赵丽霞


女
教授
博导

招生专业：电气工程（学硕、专硕）
研究方向：宽带隙半导体器件、可靠性及失效机理
联系方式：lxzhao@semi.ac.cn

个人简介——————————————————————————————
天津工业大学电气工程与自动化学院教授，博士生导师，中国科学院半导体研究所兼职研究员。2005年于英国诺丁汉大学物理天文学院获得哲学博士学位，随后到英国剑桥大学材料冶金学院GaN研究中心做博士后，2007至2009年初在英国FORGE-EUROPA工作，2009年5月加入中国科学院半导体研究所，同年入选中国科学院第一届“引进杰出技术人才”计划，是科学院青促会首批会员，2020年获得中国电子学会”优秀科研工作者”荣誉称号。2020年9月加入天津工业大学。
长期从事氮化物半导体器件及可靠性和失效机理方面的研究。先后主持承担科技部、国家自然科学基金委及科学院等科研项目14项。发表文章100余篇，迄今文章累计被引用2300多次；已授权发明专利21项，包括1项国际专利；负责起草国家标准5项，目前作为项目负责人正在制定一项国际标准。近五年受邀做大会/邀请报告20余次；当前是中国国际半导体照明论坛组委会委员、二次离子质谱学会议组织委员会委员和全国微束分析标准化技术委员会表面化学分析分技术委员会委员。

