西安电子科技大学微电子学院导师教师师资介绍简介-周弘

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基本信息

周弘教授
博导
学科：电子科学与技术　
学院：微电子学院

联系方式
通信地址：陕西省西安市雁塔区太白南路2号微电子学院
电子邮箱：hongzhou@xidian.edu.cn
办公电话：
办公地点：

个人简介
个人简介
XidianUniversity (西安电子科技大学), 微电子学院，中国，教授，2019.3-现在
XidianUniversity (西安电子科技大学), 微电子学院，中国，副教授，2018.3-2019.3
University of California Berkeley (加州大学伯克利分校), 电子工程，美国,博士后, 2017-2018
Purdue University (普渡大学), 电子工程, 美国，博士, 2012-2017
Nanyang Technological University (南洋理工),新加坡，助研 2010-2012
UESTC (电子科技大学),中国，本科, 微电子技术, 2006-2010
科研成果
取得一系列宽禁带半导体GaN、超宽禁带半导体Ga2O3和AlN微波功率与电力电子器件的国际最高指标
入选海外高层次留学归国人员、入选第三批GF青年托举人才
招生计划
半导体器件方向
每年4-5名微固与集工硕士研究生
每年1-2名博士研究生

主要研究方向
1．GaN HEMT and MOSHEMT: DC and RF Power device
2．ALD Dielectric Engineering
3．Negative-Capacitance Field-Effect Transistors
4．Ga2O3 MOSFET
5．Semiconductor Device Fabrication and Characterization

