关键词: 拓扑半金属/
单晶生长/
助熔剂法/
气相传输法
English Abstract
Research progress of single crystal growth for topological semimetals
Yi Chang-Jiang1,2,Wang Le1,2,
Feng Zi-Li1,2,
Yang Meng1,2,
Yan Da-Yu1,2,
Wang Cui-Xiang1,2,
Shi You-Guo1,2
1.Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2.School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
Fund Project:Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0302901, 2016YFA0300604), the National Natural Science Foundation of China (Grant Nos. 11774399, 11474330), the Strategic Priority Research Program (B) of Chinese Academy of Sciences (Grant No. XDB07020100), and the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH043).Received Date:24 April 2018
Accepted Date:08 May 2018
Published Online:20 June 2019
Abstract:Topological semimetals have attracted much attention and become a hot subject in condensed matter physics, and single crystal growth is the basis of the physical investigation on these materials. At present, the research of topological materials has formed a cooperation circle:presenting materials by theoretical calculation; single crystal growth; verification by experiments on single crystals. Single crystal growth has become a bridge between theory and experiment. Here in this paper, we introduce the single crystal growth of the topological semimetals presented in recent years, including topological Dirac semimetals, Weyl semimetals, Node-Line semimetals and other new classes of topological materials. The detailed growth methods are summarized in this paper for each material.
Keywords: topological semimetals/
single crystals growth/
flux method/
vapor transport method