近三年主要学术论文 —————————————————————————
[1]“The influence of point defects on AlGaN-based deep ultraviolet LEDs,”Z. H. Ma, A. Almalki, X. Yang, X. Wu, X. Xi, J. Li, S. Lin, X. D. Li, S. Alotaibi, M. A. Huwayz, M. Henini and L. X. Zhao*, Journal of Alloys and Compounds，2020，845，156177.
[2]“Controllable fabrication of lateral periodic nanoporous GaN and its enhanced photocatalytic water splitting performance”, X. D. Li, C. Yang, J. Li, X. Xi, Z. H. Ma, S. Lin, L. X. Zhao*, Applied Surface Science, 2020，526，146618.
[3]“Optical and frequency degradation behavior of GaN-based micro-LEDs for visible light communication,”Z. H. Ma, H. C. Cao, S. Lin, X. D. Li, X. Xi, J. Li, L. X. Zhao*, Optics Express, 2020,28(9), 12795.
[4]“High responsivity and wavelength selectivity of GaN-Based resonant cavity photodiodes”, J. Li, C. Yang, L. Liu, H. C. Cao, S. Lin, X. Xi, X. D. Li, Z. H. Ma, K. Y. Wang, A. Patanè, L. X. Zhao*, Adv. Optical Mater.，2020, **.
[5]“Ultra-high sensitivity graphene/nanoporous GaN ultraviolet photodetectors”, J. Li; X. Xi; S. Lin; Z. H. Ma; X. D. Li; L. X. Zhao*, ACS Applied Materials and Interfaces, 2020, 12，11965.
[6]“Ultra-high and fast ultraviolet response photodetectors based on lateral porous GaN/Ag nanowires composite nanostructure”, J. Li, X. Xi, X. D. Li, S. Lin, Z. H. Ma, H. X. Xiu, L. X. Zhao*, Adv. Optical Mater.，2020, **.
[7]“A discussion on mass resolution in secondary ion mass spectrometry”, Z. P. Li*, L.X. Zhao*, B. Xiong, D. Y. Liu, R. L. Fan, L. Z. Cha, Surface and Interface Analysis, 2020，52，249.
[8]“Color converted white light-emitting diodes with 637.6 MHz modulation bandwidth”，H. C. Cao, S. Lin, Z. H. Ma, X. D. Li J. Li, L. X. Zhao*, IEEE Electron. Dev. Lett., 2019, 40, 267.
[9]“Degradation behavior of deep UV-LEDs studied by electro-optical methods and transmission electron microscopy”, H. X. Xiu, Y. Zhang, J. J. Fu, Z. H. Ma, L. X. Zhao*, J. J. Feng*, Current Applied Physics, 2019, 19, 20.
[10]“Degradation and failure mechanism of AlGaN-based UVC-LEDs”, Z. H. Ma, H. C. Cao, S. Lin, X.D. Li, and L. X. Zhao*, Solid State Electronics, 2019, 156, 92.
[11]“Failure mechanism of phosphors in GaN-based white LEDs”, Z. H. Ma, H. C. Cao, X.J. Sun, C. Yang, X. Xi, J. Li, S. Lin and L. X. Zhao*, Physica Status Solidi (a) 2019, 216(6):**.
[12]“Enhanced water splitting performance of GaN nanowires fabricated using Anode Aluminum Oxide templates”, X. Xi, J. Li, Z.H. Ma, X. D. Li, L. X. Zhao*, RSC Advances, 2019, 9, 14937.
[13]“A discussion on mass resolution in secondary ion mass spectrometry”, Z. P. Li, L. X. Zhao*, B. Xiong, D. Y. Liu, R. L. Fan, L. Z. Cha, Surface and Interface Analysis, 2019, 6725.
[14]“Hybrid light emitting diodes based on stable, high brightness all-inorganic CsPbI 3 perovskite nanocrystals and InGaN”, C. X. Zhang, L. Turyanska, H. C. Cao, L. X. Zhao, M. W. Fay, R. Temperton, J. O'shea, N. R Thomas, K. Y. Wang, W. L. Luan, A. Patanè, Nanoscale, 2019, 11, 13450.
[15]“Light modulation and water splitting enhancement using a composite porous GaN structure”，C. Yang, X. Xi, Z. G. Yu, H. C. Cao, J. Li, S. Lin, Z. H. Ma, and L. X. Zhao*，ACS Applied Materials and Interfaces, 2018, 10, 5492.
[16]“Composite degradation model and corresponding failure mechanism for mid-power GaN-based white LEDs” H.C. Cao, Z. H. Ma, B. J. Sun, X. J. Sun, C. Yang, X. D. Li, J. X. Wang, L. X. Zhao*, AIP Advances, 2018, 8, 035108.
[17]“GaN nanocolumns fabricated by self-assembly Ni mask and its enhanced photocatalytic performance in water splitting” X. Xi, C. Yang, H. C. Cao, Z. G. Yu, J. Li, S. Lin, Z. H. Ma, L.X. Zhao*, Applied Surface Science, 2018, 462, 310.
[18]“Modulation and optoelectronic properties of GaN-based light emitting diodes on GaN template”, S. Lin, H. C. Cao, J. Li, X. J. Sun, H. X. Xiu, and L. X. Zhao*, Applied Physics Express, 2018, 11, 122101.
[19]“High-detectivity Ultraviolet Photodetectors based on Laterally Mesoporous GaN”，L. Liu, C. Yang, A. Patanè, Z. G. Yu, F. G. Yan, K. Y. Wang, H. X. Lu, J. M. Li and L. X. Zhao*，Nanoscale, 2017, 9, 8142.
[20]“GaN with laterally aligned nanopores to enhance the water splitting”，C. Yang, L. Liu, S. C. Zhu, Z. G. Yu, X. Xi, S. T. Wu, H. C. Cao, J. M. Li and L. X. Zhao*, J. Phys. Chem. C 2017, 121, 7331.
[21]“Influence of quantum confined Stark effect and carrier localization effect on modulation bandwidth for GaN-based LEDs”，S. C. Zhu, S. Lin, J. Li, H. C. Cao, C. Yang, J.M. Li and L. X. Zhao*，Appl. Phys. Lett.，2017, 111, 171105.
[22]“Enhancing the spontaneous emission rate by modulating carrier distribution in GaN-based surface plasmon light-emitting diodes” S. C. Zhu, Z. G. Yu, L. Liu, C. Yang, H. C. Cao, X. Xi, J. M. Li and L. X. Zhao*, Opt. Express, 2017, 25, 9617.
[23]“Studies of the light output properties for a GaN based blue LED using an electro-optical simulation method”, C. Qian, Y. Li, J. J. Fan, X. J. Fan, J. J. Fu, L. X. Zhao, G. Q. Zhang, Microelectronics Reliability, 2017,74, 173.
[24]“Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures”, F. G. Yan, L. X. Zhao, A. Patane, P. A. Hu, X. Wei, W. G. Luo, D. Zhang, Q. S. Lv, Q. Feng, C. Shen, K. Chang, L. Eaves, K. Y. Wang*, Nanotechnology, 2017, 28, 27LT01.
[25]“Ultraviolet wavelength identification using energy distribution of hot electrons”, Z.G. Yu; L. Liu; K. Y. Wang; J. X. Wang; J. M. Li; L. X. Zhao*, ACS Omega 2017, 2, 3710.
[26]“Controlled synthesis of ZnO nanostructures by electrodeposition without any pretreatment and additive regent”, X. Xi, C. Yang, L. Liu, S. C. Zhu, H. C. Chao, L. X. Zhao*, Journal of New Materials for Electrochemical Systems, 2017, 20, 175.
[27]“Degradation of InGaN/GaN laser diodes investigated by cross-sectional electron beam induced current imaging”，H. Xiu, E. J. Thrush, L. X. Zhao, A. Phillips, C. J. Humphreys, Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLCHINA), 2017, 14th China International Forum on, Pages: 38-44, November 1-3, Beijing，DOI：10.1109/IFWS.2017.**.