科学研究
目前研究团队承担的科研项目：

学术论文
* Denotes Corresponding Author
加入西电后：
2021年：
1.Progresses in state-of-the-art technologies of Ga2O3 devices (Invited Review)
Chenlu Wang , Jincheng Zhang*, Shengrui Xu, Chunfu Zhang , Qian Feng, Yachao Zhang, Jing Ning , Shenglei Zhao, Hong Zhou*, Yue Hao
Journal of Physics D: Applied Physics ; doi:10.1088/1361-6463/abe158, 2021, Accepted.
2.Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2
Chenlu Wang , Hehe Gong , Weina Lei, Yuncong Cai, Zhuangzhuang Hu , Shengrui Xu, Zhihong Liu , Qian Feng , Hong Zhou*, Jiandong Ye *, Jincheng Zhang*, Rong Zhang, and Yue Hao
IEEE Electron Device Letters, vol. 42, no. 4, pp. 485-488, 2021.
3.β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2
Qinglong Yan, Hehe Gong, Jincheng Zhang, Jiandong Ye, Hong Zhou*, Zhihong Liu, Shengrui Xu, Chenlu Wang, Zhuangzhuang Hu, Qian Feng, Jing Ning, Chunfu Zhang, Peijun Ma, Rong Zhang, and Yue Hao
Applied Physics Letters, vol. 118, pp.122102, 2021.
4.High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process
Zhe Li,Zhaoqing Feng,Yu Xu,Qian Feng,Weidong Zhu,Dazheng Chen,Hong Zhou,Jincheng Zhang,Chunfu Zhang*,Yue Hao
IEEE Electron Device Letters, vol. 42, no. 4, pp. 545-548, 2021.
5.Demonstration of Al0.85Ga0.15N Schottky barrier diode with > 3 kV breakdown voltage and the reverse leakage currents formation mechanism analysis
Jieying Wang, Hong Zhou#, Jincheng Zhang#, Zhihong Liu, Shengrui Xu, Qian Feng, Jing Ning, Chunfu Zhang, Peijun Ma, Jinfeng Zhang and Yue Hao
Applied Physics Letters, vol. 118, pp.173505, 2021.
2020年：
1.Demonstration of a 2 kV Al0.85Ga0.15N Schottky Barrier Diode with Improved On-current and Ideality Factor
Yanni Zhang, Jincheng Zhang*, Zhihong Liu, Shengrui Xu, Kai Cheng, Jing Ning, Chunfu Zhang, Lei Zhang, Peijun Ma, Hong Zhou*, and Yue Hao
IEEE Electron Device Letters, vol. 41, no. 3, pp. 457-460, 2020.
2.Normally-off β-Ga2O3 Power MOSFET with Ferroelectric Charge Storage Gate Stack Structure
Zhaoqing Feng, Xusheng Tian, Zhe Li, Zhuangzhuang Hu, Yanni Zhang, Xuanwu Kang, Jing Ning, Yachao Zhang, Chunfu Zhang, Qian Feng*, Hong Zhou*, Jincheng Zhang*, and Yue Hao
IEEE Electron Device Letters, vol. 41, no. 3, pp. 333-336, 2020.
3.Beveled Fluoride Plasma Treatment for Verticalβ-Ga2O3Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage
Zhuangzhuang Hu , Yuanjie Lv , Chunyong Zhao, Qian Feng , Zhaoqing Feng, Kui Dang , Xusheng Tian, Yachao Zhang, Jing Ning, Hong Zhou , Xuanwu Kang , Jincheng Zhang , and Yue Hao
IEEE Electron Device Letters, vol. 41, no. 3, pp. 441-444, 2020.
4. Lateral β-Ga2O3 MOSFETs with High Power Figure of Merit of 277 MW/cm2
Yuanjie Lv, Hongyu Liu, Xingye Zhou, Yuangang Wang, Xubo Song, Yuncong Cai, Qinglong Yan, Chenlu Wang, Shixiong Liang, Jincheng Zhang, Zhihong Feng, Hong Zhou*, Shujun Cai*, and Yue Hao
IEEE Electron Device Letters, vol. 41, no. 4, pp. 537-540, 2020.
5.Leakage Current Mechanisms of Groove-Type Tungsten-Anode GaN SBDs with Ultra Low Turn-ON Voltage and Low Reverse Current
Yanni Zhang， Jincheng Zhang*, HongZhou*,TaoZhang, Haiyong Wang, Zhaoqing Feng, and Yue Hao
Solid State Electronics, vol. 169, pp. 1-7, 2020
6.Impact of Implanted Edge Termination on Vertical β -Ga?O? Schottky Barrier Diodes Under off-State Stressing
Yanni Zhang ; Jincheng Zhang* ; Zhaoqing Feng ; Zhuangzhuang Hu ; Jiabo Chen ; Kui Dang ; Qinglong Yan ; Pengfei Dong ; Hong Zhou *; Yue Hao
IEEE Transaction on Electron Devices, vol. 47, no. 8, pp. 1-6, 2020.
7.Design and fabrication of field-plated normally off β-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application
Zhaoqing Feng, Yuncong Cai, Zhe Li, Zhuangzhuang Hu, Yanni Zhang, Xing Lu, Xuanwu Kang, Jing Ning, Chunfu Zhang, Qian Feng*, Jincheng Zhang*, Hong Zhou* and Yue Hao
Applied Physics Letters, vol. 116, pp. 243503-1-243503-5, 2020.
8.Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al?O? on a-Plane GaN
Yanni Zhang ; Jincheng Zhang* ; Zhuangzhuang Hu ; Zhaoqing Feng ; Hepeng Zhang ; Shengrui Xu ; Zhihong Liu ; Hong Zhou* ; Yue Hao
IEEE Journal of the Electron Devices Society, vol. 8, pp.970- 975, 2020.
