姓名:李颖弢
教授
所在教研室:微电子
电子邮箱:li_yt06@lzu.edu.cn
招生专业: 微电子学与固体电子学
首页>教师个人主页
个人简历
李颖弢，博士生导师，甘肃省****基金获得者。2006年7月和2011年7月分别获得兰州大学微电子学与固体电子学专业学士和博士学位。主要从事新型阻变存储技术及其集成应用，集成电路等的研究工作，在阻变存储器领域取得了一些创新性研究成果。在相关研究领域，近年来主持国家自然科学基金项目3项、甘肃省2020年****基金项目、教育部博士学科点专项科研基金项目1项、中央高校自由探索项目2项，参与国家重点研发计划项目、国家自然科学基金地区科学基金多项，已在Advanced Materials、Advanced Functional Materials、IEEE Electron Device Letters、Applied Physics Letters等国际知名 SCI学术期刊、国际会议上发表相关论文60多篇，他引上千次，其中第一作者、通讯作者身份发表SCI论文30余篇，申请相关专利20余项，参与编写专著1本，参与编写教材2本。2014年在阻变存储器及集成的基础研究方面，作为主要完成人获得北京市科学技术奖二等奖1项。
研究方向
1、新型非挥发性阻变存储器研究；2、高密度存储器件集成研究；3、集成电路；
教学及学生指导情况
承担本科生课程《集成电路分析与设计》、《功率半导体器件》、《文科物理基础》承担研究生课程《现代半导体器件物理》
发表论文及专著
发表文章列表1.Yingtao Li*, Xiaoyan Li, Rongbo Chen, Hong Wang, and Xiaoping Gao, “Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices”, IEEE Transactions on Electron Devices, 65, 5390-5394, 2018.2.Na Bai, Min Xu, Cong Hu, Yaodong Ma, Qi Wang, Deyan He, Jing Qi, Yingtao Li* , “Resistive switching behaviors mediated by grain boundaries in one longitudinal Al/MoS2&PVP/ITO device”, Materials Science in Semiconductor Processing, 91, 246–251, 2019.3.Yingtao Li*, Yang Wang, Chuanbing Chen, Peng Yuan, and Xiaoping Gao, “Research on feasibility of using a Transient Voltage Suppressor as the selection device for bipolar RRAM”, Microelectronic Engineering, 164, 20–22, 2016.4.Yingtao Li*, Rongrong Li, Liping Fu, Xiaoping Gao, Yang Wang, and Chunlan Tao, “Excellent nonlinearity of a selection device based on anti-series connected Zener diodes for ultrahigh-density bipolar RRAM arrays”, Nanotechnology, 26, 425201, 2015.5.Yingtao Li*, Peng Yuan, Liping Fu, Rongrong Li, Xiaoping Gao, and Chunlan Tao, “Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure”, Nanotechnology, 26, 391001, 2015.6.Yingtao Li*, Xiaoping Gao, Liping Fu, Peng Yuan, Hong Wang, and Chunlan Tao, “Improvement of resistive switching fluctuations by using one step lift-off process”, Phys. Status Solidi RRL, 9, 594-596, 2015.7.Yingtao Li*, Rongrong Li, Peng Yuan, Xiaoping Gao, and Enzi Chen, “Low-cost bidirectional selector based on Ti/TiO2/HfO2/TiO2/Ti stack for bipolar RRAM arrays”, Modern Physics Letters B, 29, **, 2015. 8.Yingtao Li*, Qingchun Gong, Rongrong Li, and Xinyu Jiang, “A new bipolar RRAM selector based on anti-parallel connected diodes for crossbar applications”, Nanotechnology, 25,185201, 2014（Research Highlight）.9.Yingtao Li*, Qingchun Gong, and Xinyu Jiang, “Feasibility of Schottky diode as selector for bipolar-type resistive random access memory applications”, Applied Physics Letters, 104, 132105, 2014.10.Yingtao Li*, Liping Fu, Chunlan Tao, Xinyu Jiang, and Pengxiao Sun, “Feasibility study of using a Zener diode as the selection device for bipolar RRAM and WORM memory arrays”, Journal of Physics D: Applied Physics, 47, 025103, 2014.11.Yingtao Li*, Xiaoyi Hu, Rongrong Li, Enzi Chen, Qingchun Gong, and Chunlan Tao, “Oxide based two diodes-one resistor