康晋锋 职称：教授
研究所：微纳电子学研究院
研究领域：智能化信息获取与存储处理技术（包括类脑计算与存储计算一体化器件与硬件架构实现技术）、新型纳米器件与系统设计与应用技术、新型存储器（RRAM）技术与应用、高K/金属栅技术等
办公电话：86-10-6275 6745
电子邮件：kangjf@pku.edu.cn
个人主页：




科研/教育经历:
康晋锋，北京大学信息学院教授，北京大学上海微电子研究院副院长，IEEE Transactions on Electron Devices期刊编辑（Editor）。1984年毕业于大连工学院物理系获理学学士；分别于1992和1995年获在北京大学理学硕士和理学博士学位；1996年至1997年，在北京大学微电子所从事博士后研究工作；1997开始在北京大学微电子所任副教授，2001年8月开始任教授。2002年至2003年受邀以访问教授身份在新加坡国立大学半导体纳米器件实验室（SNDL）从事合作研究一年。

研究成果概况:
先后在新型存储器件技术、氧化物阻变器件（RRAM）与忆阻器件的物理机制与器件优化及其高密度3D 集成技术、类脑计算与存储/计算一体化架构等新型的信息处理系统与技术、高K/金属栅器件与集成技术等方面取得系列研究成果。在本领域核心期刊和学术会议，包括Advanced Materials、Nano Lett.、ACS Nano、IEEE EDL, IEEE TED, Appl. Phys. Lett.等核心期刊与VLSI、IEDM等顶级学术会议发表论文300余篇，SCI他引累计超过2800余次， 2篇论文为ESI高被引论文。先后受邀在IEDM、ESSDERC、MRS、ASP-DAC、SSDM、ISCAS、ICSICT等系列国际学术会议以及AMAT、IBM、IMEC、ITRI等国际著名研发机构做特邀报告。已申请中国发明专利100余项、其中40余项获授权。申请国际发明专利10余项，5项已获授权。
主持完成了国家863计划重大专项课题、国家973项目课题、国家自然科学基金项目等研究任务。曾先后获得国家科技进步二等奖（2008）、教育部科技进步一等奖（2007）、北京市技术发明一等奖（2007）等奖励。
在国际合作方面，与美国Stanford大学、Yale大学、New York大学Albany分校、美国应用材料公司、SEMATCH、新加坡微电子所、欧洲微电子研究中心IMEC、巴塞罗那自由大学等都有广泛、深入的合作关系，合作取得了系列创新研究成果。

主要研究方向:
目前的研究领域主要包括：智能化信息获取与存储处理技术（包括类脑计算与存储计算一体化器件与硬件架构实现技术）、新型纳米器件与系统设计与应用技术、新型存储器（RRAM）技术与应用、高K/金属栅技术等。
Selected Publications(*Corresponding Author):
1. J.F. Kang, B. Gao, P. Huang, Z. Chen, Y.D. Zhao, C. Liu, H.T. Li, X.Y. Liu, “Oxide-based RRAM: Requirements and Challenges of Modeling and Simulation”, 2015 IEEE International Electron Devices Meeting (IEDM2015), December 7-9, 2015, Washington, DC, USA (Invited Talk)
2. J.F. Kang, B. Gao, P. Huang, Z. Chen, Y.D. Zhao, C. Liu, R.Z. Han, L.F. Liu, X.Y. Liu, Y.Y. Wang, “Physical Understanding and Optimization of Resistive Switching Characteristics in Oxide-ReRAM”, 46th European Solid-State Device Research Conference (ESSDERC/ESSCIRC 2016), pp.154-9 (Lausanne, Switzerland, September 12-15, 2016) (Invited Talk)
3. J.F. Kang, P. Huang, Y.D. Zhao, R.Z. Han, Z. Chen, C. Liu, L.F. Liu, and X.Y. Liu, “RRAM-based Cross-bar Arrays: Towards A Novel Data Processing Architectures”, International Conference Electronic Materials and Nanotechnology for Green Environment 2016 (ENGE 2016), November 6-9, 2016, Jeju, South Korea (Invited Talk)
4. J.F. Kang, B. Gao, Z. Chen, Y.D. Zhao, W.J. Ma, Z. Zhou, H.F. Ye, L.F. Liu, X.Y. Liu, “TMO-ReRAM based synaptic device for neuromorphic computing”, 2015 International Conference on Solid State Devices and Materials (SSDM2015), Sep. 27-30, 2015, Sapporo, Japan (Invited Talk)
5. J.F. Kang, B. Gao, P. Huang, Z. Chen, L.F. Liu, X.Y. Liu, S.M. Yu, H.-S. Philip Wong, “Design and Optimization of TMO-ReRAM based Synaptic Devices”, SPICE-Workshop on Bad Metal Behavior in Mott Systems, June 29-July 2, 2015, Schlo? Waldthausen, Mainz, Germany (Invited Talk)
6. J.F. Kang, B. Gao, P. Huang, Z. Chen, Y.D. Zhao, C. Liu, H.T. Li. F.F. Zhang, L.F. Liu, X.Y. Liu, “Design and Optimization of Transition Metal Oxide-based Resistive Switching Devices for Data Storage and Computing Systems”, 2015 MRS Spring Meeting, April 6-10, 2015, San Francisco, California, USA (Invited Talk)
