李昂，副研究员，博士生导师。
2014年获得意大利比萨高等师范学校理学博士学位，凝聚态物理专业优秀博士论文。2013年起在荷兰埃因霍温理工大学应用物理系开展博士后研究工作，同时被聘为代尔伏特理工大学博士后研究员和飞利浦创新中心客座研究员。2016年入职北京工业大学。任中国电子显微镜学电子光学与仪器专业委员会副主任，中国电子显微镜学会理事。是Chem. Mater.、ACS Appl. Mater. Interfaces、Semicond. Sci. Technol. J. Alloy Compd.等SCI期刊审稿人。
研究方向：
原位电子显微学(in situ TEM)；纳米半导体生长(Semiconductor Growth)
近期主持或参与科研项目：
1. 国家自然科学面上基金：一维III-V族半导体纳米线在二维材料表面范德华外延生长及机理的研究(主持)
2. 北京市自然科学基金重点项目：气氛环境下极小尺寸材料表面和界面原子与气体作用机理的原位动态研究(课题负责人)
3. 中国人民共和国科技部国家重点研发计划-政府间合作项目：电子化学和表面催化在能量转化中应用(课题负责人)
4. 国家自然科学基金面上项目：SnSe基单晶热电材料缺陷与费米能级位置调控的研究(参与)
近期主要工作：
1. O. Arif, V. Zannier, A. Li, F. Rossi, D. Ercolani, F. Beltram, L. Sorba. Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires. Crystal Growth & Design 2020, 20 (2), 1088-1096. (Semiconductor Growth)
2. C. Wang, A. Li, C. Li, S. Zhang, H. Li, X. Zhou, L. Hu, Y. Feng, K. Wang, Z. Zhu, R. Shao, Y. Chen, P. Gao, S. Mao, J. Huang, Z. Zhang, X. Han. Ultrahigh Photocatalytic Rate at a Single-Metal-Atom-Oxide. Advanced Materials 2020, 80: 547-570. (in situ TEM)
3. J. Ridderbos, M. Brauns, F.K. De Vries, J. Shen, A. Li, S. K?lling, M. A Verheijen, A. Brinkman, W.G. Van Der Wiel, E.P.A.M. Bakkers, F.A. Zwanenburg. Hard Superconducting Gap and Diffusion-Induced Superconductors in Ge–Si Nanowires. Nano letters 2020, 20 (1), 122-130. (Semiconductor Growth)
4. Y. Chen, S. Ji, W. Sun, Y. Lei, Q. Wang, A. Li, W. Chen, G. Zhou, Z. Zhang, Y. Wang, L. Zheng, Q. Zhang, L. Gu, X. Han, D. Wang, Y. Li. Engineering the Atomic Interface with Single Platinum Atoms for Enhanced Photocatalytic Hydrogen Production. Angewandte Chemie International Edition 2020, 59 (3), 1295-1301. (in situ TEM)
5. Y. Chen, F. Xue, C. Wang, X. Li, Q. Deng, X. Yang, H. Long, W. Li, L. Yang, A. Li. Effect of Cr on the microstructure and oxidation properties of Co-Al-W superalloys studied by in situ environmental TEM. Corrosion Science 2019, 161, 108179. (in situ TEM)
6. R. Jin, M. Peng, A. Li, Y. Deng, Z. Jia, F. Huang, Y. Ling, F. Yang, H. Fu, J. Xie, X. Han, D. Xiao, Z. Jiang, H. Liu, D. Ma. Low Temperature Oxidation of Ethane to Oxygenates by Oxygen over Iridium-Cluster Catalysts. American Chemical Society 2019, 141 (48), 18921-18925. (in situ TEM)
7. E. Zhang, T. Wang, K. Yu, J. Liu, W. Chen, A. Li, H. Rong, R. Lin, S. Ji, X. Zheng, Y. Wang, L. Zheng, C. Chen, D. Wang, J. Zhang, Y. Li. Bismuth Single Atoms Resulting from Transformation of Metal–Organic Frameworks and Their Use as Electrocatalysts for CO2 Reduction. American Chemical Society 2019, 141 (42), 16569-16573. (in situ TEM)
8. S. Assali, M. Albani, R. Bergamaschini, M.A. Verheijen, A. Li, S. K?lling, L. Gagliano, E.P.A.M. Bakkers, L. Miglio. Strain engineering in Ge/GeSn core/shell nanowires, Applied Physics Letters 2019, 115 (11), 113102. (Semiconductor Growth)
9. J. Ridderbos, M. Brauns, A. Li, E.P.A.M. Bakkers, A. Brinkman, W.G. Van Der Wiel, F.A. Zwanenburg. Multiple Andreev reflections and Shapiro steps in a Ge-Si nanowire Josephson junction. Physical Review Materials 2019, 3 (8), 084803. (Semiconductor Growth)
10. S. Battiato, S. Wu, V. Zannier, A. Bertoni, G. Goldoni, A. Li, S. Xiao, X. D. Han, F. Beltram, L. Sorba, X. Xu, F. Rossella. Polychromatic emission in a wide energy range from InP-InAs-InP multi-shell nanowires. Nanotechnology 2019, 30 (19). (Semiconductor Growth)