structure for bipolar RRAM crossbar array”, Microelectronic Engineering, 130, 35-39, 2014.12.Yingtao Li*, Xinyu Jiang, and Chunlan Tao, “A self-rectifying bipolar RRAM device based on Ni/HfO2/n+-Si structure”, Modern Physics Letters B, 28, **, 2014.13.Jinfu Ma*, Shenghua Yuan, Shaolin Yang, Hui Lu, Yingtao Li*, “Poly(3,4-ethylenedioxythiophene)/reduced graphene oxide composites as counter electrodes for high efficiency dye-sensitized solar cells”, Applied Surface Science, 440, 8–15, 2018.14.Liping Fu, Yingtao Li*, Genliang Han，Xiaoping Gao, Chuanbing Chen, and Peng Yuan, “Stable resistive switching characteristics of ZrO2-based memory device with low-cost”, Microelectronic Engineering, 172, 26–29, 2017.15.Xiangyu Gao, Jinfu Ma*, Yingtao Li*, Haicheng Wei, “Graphene quantum dots doped PEDOT and its electrocatalytic performance for oxygen reduction reaction”, International Journal of Electrochemical science, 12, 11287–11297, 2017.16.Xiaoping Gao, Liping Fu, Chuanbing Chen, Peng Yuan, and Yingtao Li*, “Self-compliance multilevel storage characteristic in HfO2-based device”, Chinese Physics B, 25 (10), 106102, 2016.17.Yingtao Li, Hangbing Lv, Qi Liu, Shibing Long, Ming Wang, Hongwei Xie, Kangwei Zhang, Zongliang Huo, and Ming Liu*, “Bipolar one diode–one resistor integration for high-density resistive memory applications”, Nanoscale, 5, 4785–4789, 2013.18.Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Ming Wang, Hongwei Xie, Kangwei Zhang, Xiaoyi Yang, and Ming Liu*, “Novel self-compliance bipolar 1D1R memory device for high-density RRAM application”, International Memory Workshop (IMW), May 26-29, 2013, Monterey, CA.19.Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Wei Wang, Qin Wang, Zongliang Huo, Yan Wang, Sen Zhang, Su Liu, and Ming Liu*, “Reset Instability in Cu/ZrO2:Cu/Pt RRAM Device”, IEEE Electron Devices Lett., 32 (3), 363-365, 2011.20.Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Yan Wang, Sen Zhang, Wentai Lian, Ming Wang, Kangwei Zhang, Hongwei Xie, Su Liu, and Ming Liu*, “Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer”, Nanotechnology, 22 (25), 254028, 2011.21.Yingtao Li, Shibing Long, Qi Liu, Hangbing Lv, Su Liu, and Liu Ming*, “An overview of resistive random access memory devices”, Chinese Sci Bull, 56 (28-29), 3072-3078, 2011.22.Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Qin Wang, Yan Wang, Sen Zhang, Su Liu, and Ming Liu*, “Investigation of resistive switching behaviors in WO3-based RRAM devices”, Chinese Physics B, 20 (1), 017305, 2011.23.Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Qin Wang, Yan Wang, Sen Zhang, Su Liu, and Ming Liu*, “Improvement of resistive switching uniformity in TiOx film by nitrogen annealing ”, J. Korean Phys. Soc., 58 (3), L407-L410, 2011.24.Yingtao Li, Shibing Long, Manhong Zhang, Qi Liu, Lubing Shao, Sen Zhang, Yan Wang, Qingyun Zuo, Su Liu, and Ming Liu*, “Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory”, IEEE Electron Devices Lett., 31 (2), 117-119, 2010.25.Yingtao Li, Shibing Long, Qi Liu, Qin Wang, Manghong Zhang, Hangbing Lv, Lubing Shao, Yan Wang, Sen Zhang, Qingyun Zuo, Su Liu, and Ming Liu*, “Nonvolatile multilevel memory effect in Cu/WO3/Pt device structures”, Phys. Status Solidi RRL, 4, 124-126, 2010.26.Yingtao Li, Ming Liu, Shibing Long, Qin Wang, Qi Liu, Sen Zhang, Yan Wang, Qingyun Zuo and Su Liu, “Simulation of retention characteristics for metal nanocrystal nonvolatile memory with a modified direct tunneling model”, ISTC 2009, March 19-21, ShangHai, China, and ECS Transactions, 18 (1) 141-148 (2009). (Oral)27.Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Qin Wang, Yan Wang, Sen Zhang, Wentai Lian, Su Liu, Ming Liu, “A Low-cost Memristor Based on Titanium Oxide ”, ICSICT 2010, Nov. 1-4.28.Hong Wang, Yuanmin Du, Yingtao Li, Bowen Zhu, Wan Ru Leow, Yuangang Li, Jisheng Pan, Tao Wu, and Xiaodong Chen*, “Configurable resistive switching between memory and threshold characteristics for protein-based devices”, Adv. Funct. Mater., 25, 3825–3831, 2015.29.Pengxiao Sun, Nianduan Lu, Ling Li, Yingtao Li, Hong Wang, Hangbing Lv, Qi Liu, Shibing Long, Su Liu, and Ming Liu*, “Thermal crosstalk in 3-dimensional RRAM crossbar array”, Scientific Reports, 5, 13504, 2015.30.Pengxiao Sun, LingLi, NianduanLu, Yingtao Li, MingWang, HongweiXie, SuLiu, and Ming Liu*, “Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory”, Journal of Computational Electronics, 13, 432–438, 2014.31.Hangbing Lv, Yingtao Li, Qi Liu, Shibing Long, Ling Li, and Ming Liu*, “Self-rectifying resistive-switching device with a-Si/WO3 bilayer”, IEEE Electron Device Letters, 34, 229-231, 2013.32.Hongwei Xie, Qi Liu, Yingtao Li, Hangbing Lv, Ming Wang, Kangwei Zhang, Shibing Long, Su Liu*, and Ming Liu, “Effect of low constant current stress treatment on the performance of Cu/ZrO2/Pt resistive switching device”, Semiconductor Science and Technology, 27, 105007, 2012.33.Hongwei Xie, Qi Liu, Yingtao Li, Hangbing Lv, Ming Wang, Xiaoyu Liu, Haitao Sun, Xiaoyi Yang, Shibing Long, Su Liu*, and Ming Liu, “Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM Device”, Semiconductor Science and Technology, 27, 125008, 2012.34.Hangbing Lv, Qi Liu, Yingtao Li, Ming Wang, Xiaoyu Liu, Haitao Sun, Hongwei Xie, Xiaoyi Yang, Zongliang Huo, Shibing Long, and Ming Liu*, “Self-rectifying bistable resistor for advanced memory application”, IEEE International Memory Workshop (IMW), May 26-29, 2013, Monterey, CA.35.Ming Wang, Hangbing Lv, Qi Liu, Yingtao Li, Zhongguang Xu, Shibing Long, Hongwei Xie, Kangwei Zhang, Xiaoyu Liu, Haitao Sun, Xiaoyi Yang, and Ming Liu*, “Investigation of one dimension thickness scaling on Cu/HfOx/Pt resistive switching device performance”, IEEE Electron Device Letters, 33, 1556-1558, 2012.36.Ming Wang, Hangbing Lv, Qi Liu, Yingtao Li, Hongwei Xie, Shibing