvolatile logic devices, and their related physics and applications.
Academic Degrees

PhD in Microelectronics and Solid State Electronics, 2014, Huazhong University of Science and Technology;

BA in Electronic Science and Technology, 2009, Huazhong University of Science and Technology.
Professional Experience

Huazhong University of Science & Technology, School of Optical and Electronic information, Lecturer (2015.03-present);

Huazhong University of Science & Technology, School of Optical and Electronic information, Research assistant (2014-2015.02);
.

Selected Publications

1. L. Xu, Y. Li,N. N. Yu, Y. P. Zhong, and X. S. Miao*, “Local order origin of thermal stability enhancement of amorphous Ag doping GeTe”, Applied Physics Letters, 106, 031904 (2015).

2.Y. Li, Y. P. Zhong, J. J. Zhang, L. Xu, Q. Wang, H. J. Sun, H. Tong, X. M. Cheng and X. S. Miao*, Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems, Nature Publishing GroupScientific Reports, 4, 4906 (2014).

3.Y. Li, Y. P. Zhong, L. Xu, J. J. Zhang, X. H. Xu, H. J. Sun, and X. S. Miao*, Ultrafast synaptic events in a chalcogenide memristor, Nature Publishing Group Scientific Reports, 3, 1619 (2013).

4.Y. Li, Y. P. Zhong, J. J. Zhang, X. H. Xu, Q. Wang, L. Xu, H. J. Sun, and X. S. Miao*, Intrinsic memristance mechanism of crystalline stoichiometric Ge₂Sb₂Te₅, Applied Physics Letters, 103, 043501 (2013).

5.Y. Li, Y. P. Zhong, Y. X. Zhou, Y. F. Deng, L. Xu, and X. S. Miao*, AND, OR, NOT Boolean logic in phase change memory, Journal ofApplied Physics, 114, 234503 (2013).

6. J. J. Zhang, H. J. Sun*, Y. Li, Q. Wang, X. H. Xu, and X. S. Miao, AgInSbTe memristor with gradual resistance tuning, Applied Physics Letters, 102, 183513 (2013).

7. X. M. Long, X. S. Miao*, J. J. Sun, X. M. Cheng, H. Tong, Y. Li, D. H. Yang, J. D. Huang, and C. Liu, Dynamic switching characteristic dependence on sidewall angle for phase change memory, Solid-State Electronics, 67, 1 (2012).