7. J.F. Kang, H. T. Li, P. Huang, Z. Chen, B. Gao, X. Y. Liu, Z. Z. Jiang, and H.-S. P. Wong,“Modeling and Design Optimization of ReRAM”, 20TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE (ASP-DAC 2015), pp.576-581 (Makuhari, Japan, January 19th - 22th, 2015) (Invited Talk)
8. J.F. Kang, B. Gao, P. Huang, L.F. Liu, X.Y. Liu, H.Y. Yu, S. Yu, H.-S. P. Wong, “RRAM based Synaptic Devices for Neuromorphic Visual Systems”, 2015 IEEE INTERNATIONAL CONFERENCE ON DIGITAL SIGNAL PROCESSING (DSP), pp.1219-1222 (SINGAPORE, JUL 21-24, 2015) (Invited Talk)
9. J.F. Kang, B. Gao, Y.J. Bi, B. Chen, X.Y. Liu, S.M. Yu, H-Y. Chen, H.-S. Philip, Wong, “TMO-based Memoristive Devices and Aplication for Neuromorphic Systems”, CIMTEC 2014, June.16-19, 2014, Montecatini Terme, Italy (Invited Talk)
10. J. F. Kang, B. Gao, B. Chen, P. Huang, F. F. Zhang, X. Y. Liu, H.-Y. Chen, Z. Jiang, H.-S. P. Wong, and Shimeng Yu, Scaling and Operation Characteristics of HfOx based Vertical RRAM for 3D Cross- Point Architecture, 2014 IEEE International Symposium on Circuits and Systems (ISCAS2014), June 1-5, 2014, Melbourne, Australian, p.417 (Invited Talk)
11. J.F. Kang, Bin Gao, Bing Chen, Peng Huang and Xiaoyan Liu, “Modeling of Transition Metal Oxide Based RRAM Devices”, International Conference on Solid State Devices and Materials (SSDM2013), Sept. 24-27, 2013, Fukuoka, Japan (Invited Talk)
12. J.F. Kang, B. Gao, B. Chen, P. Huang, F.F. Zhang, X.Y. Liu, “Fundamental RRAM Mechanism and Potential Paths to High Density of RRAM Array”, Varian Semiconductor’s “Future Team” Meeting”, April 30, 2013, Gloucester, Massachusetts, USA (Invited Talk)
13. J. F. Kang, “Oxide-Based RRAM-Unified Physical Mechanism and Implementation for Cell Design Optimization”, 1st International Workshop on Resistive RAM, October 20th -21st, 2011, Leuven, Belgium (Invited Talk)
14. J.F. Kang, B. Gao, B. Chen, F.F. Zhang, L.F. Liu, X.Y. Liu, “Material-Oriented Methodology for High Performance TMO-based RRAM”, (IUMRS-ICA 2011), 19-22 Sept. 2011, Taipei (Invited Talk)
15. P. Huang, J.F. Kang*, Y.D. Zhao, S.J. Chen, R.Z. Han, Z. Zhou, Z. Chen, W.J. Ma, M. Li, L.F. Liu, and X.Y. Liu, “Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits”, Adv. Mater. 2016, Vol.28, pp.9758-9764
16. Y.D. Zhao, J. J. Hu, P. Huang, F. Yuan, Y. Chai, X. Y. Liu, and J. F. Kang*, “A Physics-Based Compact Model for Material- and Operation-Oriented Switching Behaviors of CBRAM” Tech. Dig of IEDM2016, p.188
17. Y.D. Zhao, P. Huang, Z. Chen, C. Liu, C, H.T. Li, B. Chen, W.J. Ma, F.F. Zhang, B. Gao,X.Y. Liu, J.F. Kang*, “Modeling and Optimization of Bilayered TaOx RRAM Based on Defect Evolution and Phase Transition Effects”, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 63(4), pp.1524-1532, APR 2016
18. Y.D. Zhao, P. Huang*, Z.H. Guo, Z.Y. Lun, B. Gao, X.Y. Liu, J.F. Kang*, ”Atomic Monte-Carlo Simulation for CBRAM with Various Filament Geometries”, 2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD2016) (Nuremberg, GERMANY, SEP 06-08, 2016), pp. 153-156, 2016
