西安电子科技大学微电子学院导师教师师资介绍简介-王霄

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基本信息
姓名: 王霄
博士学科：凝聚态物理
工作单位：微电子学院

联系方式
通信地址：陕西省西安市雁塔区太白南路2号西安电子科技大学东大楼210B
电子邮箱：x.wang@xidian.edu.cn
办公电话：

个人简介
王霄，2012年获得武汉大学物理学院理学学士学位，2014年获得法国里昂一大理学硕士学位，2017年获得武汉大学理学博士学位。2017年7月起加入西安电子科技大学，讲师。主要研究方向为基于氮化镓等宽禁带半导体的电子器件、光电器件和传感器等。在国际刊物发表论文20多篇，其中第一作者或通讯作者10篇，参加国家重点研发计划和国家自然科学基金项目多项，参加国际会议多次。

主要研究方向
1．GaN基电子器件；
2．GaN基光电器件；
3．III-N和ZnO宽禁带半导体材料研究。

科学研究
目前本人承担的科研项目：
1. 国家重点研发计划战略性先进电子材料专项项目，2017YFB**，GaN基新型电力电子器件关键技术，2017/07-2021/06，1489万，在研，参加；
2. 国家重点研发计划战略性先进电子材料专项项目，2017YFB**，高阈值电压高速度常关型GaN基平面功率器件，2017/07-2021/06，578万，在研，参加；
3. 国家自然科学基金重大项目，**，复合量子阱结构的局域光场增强光电耦合和转换机理，2020/01-2024/12，590万，在研，参加；
4.中央高校基本科研业务费，JB181110，新型InAlN/GaN高电子迁移率晶体管性能研究，2018/01-2020/12，11万，已结题，主持。

