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广西大学物理科学与技术学院
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博士后合作导师,博士研究生导师,硕士研究生导师
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学习经历1984.9-1988.7， 兰州大学 物理系 学士1988.9-1991.7， 兰州大学 物理系 硕士1991.8-1996.7， 兰州大学 物理系 博士工作经历：2017.4-现在 广西大学物理技术与工程学院, 教授 （八桂****）2006.5-2017.3 Sensor Electronic Technology,Inc., 研发部主任2002.3-2006.5 University of South Carolina, 副教授， Research Fellow2000.8-2002.3 IMRE ( Singapore), Research Fellow1991.9-1996.8 电子工业部第十三研究所, 高级工程师， 工程师
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宽禁带半导体材料与器件
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光电信息研究中心建设（T-杰出人才,八桂****配套专项)八桂****人才项目（T,自制区人才项目）
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发表文章：1.Max Shatalov, Wenhong Sun, Rakesh Jain, Alex Lunev, Xuhong Hu, Alex Dobrinsky, Yuri Bilenko, Jinwei Yang, Gregory Garrett, Michael Wraback,MichaelShur, and RemisGaska, “High Power AlGaNUltraviolet Light Emitters”, Semicond. Sci. Technol. 29, 084007( 2014). 2.M. Shatalov, W. Sun, A. Lunev, X. Hu, A. Dobrinsky, Y. Bilenko, J. Yang,M. Shur, R. Gaska, C. Moe, G. Garrett, M. Wraback, “AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%”, Appl. Phys. Express 5, 082101(2012).3.W. Sun*, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko,M. Shur, and R. Gaska, “Efficiency Droop in 245-247 nm AlGaN Light-Emitting Diodes with Continuous Wave 2 mW Output Power”, Appl. Phys. Lett. 96, 061102 (2010).4.W. H. Sun*, J. P. Zhang, J. W. Yang, H. P. Maruska, M. A. Khan, R. Liu, and F. A. Ponce, “Fine Structure of AlN/AlGaNSuperlattice Grown by Pulse Atomic Layer Epitaxy for dislocation filtering”, Appl. Phys. Lett. 87, 211915(2005).5.W. H. Sun*, J. W. Yang, J. P. Zhang, M. E. Gaevski , C. Q. Chen , J. W. Li, Z. Gong, M. Su, and M. Asif Khan, “n-Al 0.75 Ga0.25N Epilayers for 250nm Emission Ultraviolet Light Emitting Diodes”, Phys. Stat. Sol. (c) 2, 2083(2005). 6.W. H. Sun, J. P. Zhang, V. Adivarahan, A. Chitnis, M. Shatalov, S. Rai, S. WuV. Mandavilli, J. W. Yang, and M. A. Khan, “AlGaN Based 280nm Light-Emitting Diodes with continuous wave powers in excess of 1.5 mW”, Appl. Phys. Lett. 85, 531( 2004).7.W. H. Sun, V. Adivarahan, M. Shatalov, Y. B. Lee, S. Wu, J. W. Yang, and M. A. Khan, “Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280nm”, JPN J. Appl. Phys.43, L1419(2004).8.W. H. Sun*, J. W. Yang, C. Q. Chen, J. P. Zhang, M. E. Gaevski, E. Kuokstis, V. Adivarahan, H. M. Wang, Z. Gong, M. Su, and M. Asif Khan, “GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices”, Appl. Phys. Lett. 83, 2599(2003).9.W. H. Sun*, E. Kuokstis, M. Gaevski, J. P. Zhang, C. Q. Chen, H. M. Wang, J. W. Yang, G. Simin, M. Asif Khan, R. Gaska, and M. S. Shur, “Strong ultraviolet emission from non-polar AlGaN/GaN quantum wells grown over r-plane sapphire substrates”, Phys. Stat. Sol. (a) 200, 48(2003).10.W. H. Sun*, S. J. Chua, L. S. Wang, and X. H. Zhang, “Outgoing multiphonon resonant Raman scattering and luminescence in Be- and C-implanted GaN”, J. Appl. Phys.91, 4917(2002).11.W. H. Sun, J. C. Zhang, L. Dai, K. M. Chen, and G. G. Qin. “Gamma-ray irradiation effects on Fourier transform infrared grazing incidence reflection-absorption spectra of the GaN films”, J. Phys.: Condens. Matter.13, 5931(2001).12.W. H. Sun, S. T. Wang, J. C. Zhang, K. M. Chen, G. G. Qin, Y. Z. Tong, Z. J. Yang, G. Y. Zhang, Y. M. Pu, Q. L. Zhang, \"Formation and Dissolution of Microcrystalline Graphite in Carbon-Implanted GaN\" J. Appl. Phys. 88, 5662(2000).13.K. M. Chen, W. H. Sun*, K. Wu, C. Y. Li, and G. G. Qin, “Electrical Characteristics for Solid C60/n-GaNHeterojunctions”, J. Appl. Phys. 85, 6935 (1999).14.W. H. Sun*, K. M. Chen, K. Wu, C.Y. Li, G. G. Qin, Q. L. Zhang, X. H. Zhou and Z. N. Gu, “Rectifying properties of solid C60/n-GaN, C70/n-GaN and C70/p-GaNheterojunctions”, Solid-State Electronics 44, 555(2000).15.W. H. Sun, K. M. Chen, G. G. Qin et al. “Using Fourier Transform Infrared Grazing Incidence Reflectivity to Study Local Vibrational Modes in GaN”, J. Appl. Phys. 85, 6430(1999).授权专利：1.US**B2: “Non-Uniform Multiple Quantum Well Structure”, 2017.2.US patent 2013/**:“Epitaxy Technique for Reducing Threading Dislocations in Stressed Semiconductor Compounds”, 2017.3.US patent **: “Patterned Layer Design for Group III Nitride Layer Growth”, 2015.4.US patent **B2: “Epitaxy Technique for Growing Semiconductor Compounds”, 2017.5.US patent **, “STRESS RELIEVING SEMICONDUCTOR LAYER”, 2016.6. US patent **B2 “SEMICONDUCTOR STRUCTURE WITH REDUCED BOWING AND INCREASED RELIABILITY”, 2017.
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