简介：
从事微纳加工、阻变存储器、超宽禁带半导体器件领域的研究。IEEE EDL/TED、Adv. Mater.等多种国际著名学术期刊的审稿人。主持国家自然科学基金、科技部（863、973、重大专项、重点研发计划）、中科院等资助科研项目15项。在IEEE EDL等国际学术期刊和会议上发表论文100余篇，SCI他引3000余次，H因子30，2篇第一作者IEEE EDL论文入选ESI高引论文（累计引用居前1%的论文）。获得/申请专利100余项，其中9项转移给国内最大的集成电路制造企业中芯国际，74项授权/受理发明专利许可给武汉新芯。
荣誉：
2018年，中国科学院杰出科技成就奖，第3完成人
2016年，国家自然科学二等奖，第4完成人
2013年，国家技术发明二等奖，第6完成人
2017年，中国科学院创新交叉团队
2013年，国家自然科学基金优秀青年科学基金
论文：
Qiming He, Wenxiang Mu, Bo Fu, Zhitai Jia, Shibing Long*, Zhaoan Yu, Zhihong Yao, Wei Wang, Hang Dong, Yuan Qin, Guangzhong Jian, Ying Zhang, Huiwen Xue, Hangbing Lv, Qi Liu, Minghua Tang, Xutang Tao*, and Ming Liu*. Schottky Barrier Rectifier Based on (100) β-Ga2O3 and its DC and AC Characteristics. IEEE Electron Device Letters, 2018, 39(4), 556-559.
Yuanjie Lv, Xingye Zhou*, Shibing Long*, Xubo Song, Yuangang Wang, Shixiong Liang, Zezhao He, Tingting Han, Xin Tan, Zhihong Feng, Hang Dong, Xuanze Zhou, Yangtong Yu, Shujun Cai, Member, IEEE, Ming Liu. Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2. IEEE Electron Device Letters, 2018, 39. DOI: 10.1109/LED.2018.**
Qiming He, Wenxiang Mu, Hang Dong, Shibing Long*, Zhitai Jia, Hangbing Lv, Qiu Liu, Minghua Tang, Xutang Tao* and Ming Liu. Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics. Applied Physics Letters, 2017, 110, 093503.
Yu Li, Shibing Long*, Qi Liu, Hangbing Lv, and Ming Liu*. Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two-dimensional layered materials. Small, 2017, 13(35), **.
Shibing Long, Xiaojuan Lian, Tianchun Ye, Carlo Cagli, Luca Perniola, Enrique Miranda, Ming Liu, and Jordi Su?é. Cycle-to-cycle intrinsic RESET statistics in HfO2-based unipolar RRAM devices. IEEE Electron Device Letters, 2013, 34(5), 623-625.
Shibing Long, Xiaojuan Lian, Carlo Cagli, Luca Perniola, Enrique Miranda, Ming Liu, and Jordi Su?é. A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown. IEEE Electron Device Letters, 2013, 34(8), 999-1001.