学术论文
2017年至今：
Y. He, X. Wang*, J. Y. Zhou, T. T. Wang, M. K. Ren, G. Q. Chen, T. F. Pu, X. B. Li, M. Jia, Y. Y. Bu, J. P. Ao, “Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment,” IEEE Transactions on Electron Devices, vol. 68, pp. 1250-1254, 2021.
X. Wang*, Q.Ye, L. H. Bai, X. Su, T. T. Wang, T. W. Peng, X. Q. Zhai, Y. Huo, H. Wu, C. Liu, X. H. Ma, Y. Hao and J. P. Ao, “Enhanced UV Emission from ZnO on Silver Nanoparticle Arrays by the Surface Plasmon Resonance Effect,” Nanoscale Research Letters, vol. 16, p. 8, 2021.
T. F. Pu, Y. Chen, X. B. Li, T. P. Peng, X. Wang, J. Li, W. He, J. W. Ben, Y. M. Lu, X. K. Liu, and J. P. Ao, “Gate structure dependent normally-off AlGaN/GaN heterostructure field-effect transistors with p-GaN cap layer”, Journal of Physics D-Applied Physics, vol. 53, p. 415104,2020.
Y. Wang, L. A. Li, C. Li, J. P. Ao, X. Wang, and Y. Hao, “Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation,” IEEE Journal of the Electron Devices Society, vol. 8, pp. 134-139, 2020.
Z. W. Chen, Y. Y. Bu, L. Wang, X. Wang, and J. P. Ao, “Single-sites Rh-phosphide modified carbon nitride photocatalyst for boosting hydrogen evolution under visible light,” Applied Catalysis B: Environmental, vol. 274, p. 119117, 2020.
T. T. Wang, X. Wang*, X. B. Li, J. C. Zhang and J. P. Ao, “Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes,” Chinese Physics Letters, vol. 36, p. 057101, 2019.
T. Peng, X. Wang*, and J. Ao, “Progress in Key Technologies for GaN-based Power Electronic Devices,” Jounal of Power Supply, vol. 17, pp. 4-15, 2019.
M. J. Zheng, P. B. Gui, X. Wang, G. Z. Zhang, J. X. Wan, H. Zhang, G. J. Fang, H. Wu, Q. Q. Lin, and C. Liu, "ZnO ultraviolet photodetectors with an extremely high detectivity and short response time," Applied Surface Science, vol. 481, p. 437, 2019.
Y. Zhang, Y. Li, D. Ni, Z. Chen, X. Wang, Y. Bu, and J. P. Ao, “Improvement of BiVO4 Photoanode Performance During Water Photo-Oxidation Using Rh-Doped SrTiO3 Perovskite as a Co-Catalyst,” Advanced Functional Materials, p. **, 2019.
L. Bai, J. Wen, Y. Tang, H. Wu, H. Zhang, X. Wang, W. He, and R. Sun. “Synergic effect of graphene and core-shells structured Au NR@ SiO2@ TiO2 in dye-sensitized solar cells,” Nanotechnology, vol 30, p. 465401, 2019.
M. Zheng, Y. Xu, X. Wang, G. Zhang, W. Li, J. Li, L. Zhang, H. Wu, Q. Lin, and C. Liu. “ZnO-Based Ultraviolet Photodetectors with Tunable Spectral Responses,” Physica status solidi (RRL)-Rapid Research Letters, vol. 13, p. **, 2019.
X. Wang, L. Bai, H. Zhang, X. Su, H. Wu and C. Liu, “Ag nanoparticle surface-plasmon-resonance-enhanced electroluminescence from semipolar n-ZnO/p-GaN heterojunction light-emitting diodes,” Applied Physics Express, vol. 11, p. 102101, 2018.
T. Pu, X. Wang, Q. Huang, T. Zhang, X. Li, L. Li and J. P. Ao, "Normally-off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process," IEEE Electron Device Letters, vol. 40, pp. 185-188, 2018.
Y. Zhang, G. Han, H. Wu, X. Wang, Y. Liu, J. Zhang, H. Liu, H. Zheng, X. Chen, C. Liu and Y. Hao, “Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment,” Nanoscale Research Letters, vol. 13, p. 237, 2018.
T. Zhang, T. Pu, T. Xie, L. Li, Y. Bu, X. Wang, and J. P. Ao, "Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors," Chinese Physics B, vol. 27, p. 78503, 2018.
2017年前：
X. Wang, X. Gan, G. Zhang, X. Su, M. Zheng, Z. Ai, H. Wu, and C. Liu, "The function of an In_0.17Al_0.83N interlayer in n-ZnO/In_0.17Al_0.83N/p-GaN heterojunctions," Applied Surface Science, vol. 393, pp. 221-224, 2017.
X. Wang, G. Zhang, Y. Xu, H. Wu, and C. Liu, "Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates," Nanoscale Research Letters, vol. 12, p. 145, 2017.
X. Wang, W. Wang, J. Wang, H. Wu, and C. Liu, "Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by Mg_Ga δ doping in (AlN)_m/(GaN)_n superlattice," Scientific Reports, vol. 7, p. 44223, 2017.
M. Zheng, G. Zhang, X. Wang, J. Wan, H. Wu, and C. Liu, "Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers.," Nanoscale Research Letters, vol. 12, p. 267, 2017.
X. Su, G. Zhang, X. Wang, C. Chen, H. Wu, and C. Liu, "Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts," Nanoscale research letters, vol. 12, p. 469, 2017.
G. Zhang, H. Wu, X. Wang, D. Zhang, T. Wang, and C. Liu, "Modulation of the dissipation factor in transparent AlZnO/ZrO2/AlZnO capacitors," Journal of Alloys and Compounds, vol. 690, pp. 777-782, 2017.
X. Wang, G. Z. Zhang, Y. Xu, X. W. Gan, C. Chen, Z. Wang, Y. Wang, J. L. Wang, T. Wang, H. Wu, and C. Liu, "Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al₂O₃ as Dielectric Layers," Nanoscale Research Letters, vol. 11, p.21, 2016.
G. Zhang, H. Wu, X. Wang, T. Wang, and C. Liu, "Transparent capacitors with hybrid ZnO: Al and Ag nanowires as electrodes," Nanotechnology, vol. 27, p. 105204, 2016.

荣誉获奖

科研团队
团队教师
1. 敖金平教授
2. 补钰煜副教授
3. 王霄讲师
博士研究生
徐洋、王婷婷、何悦、陈治伟、李阳、蒲凯文、王琳、贾茂、姜风秋
硕士研究生
18级彭韬玮、徐杨、冶琼、陈国强、赵家悦、陈曦、张越、李小伟
19级翟小崎、张赫男、张艺涵、李缓
20级郭晨、崔振海、陈可跃、刘杰、张菡芷、滑明卓、张焱
毕业博士研究生
张亚萍
毕业硕士研究生
黄倩、刘辰阳、任梦珂、李啸宇

课程教学
目前本人承担的本科教学任务：
《射频电路基础》
《概率论与数理统计》
《学业指导》
目前本人承担的研究生教学任务：
《新型半导体器件的研究与应用》

招生要求
欢迎报考敖金平教授的博士和硕士研究生，联系方式：jpao@xidian.edu.cn

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