11. K. Wang, X. Xu, L. Lu, A. Li, X. Han, Y. Wu, J. Miao, Y. Jiang. Magnetically recoverable Ag/Bi₂Fe₄O₉ nanoparticles as a visible-light-driven photocatalyst. Chemical Physics Letters 2019, 715, 129-133. (in situ TEM)
12. R. Wang, A. Li, T. Huang, B. Zhang, K. Peng, H. Yang, X. Lu, X. Zhou, X. Han, G. Wang. Enhanced thermoelectric performance in Cu₂GeSe₃ via (Ag, Ga)-co-doping on cation sites. Journal of Alloys and Compounds 2018, 769, 218-225. (in situ TEM)
13. J. Xie, R. Jin, A. Li, Y. Bi, Q. Ruan, Y. Deng, Y. Zhang, S. Yao, G. Sankar, D. Ma, J. Tang. Highly selective oxidation of methane to methanol at ambient conditions by titanium dioxide-supported iron species. Nature Catalysis 2018, 1 (11), 889-896. (in situ TEM)
14. J. Ridderbos, M. Brauns, J. Shen, F.K. de Vries, A. Li, E.P.A.M. Bakkers, A. Brinkman, F.A. Zwanenburg. Josephson Effect in a Few-Hole Quantum Dot. Advanced materials 2018, 30 (44), **. (Semiconductor Growth)
15. X. Wang, H. Xiao, A. Li, Z. Li, S. Liu, Q. Zhang, Y. Gong, L. Zheng, Y. Zhu, C. Chen, D. Wang, Q. Peng, L. Gu, X. Han, J. Li, Y. Li. Constructing NiCo/Fe₃O₄ Heteroparticles within MOF-74 for Efficient Oxygen Evolution Reactions. Journal of the American Chemical Society 2018 140, (45), 15336-15341. (in situ TEM)
16. F.K. de Vries, J. Shen, R.J. Skolasinski, M.P. Nowak, D. Varjas, L. Wang, M. Wimmer, J. Ridderbos, F. A Zwanenburg, A. Li, S. Koelling, M.A. Verheijen, E.P.A.M. Bakkers, L.P. Kouwenhoven. Spin-Orbit Interaction and Induced Superconductivity in a One-Dimensional Hole Gas. Nano letters 2018, 18 (10), 6483-6488. (Semiconductor Growth)
17. S. Wei, A. Li, J.-C. Liu, Z. Li, W. Chen, Y. Gong, Q. Zhang, W.-C. Cheong, Y. Wang, L. Zheng, H. Xiao, C. Chen, D. Wang, Q. Peng, L. Gu, X. Han, J. Li, Y. Li. Direct observation of noble metal nanoparticles transforming to thermally stable single atoms. Nature nanotechnology 2018, 13 (9), 856-861. (in situ TEM)
18. K. Peng, B. Zhang, H. Wu, X. Cao, A. Li, D. Yang, X. Lu, G. Wang, X. Han, C. Uher, X. Zhou. Ultra-high average figure of merit in synergistic band engineered Sn_xNa_1-xSe_0.9S_0.1 single crystals. Materials Today 2018, 21 (5), 501-50. (in situ TEM)
19. S. Conesa-Boj, A. Li, S. Koelling, M. Brauns, J. Ridderbos, T.T. Nguyen, M.A. Verheijen, P.M. Koenraad, F.A. Zwanenburg, E.P.A.M. Bakkers. Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires. Nano letters 2017, 17 (4), 2259-2264. (Semiconductor Growth)
20. S. Assali, A. Dijkstra, A. Li, S. Koelling, M.A. Verheijen, L. Gagliano, N. Von Den Driesch, D. Buca, P.M. Koenraad, J.E.M. Haverkort, E.P.A.M. Bakkers. Growth and Optical Properties of Direct Band Gap Ge/Ge_0.87Sn_0.13 Core/Shell Nanowire Arrays. Nano letters 2017, 17 (3), 1538-1544. (Semiconductor Growth)
21. S. Koelling, A. Li, A. Cavalli, S. Assali, D. Car, S. Gazibegovic, E.P.A.M. Bakkers, P.M. Koenraad. Atom-by-atom analysis of semiconductor nanowires with parts per million sensitivity. Nano letters 2017, 17 (2), 599-605. (Semiconductor Growth)
22. B. Zhang, K. Peng, X. Sha, A. Li, X. Zhou, Y. Chen, Q.S. Deng, D. Yang, E. Ma, X. Han. A second amorphous layer underneath surface oxide. Microscopy and Microanalysis 2017, 23 (1), 173-178. (in situ TEM)
五、联系方式:
Email: ang.li@bjut.edu.cn