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博士研究生导师,硕士研究生导师
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物理科学与工程技术学院
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2017.7-至今，教授，北京化工大学理学院2010.7-2017.6，研究员，中科院苏州纳米技术与纳米仿生研究所；高级工程师，苏州纳维科技有限公司2006.4-2010.7，研究员，日本三重大学电子电气工程系光电子研究中心2006.10-2010.3，讲师（研究机构研究员），日本名古屋工业大学极微器件机能系统研究中心2005.12-2006.10，博士后，以色列理工学院电气工程系微电子研究中心
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氮化物半导体材料生长、相关器件的研发和物理性能的研究
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1. Shuxin Tan, Jicai Zhang*, Takashi Egawa*，and Gang Chen, “Influence of quantum-well number andAlN electron blocking layer on the electroluminescence properties of AlGaN deep ultravioletlight-emitting diodes”, Appl. Sci. 8, 2402 (2018). 通讯作者.2. Shuxin Tan, Xuguang Deng, Boshun Zhang, and Jicai Zhang, “Thermal stability of F ion-implant isolatedAlGaN/GaN”, Sci. China-Phys. Mech. Astron. 61, 127311 (2018).3. Shuxin Tan, Jicai Zhang*, Takashi Egawa*, Gang Chen, Xiangdong Luo, Ling Sun and Youhua Zhu,“Influence of quantum-well width on the electroluminescence properties of AlGaN deep ultravioletlight-emitting diodes at different temperatures”, Nanoscale Research Letters 13, 334 (2018). 通讯作者.4. Ruixiang Hou, Lei Li, Xin Fang, Ziang Xie, Shuti Li, Weidong Song, Rong Huang, Jicai Zhang, ZengliHuang, Qiangjie Li, Wanjing Xu, Engang Fu, G.G. Qin, Ambient-temperature diffusion and gettering of Ptatoms in GaN with surface defect region under 60Co gamma or MeV electron irradiation, Nuclear Inst. andMethods in Physics Research B 414 (2018) 74–78.5. Xuewei Li, Jicai Zhang , Maosong Sun, Binbin Ye，Jun Huang, Zhenyi Xu, Wenxiu Dong, Jianfeng Wang,and Ke Xu, “Effect of annealing temperature on Ti/Al/Ni/Au ohmic contacts on undoped AlN films”Journal of Semiconductor, 38, 116002-1-4 (2017). 通讯作者6. Xujun Su, Jicai Zhang, Jun Huang , Jinping Zhang , Jianfeng Wang, Ke Xu, “Defect structure of hightemperature hydride vapor phase epitaxy–grown epitaxial (0001) AlN/sapphire using growth modemodification process”, J. Cryst. Growth, 467 (2017) 82–87.7. Jun Huang, Mu Tong Niu, Ji Cai Zhang, Wei Wang, Jian Feng Wang, Ke Xu, “Reduction of threadingdislocation density for AlN epilayer via a highly compressive-stressed buffer layer”, J. Cryst. Growth,459 (2017) 159–162.8. Lin Qi, Yu Xu, Zongyao Li, En Zhao, Song Yang, Bing Cao, Jicai Zhang, Jianfeng Wang, Ke Xu, “Stressanalysis of transferable crack-free gallium nitride microrods grown on graphene/SiC substrate”, MaterialsLetters 185, 315–318 (2016).9. Zongyao Li, Yu Xu, Bing Cao, Lin Qi, Shunyu He, Chinhua Wang, Jicai Zhang, Jianfeng Wang, Ke Xu, “Raman spectra investigation of the defects of chemical vapor deposited multilayer graphene and modifiedby oxygen”, Superlattices and Microstructures 99, 125e130 (2016).10.X J Su, M T Niu, X H Zeng, J Huang, J C Zhang, J