简介：
孙海定博士现任中国科大微电子学院特任研究员，博士生导师，IEEE Senior Member。毕业于美国波士顿大学，博士期间师从氮化物半导体分子束外延（MBE）奠基人Theodore D. Moustakas教授，长期致力于MBE/MOCVD宽禁带氮化物和氧化物半导体外延技术及紫外光电器件设计与工艺的研究。主要研究半导体材料外延技术, 器件设计与工艺制造, 器件光和电性能表征与物理机制，涵盖光电子（LED, laser, photodetector等）和电力电子功率器件（MOSFET, HEMT, SBD等）。同时包括低维材料与器件（纳米线，量子点），二维/三维新型半导体异质结的材料生长和电子输运特性研究。并与工业界紧密合作（欧司朗OSRAM等），部分技术实现产业化。近五年来在光电材料和器件领域重要期刊，如Adv. Funct. Mater., ACS Photonics, Optica, Nano Energy, IEEE Electron Device Lett., Appl. Phys. Lett., Opt. Express, Nanoscale等发表47篇论文（其中一作20篇，通讯作者9篇）。申请美国专利5项，国际专利4项，中国专利6项。在国际会议上做口头报告42次（8次特邀报告）。受邀撰写ELSEVIER出版社《Nanoscale Semiconductor Lasers》书中题为“Ultraviolet Quantum Well Lasers”和人民邮电出版社出版的《可见光通信新型发光器件原理与应用》书中题为“非极性和半极性面氮化镓激光器”的两个章节，均已经出版。相关工作受到同行和业界广泛关注，被国际科技媒体报道100余次，包括半导体行业权威杂志《Compound Semiconductor》（10次）、《Semiconductor Today》（5次）、欧洲最大电子工程杂志eeNews Europe（7次）、美国主流科技媒体Phys.org（7次），科研成果多次以周刊/月刊亮点新闻专题报道。受邀长期担任多个国际会议的分会联席主席，Journal of Electronic Packaging等SCI期刊客座编辑（2019，Guest Editor），Advanced Materials等二十多家重要期刊审稿人。2014年在波士顿创立美国太阳能公司CloudSolar，被华尔街日报，波士顿环球时报，美国国家广播电台等报道。

荣誉及学术：
1) Co-Chair, Photonics and Optics Track, InterPACK 2019
2) 新创****，2019
3) IEEE Senior Member, 2018
4) Outstanding Reviewer Award forJournal of Physics D: Applied Physics,2016
5) 一作文章入选Nanoscale封面文章, 2017
6) Second Prize, Microscopy Society of America Student Poster Award, USA, 2013
招生对象：本科大三大四（指导暑期研究/毕业设计，保研/考研学生），及硕士/博士/博士后
背景：电子，物理，材料，光电，化学等对半导体材料和器件感兴趣的同学。


