陈斌


1. 基本信息
姓名：陈斌
职称：特别研究员，博士生导师
邮箱：cbcce@sjtu.edu.cn
通讯地址：上海市东川路800号 上海交大化学化工学院

2. 教育背景
1999. 09– 2003. 07 武汉理工大学，学士，导师：张联盟
2003. 09– 2006. 07 清华大学， 硕士 ，导师：潘伟
2006. 08– 2009. 07 日本筑波大学， 博士 ，导师：Takashi Sekiguchi
3. 工作经历
2006. 08– 2009. 07 日本物质材料研究所，初级研究员，合作导师：Takashi Sekiguchi
2009. 08– 2011. 03 日本产业技术综合研究所，博士后，合作导师：Hirofumi Matsuhata
2011. 03– 2013. 02 澳大利亚悉尼大学，博士后，合作导师：廖晓舟
2013. 04– 2014. 05 日本物质材料研究所，博士后，合作导师：Takashi Sekiguchi
2014. 05– 2017. 08 美国加州理工学院，博士后，合作导师：Ahmed Zewail
2017. 09– 至今 上海交通大学化学化工学院，特别研究员

4. 研究方向
1）材料与器件的超快动力学
2）四维超快电镜的超高时空分辨成像-衍射-能谱
3）纳米光电磁学
4）催化反应动力学
5）太阳能电池材料

5. 招生信息
热诚欢迎对超快科学、材料物化、催化化学、光电磁学、生物化学等方向感兴趣的本科生、硕士生、博士生、博士后加入我们课题组。

6. 荣誉奖励
2019 上海高等学校****计划
2018 上海浦江人才计划
7. 代表性论文

16. J. He, Z. Liu, Z. Cao, H. Zhang, Y. Meng, B. Chen*, D. Zhong*. Visualizing the redox reaction dynamics of perovskite nanocrystals in real and reciprocal space. J. Phys. Chem. Lett. 11, 2550-2558 (2020).
15. B. Chen*, X. W. Fu, M. Lysevych, H. H. Tan, C.Jagadish. Four-dimensional probing of phase-reaction dynamics in Au/GaAs nanowires. Nano Letters 19, 781-786 (2019).
14. X. W. Fu*, S. D. Pollard, B.Chen, B. K. Yoo, H. Yang, Y. Zhu*. Optical manipulation of magnetic vortices visualized in situ by Lorentz electron microscopy. Science Advances 4, eaat3077 (2018).
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1 13. X. W. Fu, B.Chen, J. Tang, M. Th. Hassan, A. H. Zewail. Imaging rotational dynamicsof nanoparticles in liquid by 4D electron microscopy. Science 355, 494-498(2017).
2 12. B. Chen, X. W. Fu, J. Tang, M. Lysevych, H. H. Tan, C.Jagadish, A. H. Zewail. Dynamics and control of gold-encapped gallium arsenidenanowires imaged by 4D electron microscopy. PNAS 114, 12876-12881 (2017).
3 11. X. W. Fu, B.Chen, J. Tang, A. H. Zewail. Photoinduced nanobuble-driven superfastdiffusion of nanoparticles imaged by 4D electron microscopy. ScienceAdvances 3, e** (2017).
4 10. B. Chen, J. Wang, Q. Gao, Y. J. Chen, X. Z. Liao, C. S. Lu,H. H. Tan, Y. W. Mai, J. Zou, S. P. Ringer, H. J. Gao, C. Jagadish.Strengthening brittle semiconductor nanowires through stacking faults: Insightsfrom in situ mechanical testing. Nano Letters 13, 4369-4373 (2013).
5 9. B. Chen, Q. Gao, Y. B. Wang, X. Z. Liao, Y. W. Mai, H. H.Tan, J. Zou, S. P. Ringer, C. Jagadish. Anelastic behavior in GaAssemiconductor nanowires. Nano Letters 13, 3169-3172 (2013).
6 8. B. Chen, Q. Gao, L. Chang, Y. B. Wang, Z. B. Chen, X. Z.Liao, H. H. Tan, J. Zou, S. P. Ringer, C. Jagadish. Attraction of semiconductornanowires: An in situ observation. Acta Materialia 61, 7166-7172 (2013).
7 7. B. Chen, J. Wang, Y. W. Zhu, X. Z. Liao, C. S. Lu, Y. W. Mai,S. P. Ringer, F. J. Ke, Y. G. Shen. Deformation-induced phase transformation in4H-SiC nanopillars. Acta Materialia 80, 392-399 (2014).
8 6. B. Chen, H. Matsuhata, T. Sekiguchi, K. Ichinoseki, H.Okumura. Surface defects and accompanying imperfections in 4H-SiC: Optical,structural and electrical characterization. Acta Materialia 60, 51-58(2012).
9 5. B. Chen,T. Sekiguchi, T. Ohyanagi, H. Matsuhata, A. Kinoshita, H. Okumura. Evidence fora general mechanism modulating carrier lifetime in SiC. Physical Review B 81,233203 (2010).
10 4. B. Chen, J. Chen, Y. Z. Yao, T. Sekiguchi, H. Matsuhata, H.Okumura. In situ monitoring ofstacking fault formation and its carrier lifetime mediation in p-type 4H-SiC. Applied Physics Letters 105, 042104 (2014).
11 3. B. Chen, H. Matsuhata, T. Sekiguchi, A. Kinoshita, K. Ichinoseki,H. Okumura. Tuning minority-carrier lifetime through stacking fault defects:The case of polytypic SiC. Applied Physics Letters 100, 132108 (2012).
12 2. B. Chen,H. Matsuhata, T. Sekiguchi, T. Ohyanagi, A. Kinoshita, H. Okumura. Pinning ofrecombination-enhanced dislocation motion in 4H-SiC: Role of Cu and EH₁ complex. Applied Physics Letters 96, 212110 (2010).
13 1. B. Chen, J. Chen, T. Sekiguchi, T. Ohyanagi, H. Matsuhata, A.Kinoshita, H. Okumura, F. Fabbri. Electron-beam-induced current study ofstacking faults and partial dislocations in 4H-SiC Schottky diode. Applied Physics Letters 93, 033514(2008).