P Zhang, J F Wang and K Xu, “Identifyingdislocations and stacking faults in GaN films by scanning transmission electron microscopy”, Mater. Res.Express 3, 086401 (2016).11.Liu, Xue-Hua; Zhang, Ji-Cai; Huang, Jun; Yang, Ming-Ming; Su, Xu-Jun; Ye, Bin-Bin; Wang, Jian-Feng;Zhang, Jin-Ping; Xu, Ke, “Influence of growth temperature on intrinsic stress distribution in aluminumnitride grown by hydride vapor phase epitaxy”, Materials Express, 6(4), 367-370(2016).12.Ting Liu，Jicai Zhang *, Xujun Su, Jun Huang, Jianfeng Wang, and Ke Xu*, “ Nucleation and growth of(10-11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy”, Sci. Rep. 6, 26040 (2016)，通讯作者13.M. S. Sun, J. C. Zhang *, J. Huang, J. F. Wang, and K. Xu*, “AlN thin film grown on different substratesby hydride vapor phase epitaxy”, J. Cryst. Growth, 436 (2016) 62–67. 通讯作者14.M. S. Sun, J. C. Zhang*, J. Huang, X. W. Li, L. J. Wang, X. H. Liu, J. F. Wang and K. Xu*, Influence ofthickness on strain state and surface morphology of AlN grown by HVPE, Journal of Semiconductor,37,12301 (2016). 通讯作者15.S Tan, T Egawa, X D Luo, L Sun, Y H Zhu and J C Zhang*，“Influence of barrier height and p-claddinglayer on electroluminescent performance of AlGaN deep ultraviolet light-emitting diodes”，J. Phys. D:Appl. Phys. 49 (2016) 125102. 通讯作者16.Y. Y. Hu, T. F. Zhou, S. N. Zheng, X. H. Liu, J. J. Zhao, X. J. Su, J. Huang, Y. X. Qiu, J. C. Zhang, and K.Xu, “Quasi-transverse optical phonon mode in self-generated semipolar AlN grains embedded in c-orientedAlN matrix grown on sapphire using hydride vapor phase epitaxy”, J. Appl. Phys. 119, 205707 (2016).17.Xue-Hua Liu, Ji-Cai Zhang, Xu-Jun Su, Jun Huang, Shu-Nan Zheng, Yun-Yun Hu,Bin-Bin Ye, Jing-JingZhao, Jian-Feng Wang, Jin-Ping zhang,and Ke Xu, “Fabrication of crack-free AlN film on sapphire byhydride vapor phase epitaxy using an in situ etching method”, Applied Physics Express 9, 045501 (2016).18.阳明明, 莫亚娟, 王晓丹, 曾雄辉, 刘雪华,黄 俊, 张纪才, 王建峰、徐 科，“AlN: Er 薄膜在不同退火温度下应力诱导的微观结构演变”，无机材料学报， 31(3), 285-290 (2016).19.Advanced Materials Research Vols. 1061-1062 (2015) pp 175-17920.Xiaojing Gong, Ke Xu, Jun Huang, Ting Liu, Guoqiang Ren, Jianfeng Wang, Jicai Zhang * “Evolution ofthe surface morphology of AlN epitaxial film by HVPE” Journal of Crystal Growth, 409, 100 (2015). 通讯作者
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1. 徐俞，张纪才，王建峰，徐琳，徐科，“一种闸板阀”，7.22. 张纪才，王建峰，徐科，“III 族氮化物/异质衬底复合模板”， 7.93. 张纪才，王建峰，徐科，“III 族氮化物/异质衬底复合模板及其制备方法”， 1.14. 张纪才，刘婷，王建峰，徐科，“一种半极性 AlN 模板”，专利申请号 20**5. 张纪才，刘婷，王建峰，徐科，“一种制备半极性 AlN 模板的方法”，专利申请号 8X6. 张纪才，李雪威，王建峰，徐科，“AlN 上的欧姆接触电极结构及其制作方法”，专利申请号：5.3。7. 李雪威，张纪才，王建峰，徐科, “衬底、半导体器件及衬底制作方法” 。专利申请号：20**。8. 徐真逸，徐科，张纪才，王建峰，“一种使用拉曼光谱仪测试纤锌矿结构 AlN 单晶晶向的方法及系统”，专利申请号：5.3。。9. 陈刚，张纪才，王建峰，徐科。一种深紫外半导体器件及其制作方法，申请号：9.010.张纪才，陈刚，李雪威，王建峰，徐科。基于图形化模板的半导体器件及其制作方法，申请号：3.9
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