19. Z. Chen, B. Gao, Z. Zhou, P. Huang, H.T. Li, W.J. Ma, D.B. Zhou, L.F. Liu, X.Y. Liu, J.F. Kang*, H.Y. Chen, “Optimized Learning Scheme for Grayscale Image Recognition in a RRAM Based Analog Neuromorphic System”, Tech. Dig of IEDM2015, p.467;
20. H. Li, Z. Jiang, P. Huang, Y. Wu, H.-Y. Chen, B. Gao, X. Liu, J.F. Kang* and H.-S. P. Wong*, “Variation-aware, reliability-emphasized design and optimization of RRAM using SPICE model,” Design, Automation & Test in Europe (DATE), pp. 1425-1430, March 9-13, 2015 (Grenoble, France)
21. H.T. Li, Z. Chen, W.J. Ma, B. Gao, P. Huang, L.F. Liu, X.Y. Liu, J.F. Kang, “Nonvolatile Logic and In Situ Data Transfer Demonstrated in Crossbar Resistive RAM Array”, IEEE ELECTRON DEVICE LETTERS Vol.36, pp.1142-1145, NOV 2015
22. H.T. Li, B. Gao, H.Y. Chen, Z. Chen, P. Huang, R. Liu, L. Zhao, Z.Z. Jiang, L.F. Liu, X.Y. Liu, S.M. Yu, J.F. Kang, Y. Nishi, H. -S. Philip Wong, “3-D Resistive Memory Arrays: From Intrinsic Switching Behaviors to Optimization Guidelines”, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol.62, pp. 3160-3167, OCT 2015
23. H. Li, B. Gao, Z. Chen, Y. Zhao, P. Huang, H. Ye, L. Liu, X. Liu and J. Kang*, “A learnable parallel processing architecture towards unity of memory and computing,” Sci. Rep., vol. 5, ID 13330, Aug. 2015
24. J. F. Kang, B. Gao, B. Chen, P. Huang, F. F. Zhang, X. Y. Liu, H.-Y. Chen, Z. Jiang, H.-S. P. Wong, and Shimeng Yu, Scaling and Operation Characteristics of HfOx based Vertical RRAM for 3D Cross- Point Architecture, 2014 IEEE International Symposium on Circuits and Systems (ISCAS2014) (June 1-5, 2014, Melbourne, Australian), p.417 (Invited talk)
25. B. Gao, B. Chen, R. Liu, F.F. Zhang, P. Huang, L.F. Liu, X.Y. Liu, J.F. Kang*, H-Y. Chen, S.M. Yu, H.-S. Philip Wong, “3-D Cross-Point Array Operation on AlOy/HfOx-Based Vertical Resistive Switching Memory”, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol.61(5), pp.1377-1381, MAY 2014
26. B. Gao, Y.J. Bi, H-Y. Chen, R. Liu, P. Huang, B. Chen, L.F. Liu, X.Y. Liu, S.M. Yu, H.-S. Philip Wong, J.F. Kang*, “Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems”, ACS NANO Vol.8(7), pp. 6998-7004, JUL 2014
27. H-Yu Chen, B. Gao, H.T. Li, R. Liu, P. Huang, Z. Chen, B. Chen, F.F. Zhang, L. Zhao, Z.Z. Jiang, L.F. Liu, X.Y. Liu, J.F. Kang*, S.M. Yu, Y. Nishi, H.-S. Philip Wong*, “Towards High-Speed, Write-Disturb Tolerant 3D Vertical RRAM Arrays”, 2014 Symposium on VLSI technology (VLSI-T 2014), p.196
28. H.T. Li, P. Huang, B. Gao, B. Chen, X.Y. Liu, J.F. Kang*, “A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation”, IEEE ELECTRON DEVICE LETTERS, Vol. 35(2), pp.211-213, FEB 2014
29. P. Huang, X.Y. Liu, B. Chen, H.T. Li, Y.J. Wang, Y.X. Deng, K.L. Wei, L. Zeng, B. Gao, G. Du, X. Zhang, and J. F. Kang*, “A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations”, IEEE Trans. Electron Devices, vol. 60, pp. 4090-4097, DEC 2013.
