关键词: 带间跃迁/
p-n结/
载流子输运/
光致发光
English Abstract
Anomalous light-to-electricity conversion of low dimensional semiconductor in p-n junction and interband transition quantum well infrared detector
Liu Jie1,2,Wang Lu1,
Sun Ling1,2,
Wang Wen-Qi1,2,
Wu Hai-Yan1,2,
Jiang Yang1,
Ma Zi-Guang1,
Wang Wen-Xin1,
Jia Hai-Qiang1,
Chen Hong1
1.Key Laboratory for Renewable Energy, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2.University of Chinese Academy of Sciences, Beijing 100049, China
Fund Project:Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, 11374340, 11474205) and the National Key RD Program of China (Grant No. 2016YFB0400302).Received Date:03 April 2018
Accepted Date:03 May 2018
Published Online:20 June 2019
Abstract:Recently, high localized carrier extraction efficiency and enhanced absorption coefficient were observed in low-dimensional semiconductor within a p-n junction. In this work, we report the discovery and verification of the phenomenon, and the performance of the first photon detector based on the interband transition of strained InGaAs/GaAs quantum wells (QWs). By introducing the resonant excitation photoluminescence, the same phenomena are observed in several different material systems. More than 95% of the photoexcited carriers escape from InGaN/GaN QWs, and 87.3% in InGaAs/GaAs QWs and 88% in InAs/GaAs quantum dots are observed. The external quantum efficiency of the device is measured to be 31% by using an absorption layer with only 100 nm effective thickness in the case without an anti-reflection layer. Using such a high value of quantum efficiency, an absorption coefficient of 3.7104 cm-1 is calculated, which is obviously larger than previously reported values. The results here demonstrate the possibility of fabricating high-performance and low-cost infrared photon detectors.
Keywords: interband transition/
p-n junctions/
carrier transportation/
photoluminescence