论文列举(详细列表请点击上面个人主页)：

33.Zhongjie Ren, H. Sun* et al., “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: A review”,Journal of Physics D: Applied Physics, 2 019, DOI: 10.1088/1361-6463/ab4d7b
32.H. Sun* et al., “Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate”, Advanced Functional Materials, 2019 DOI: 10.1002/adfm.
31.H. Yu, H. Sun* et al.,“Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with Al-composition graded quantum barrier, Optics Express, 27(20), A1544-A1553, 2019
30.Xiaohu Hou; H. Sun*;Shibing Long ; Ming Liu et al., “Ultrahigh-Performance Solar-Blind Photodetector Based on α-Phase-Dominated Ga2O3 Film with Record Low Dark Current of 81 fA IEEE Electron Device Letters, 40, 1483, 2019. (Highlight on IEEE EDL Journal Cover and Editors’ Picks Article)
29.Yuan Qin; H. Sun*; Shibing Long; Ming Liu et al., “High-Performance Metal-Organic Chemical Vapor Deposition grown ε-Ga2O3 Solar-Blind Photodetector with Asymmetric Schottky Electrodes IEEE Electron Device Letters, 40, 1475, 2019.
28.S. Wang, Q. Chen, J. Dai, Z. Zhang, H. Sun,C. Chen, “Monolithic integration of deep ultraviolet LED with a multiplicative photoelectric converter”. Nano Energy, 104181, 2019 DOI: 10.1016/j.nanoen.2019.104181
27.W. Guo, H. Sun,J. Ye et al, Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures, Optica6(8), 1058 (2019).
26.M.Garg, A. Kumar, H. Sun,and R. Singh et al, Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization”, Journal of Alloys and Compounds, 806, 852-857(2019)
25. H. Yu,H. Sun* et al.,Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED having Graded Quantum Well Structure, IEEEPhotonics Journal,1-3, 2019, DOI:10.1109/JPHOT.2019.**
24. H. Dong, S. Long,H. Sun,et al.,Fast Switching β-Ga2O3 Power MOSFET with a Trench-Gate Structure, IEEE Electron Device Letters (accepted, 2019)
23. G. Yang, Q. Chen,H. Sun,et al.,Enhanced Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Incorporating High-Reflective n-Type Electrode Made of Cr/Al, IEEE Transactions on Electron Devices PP(99):1-5, May 2019DOI: 10.1109/TED.2019.**
22. F. Wu, H. Xia, H. Sun,et al.,AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,Advanced Functional Materials2019, DOI: 10.1002/adfm.
21. H. Wang, J. Dai, H. Sun*, et al.,Phosphor Glass-Coated Sapphire With Moth-Eye Microstructures for Ultraviolet-Excited White Light-Emitting Diodes, IEEE Transactions on Electron Devices PP(99):1-5, May 2019 DOI: 10.1109/TED.2019.**
20.M. Garg,T. R. Naik, R. Pathak, V. R. Rao, C. Liao, K. Li, H. Sun, X. Li, and R. Singh,Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-porphyrin based organic molecules, Journal of Applied Physics124, 195702 (2018);
19.H. Sunet. al., “Recent Advances in III-Nitride Nanowire Light Emitters on Foreign Substrates - Towards Flexible Photonics,Phys. Status Solidi A, 216(2), **, (2019)(Feature Article)
18.W. Guo*,H. Sun*(co-first-author),et al., Lateral-Polarity-Structure of AlGaN Quantum Wells: A Promising Approach for Enhancing the Ultraviolet Luminescence,Advanced Functional Materials,** (2018).Featured in Compound Semiconductor
17.H. Sun,et al., Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes,ACS Photonics,5(3), 964 (2018).Featured in eeNews Europe, eeNews LED lighting, Phys.org, Nanowerk, EurekAlert(AAAS), Compound Semiconductor, Science Newsline
16.H. Sun, et al.,Graded-Index Separated Confinement Heterostructure AlGaN Nanowires: Towards Ultraviolet Laser Diodes Implementation,ACS Photonics,5(8), 3305, (2018).Featured in Semiconductor Today
15.H. Sun,et al., HCl Flow-Induced Phase Change of α-, β- and ε-Ga2O3 Films Grown by MOCVD,Crystal Growth & Design,18(4), 2370-2376 (2018).Featured in Compound Semiconductor
14.H. Sun,et al., “Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures,”Applied Physics Express, 11, 011001 (2018).
13.H. Sun,et al., “Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application,”Applied Surface Science, 458, 949 (2018).
12.B. Janjua*,H. Sun* (co-first-author), et al., “Self-planarized quantum-disk nanowire ultraviolet-B emitter using pendeo-epitaxy”,Nanoscale (Cover Article), 9, 7805(2017).Featured in Compound Semiconductor, EE Times Europe, eeNews Europe,中国半导体照明
11.B. Janjua*,H. Sun* (co-first-author), et al., “Droop-Free AlxGa1-xN/AlyGa1-yN Quantum-Disks-in-Nanowires Ultraviolet LED emitting at 337 nm on Metal/Silicon substrates,”Optics Express,25, 1381(2017).Featured in Compound Semiconductor, EE Times Europe
10.H. Sun,et al.,“Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction,”Applied Physics Letters,111, 122106 (2017).Featured in Phys.Org, AZO Materials, Nanowerk, Semiconductor Today
9.H. Sun,et al., Influence of TMAl preflow on AlN epitaxy on sapphire,Applied Physics Letters110, 192106 (2017).Featured in Compound Semiconductor
8.H. Sun,et al., “Valence and conduction band offsets of β-Ga2O3/AlN heterojunction,”Applied Physics Letters111, 162105 (2017).
7.H. Sun,et al., “Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate,”Journal of Physics D: Applied Physics,50, 395101 (2017).
6.H. Sun,J. Yin, E. F. Pecora, L. Dal Negro, R. Paiella, T. D. Moustakas, ” Deep UV emitting AlGaN multiple quantum well graded-index separate-confinement heterostructures grown by molecular beam epitaxy on SiC substrates,”IEEE Photonics Journal, 9(4), 1 (2017).
5.H. Sun,A. Piquette, M. Raukas and T. D. Moustakas, Enhancement of Yellow Light Extraction Efficiency of Y3Al5O12:Ce3+Ceramic Converters Using a 2-D TiO2Hexagonal-Lattice Nanocylinder Photonic Crystal Layer,IEEE Photonics Journal, 8, 1(2016).
4.H. Sun,J. Woodward, E. F. Pecora,D. Smith, L. D. Negro, T. D. Moustakas, Effect of Indium in AlGaN/AlGaN MQWs for the development of deep UV laser structures in the form of graded-index seperate confinement heterostructure(GRINSCH),”Phys. Status Solidi A,213(5), 1165 (2016).
3.E. F. Pecora,*,H. Sun* (co-first-author), L. D. Negro, T. D. Moustakas, “Deep UV optical gain on AlGaN-based GRINSCH structure”,Optical Materials Express,5, 4 (2015).
2.H. Sunand T. D. Moustakas, “UV emitters based on an AlGaN p-n junction in the form of GRINSCH”,Applied Physics Express,7,012104 (2014).
1.H. Sun, J. Woodward, J. Yin, A. Moldawer, E. F. Pecora, A. Yu. Nikiforov, L. Dal Negro, R. Paiella, K. Ludwig Jr., D. J. Smith, T. D. Moustakas, “Development of AlGaN-based GRINSCH deep UV emitters by molecular beam epitaxy”,Journal of Vacuum Science Technology B, 31, 03C117 (2013). (Rank #2 in May 2013,top 20 most read articlesof JVSTB)
国际合作：
Prof. Changqing Chen, Prof. Jiangnan Dai from Huazhong University of Science and Technology, Wuhan, China.
Prof. Boon S. Ooi, Tien Khee Ng, Kazuhiro Ohkawa from KAUST, Saudi Arabia
Prof. Songrui Zhao from McGill University, Canada
Prof. Theodore D. Moustakas from Boston University, USA
Prof. Russell D. Dupuis from Georgia Institute of Technology, USA