30. Y.X. Deng, H-Y. Chen, B. Gao, S. Yu, S-C. Wu, L. Zhao, B. Chen, Z. Jiang, T-H Hou, Y. Nishi, J.F. Kang*, and H.-S. Philip Wong, “Design and Optimization Methodology for 3D RRAM Arrays”, Tech. Dig of IEDM2013, p.629
31. P. Huang, B. Chen, Y.J. Wang, F. F. Zhang, L. Shen, R. Liu, L. Zeng, G. Du, X. Zhang, B. Gao, J.F. Kang*, X.Y. Liu, X.P. Wang, B.B. Weng, Y.Z. Tang, G.-Q. Lo, D.-L. Kwong, “Analytic Model of Endurance Degradation and Its Practical Applica-tions for Operation Scheme Optimization in Metal Oxide Based RRAM”, Tech. Dig of IEDM2013, p.597
32. B. Gao, B. Chen, F. Zhang, L. Liu, X. Liu, J. Kang*, H. Yu, and B. Yu, “A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 60, pp. 1379-1383, APR 2013.
33. Y. Deng, P. Huang, B．Chen, X.L. Yang, B. Gao, J.C. Wang, L. Zeng, G. Du, J.F. Kang*, X.Y. Liu*, “RRAM Crossbar Array with Cell Selection Device: A Device and Circuit Interaction Study”, IEEE Trans. Electron Devices, vol.60, no.2, pp.719-726, Feb. 2013.
34. B. Chen, J. F. Kang*, B. Gao, Y.X. Deng, L.F. Liu, X.Y. Liu, Z. Fang, H.Y. Yu, X.P. Wang, G.Q. Lo, D-L. Kwong, “Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect”, IEEE ELECTRON DEVICE LETTERS, Vol.34, pp.1292-1294, OCT 2013
35. S. Yu, H-Y. Chen, Y. Deng, B. Gao, Z. Jiang, J.F. Kang*, H.-S. Philip Wong*, “3D Vertical RRAM – Scaling Limit Analysis and Demonstration of 3D Array Operation”, 2013 Symposium on VLSI technology (VLSI-T 2013), p.158
36. P. Huang, X.Y. Liu*, W.H. Li, Y.X. Deng, B. Chen, Y. Lu, B. Gao, L. Zeng, K.L. Wei, G. Du, X. Zhang, and J.F. Kang*, “A Physical Based Analytic Model of RRAM Operation for Circuit Simulation”, Tech. Dig of IEDM2012, p.605
37. Hong-Yu Chen, S. Yu, B. Gao, P. Huang, J.F. Kang*, and H.-S. Philip Wong*, “HfOx Based Vertical Resistive Random Access Memory for Cost-Effective 3D Cross-Point Architecture without Cell Selector”, Tech. Dig of IEDM2012, p.497
38. S. Yu, B. Gao, Z. Fang, H.Y. Yu, J.F. Kang, and H.-S. Philip Wong*, “A Neuromorphic Visual System Using RRAM Synaptic Devices with Sub-pJ Energy and Tolerance to Variability: Experimental Characterization and Large-Scale Modeling”, Tech. Dig of IEDM2012, p.239
39. H-Y. Chen, H. Tian, B. Gao, S. Yu, J. Liang, J.F. Kang, Y.G. Zhang, T-L. Ren, and H.-S. Philip Wong*, “Electrode/Oxide Interface Engineering by Inserting Single-Layer Graphene: Application for HfOx–Based Resistive Random Access Memory”, Tech. Dig of IEDM2012, p.489