Long, Kangwei Zhang, Xiaoyu Liu, Haitao Sun, Xiaoyi Yang, and Ming Liu*, “Study of one dimension thickness scaling on the RRAM device performance”, IEEE International Memory Workshop (IMW), May 20-23, 2012, Milan, Italy.37.Ming Liu*, Hangbing Lv, Qi Liu, Yingtao Li, Shibing Long, Haitao Sun, Xiaoyi Yang, Ming Wang, Hongwei Xie, and Xiaoyu Liu, “The unveiling switching mechanism of oxide electrolyte based ReRAM”, IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct. 29-Nov. 1, 2012, Xi’an, China. (Invited)38.Shibing Long, Qi Liu, Hangbing Lv, Yingtao Li, Yan Wang, Sen Zhang, Wentai Lian, Kangwei Zhang, Ming Wang, Hongwei Xie, and Ming Liu*, “Resistive Switching Mechanism of Ag/ZrO2:Cu/Pt memory cell”, Applied Physics A-Materials Science & Processing, 102 (4), pp.915-919, 2011.39.Qi Liu, Shibing Long, Wei Wang, Tanachutiwat Sansiri, Yingtao Li, Qin Wang, Manghong Zhang, Junning Chen, and Ming Liu*, “Low power and highly uniform switching in ZrO2-based ReRAM with a Cu nanocrystal insertion layer”, IEEE Electron Device Letters, 31 (11), 1299-1301, 2010.40.Yan Wang, Qi Liu, Hangbing Lv, Shibing Long, Wei Wang, Yingtao Li, Sen Zhang, Wentai Lian, Jianhong Tang, and Ming Liu*, “Improving the electrical performance of resistive switching memory using doping technology”, Chinese Science Bulletin, 57, 1235-1240, 2012.41.Qi Liu, Jun Sun, Hangbing Lv, Hangbing Lv, Shibing Long, Kuibo Yin, Neng Wan, Yingtao Li, Litao Sun, and Ming Liu*, “Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM”, Advanced Materials, 24, 1844-1849, 2012.42.Jun Sun, Qi Liu, Hongwei Xie, Xing Wu, Feng Xu, Tao Xu, Shibing Long, Hangbing Lv, Yingtao Li, Litao Sun, and Ming Liu*, “In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory”, Applied Physics Letters, 102, 053502, 2013.43.Yan Wang, Qi Liu, Shibing Long, Wei Wang, Qin Wang, Manhong Zhang, Sen Zhang, Yingtao Li, Qingyun Zuo, Jianhong Yang, and Ming Liu, “Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications”, Nanotechnology, 21, 045202, (2010).44.Qingyun Zuo, Shibing Long, Shiqian Yang, Qi Liu, Lubing Shao, Qin Wang, Sen Zhang, Yingtao Li, Yan Wang, Ming Liu, “ZrO2–Based Memory Cell with a Self-rectifying Effect for Crossbar WORM Memory Application”, IEEE Electron Devices Lett., 31 (4), pp. 344-346, (2010).45.Qi Liu, Shibing Long, Wei Wang, Tanachutiwat Sansiri, Yingtao Li, Qin Wang, Manghong Zhang, Junning Chen, Ming Liu, “Low Power and Highly Uniform Switching in ZrO2-Based ReRAM with A Cu Nanocrystal Insertion Layer”, IEEE Electron Devices Lett., 31 (11), pp. 1299-1301, (2010).参编专著《新型阻变存储技术》，科学出版社，2014年，ISBN 978-7-03-041829-6,独立撰写第8章阻变存储器集成。
项目成果
主持或参与的科研项目（1）国家自然科学基金面上项目：(**)，主持，在研；（2）中央高校自由探索项目：（lzujbky-2018-114）主持，在研；（3）国家重点研发计划项目：(2017YFB**)，参加，在研，主持本单位部分；（4）国家自然科学基金地区科学基金项目：(**)，参加，在研，主持本单位部分；（5）国家自然科学基金面上项目：(**)，主持，结题；（6）国家自然科学基金青年基金项目：(**)，主持，结题；（7）教育部博士学科点专项科研基金项目：(20**0)，主持，结题。
荣誉获奖
阻变存储器及集成的基础研究，北京市科学技术奖二等奖，2014年。