40. X. P. Wang, Z. Fang, X. Li, B. Chen, B. Gao, J. F. Kang, Z. X. Chen, A. Kamath, N. S. Shen, N. Singh, G. Q. Lo, and D. L. Kwong, “Highly Compact 1T-1R Architecture (4F2 Footprint) Involving Fully CMOS Compatible Vertical GAA Nano-Pillar Transistors and Oxide-Based RRAM Cells Exhibiting Excellent NVM Properties and Ultra-Low Power Operation”, Tech. Dig of IEDM2012, p.493
41. P. Huang, B. Gao, B. Chen, F. Zhang, L. Liu, G. Du, J. Kang, and X. Liu*, “Stochastic Simulation of Forming, SET and RESET Process for Transition Metal Oxide-based Resistive Switching Memory,” in SISPAD, 2012, pp. 312-315
42. B. Gao, *J.F. Kang, Y.S. Chen, F.F. Zhang, B. Chen, P. Huang, L.F. Liu, X.Y. Liu, Y.Y. Wang, X.A. Tran, Z.R. Wang, H.Y. Yu, Albert Chin, “Oxide-Based RRAM: Unified Microscopic Principle for Unipolar and Bipolar Switching”, Tech. Dig of IEDM2011, p.417
43. B. Chen, Y. Lu , B. Gao, Y.H. Fu, F.F. Zhang, P. Huang, Y.S. Chen, L.F. Liu, X.Y. Liu, *J.F. Kang, Y.Y. Wang, Z. Fang, H.Y. Yu, X. Li, N. Singh, G. Q. Lo, D. L. Kwong, “Physical Mechanisms of Endurance Degradation in TMO-RRAM”, Tech. Dig of IEDM2011, p.283
44. B. Gao, H.W. Zhang, B. Chen, L.F. Liu, X.Y. Liu, R.Q. Han, J.F. Kang*, Z. Fang, H.Y. Yu, B. Yu, D.-L. Kwong, “Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory”, IEEE Electron Device Lett.32 (3), p.276, March 2011
45. B. Chen, B. Gao, S.W. Sheng, L.F. Liu, X.Y. Liu, Y.S. Chen, Y. Wang, R.Q. Han, B. Yu, J.F. Kang*, “A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors”, IEEE Electron Device Lett.32 (3), p.282, March 2011
46. B. Gao, B. Sun, H.W. Zhang, L.F. Liu, X.Y. Liu, R.Q. Han, J.F. Kang*, and B. Yu, “Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory”, IEEE ELECTRON DEVICE LETTERS, 30 (12): 1326-1328 DEC 2009
47. X. Sun, B. Sun, L.F. Liu, N. Xu, X.Y. Liu, R.Q. Han, J.F. Kang*, G.C. Xiong, T.P. Ma, “Resistive switching in CeOx films for nonvolatile memory application”, IEEE Electron Device Lett., 30(4), pp.334-336, Apr. 2009
48. B. Gao, H. W. Zhang, S.M. Yu, B. Sun, L. F. Liu, X.Y. Liu, Y. Wang, R.Q. Han, J.F. Kang*, B. Yu, Y.Y. Wang, “Oxide-Based RRAM: Uniformity Improvement Using A New Material-Oriented Methodology”, 2009 Symposium on VLSI technology (VLSI-T2009), p.30
49. B. Gao, S. Yu, N. Xu, L.F. Liu, B. Sun, X.Y. Liu, R.Q. Han, J.F. Kang*, B. Yu, Y.Y. Wang, “Oxide-Based RRAM Switching Mechanism: A New Ion Transport Recombination Model”, Tech. Dig of IEDM2008, p.563
50. N. Xu, B. Gao, L.F. Liu, Bing Sun, X.Y. Liu, R.Q. Han, J.F. Kang*, and B. Yu, “A unified physical model of switching behavior in oxide-based RRAM”, 2008 Symposium on VLSI Technology (VLSI-T2008), p.100