9.Oxygen annealing impact on β-Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density
Yuanjie Lv, Hongyu Liu, Yuangang Wang, Xingchang Fu, Chunlei Ma, Xubo Song, Xingye Zhou, Yanni Zhang, Pengfei Dong, Hanghai Du, Shixiong Liang, Tingting Han, Jincheng Zhang, Zhihong Feng*, Hong Zhou*, Shujun Cai* and Yue Hao
Applied Physics Letters, vol. 117, pp. 133503-1-133503-5, 2020.
10.Demonstration of β−Ga2O3 Junction Barrier Schottky Diodes with a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities
Yuanjie Lv, Yuangang Wang, Xingchang Fu, Shaobo Dun, Zhaofeng Sun, Hongyu Liu, Xingye Zhou, Xubo Song, Kui Dang, Shixiong Liang, Jincheng Zhang, Hong Zhou*, Zhihong Feng*, Shujun Cai*, and Yue Hao
IEEE Transaction on Power Electronics (Letter), Vol. 37, no. XX, 2021.
11.High-Performance β-Ga2O3 Solar-Blind Schottky Barrier Photodiode With Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process
Zhe Li, Yanan Cheng, Yu Xu, Zhuangzhuang Hu, Weidong Zhu, Dazheng Chen, Qian Feng, Hong Zhou, Jincheng Zhang, Chunfu Zhang, Yue Hao
IEEE Electron Device Letters, Vol. 41, No. 12, pp. 1794-1797, Dec. 2020.
2019年：
1. High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination
Yangyang Gao, Ang Li, Qian Feng*, Zhuangzhuang Hu, Zhaoqing Feng, Ke Zhang, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Wenxiang Mu, Zhitai Jia, Jincheng Zhang*, Yue Hao
Nanoscale research letters， vol. 14, no. 1, pp. 8, 2019.
2.Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga 2 O 3 Thin Film
Zhuangzhuang Hu, Qian Feng*, Zhaoqing Feng, Yuncong Cai, Yixian Shen, Guangshuo Yan, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Jincheng Zhang*, Yue Hao
Nanoscale research letters， vol. 14, no. 1, pp. 7, 2019.
3.A review of the most recent progresses of state-of-art gallium oxide power devices (Invited Review)
Hong Zhou, Jincheng Zhang*, Chunfu Zhang, Qian Feng, Shenglei Zhao, Peijun Ma, Yue Hao
Journal of Semiconductors, pp. 1-18, 2019.
4.High performance Lateral GaN Schottky Barrier Diode on Silicon Substrate with Low Turn-on Voltage of 0.31 V, High Breakdown Voltage of 2.65 kV and High Power Figure-of-Merit of 2.65 GW/cm²
Tao Zhang, Jincheng Zhang^*, Hong Zhou^*, Yachao Zhang, Tangsheng Chen, Kai Zhang, Yi Wang, Kui Dang, Zhaoke Bian, Xiaoling Duan, Jing Ning, Shenglei Zhao, and Yue Hao
Applied Physics Express, Vol. 12, pp. 046502, 2019.
5.A >3 kV/2.94 mΩ•cm2 and Low Leakage Current with Low Turn-on Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate with Anode Engineering Technique
Tao Zhang, Jincheng Zhang*, Hong Zhou*, Yi Wang, Tangsheng Chen, Kai Zhang, Yachao Zhang, Kui Dang, Zhaoke Bian, Jinfeng Zhang, Shengrui Xu, Xiaoling Duan, Jing Ning, and Yue Hao
IEEE Electron Device Letters, Vol. 40, no. 10, pp. 1583-1586, 2019.
6.Lateral GaN Schottky Barrier Diode for Wireless High-power Transfer Application with High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration
Kui Dang, Jincheng Zhang*, Hong Zhou*, Shan Ying, Tao Zhang, Jing Ning, Yachao Zhang, Zhaoke Bian, Jiabo Chen, Xiaoling Duan, Shenglei Zhao, Yue Hao
IEEE Transaction on Industrial Electronics, Vol. xx, pp. xx, 2019.
7.A 5.8 GHz High-power and High-efficiency Rectifier Circuit with Lateral GaN Schottky Diode for Wireless Power Transfer
Kui Dang, Jincheng Zhang*, Hong Zhou *, Sen Huang, Tao Zhang, Zhaoke Bian, Yachao Zhang, Xinhua Wang, Shenglei Zhao, Ke Wei, and Yue Hao
IEEE Transaction on Power Electronics (Letter), Vol. 35, no. 3, 2019.
8.High-Performance Vertical β-Ga₂O₃ Schottky Barrier Diode with Implanted Edge Termination
Hong Zhou, Qinglong Yan, Jincheng Zhang*, Yuanjie Lv, Zhihong Liu, Yanni Zhang, Kui Dang, Pengfei Dong, Zhaoqing Feng, Qian Feng, Jing Ning, Chunfu Zhang, Peijun Ma and Yue Hao
IEEE Electron Device Letters, Vol. 40, no. 11, pp. 1788-1791, 2019.
9.A 800 V β-Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistor with High-Power Figure of Merit of Over 86.3 MW/cm2
Z. Feng, Y. Cai, G. Yan, Z. Hu, K. Dang, Y. Zhang, Z. Lu, H. Cheng, X. Lian, Y. Xu, C. Zhang, Q. Feng*, H. Zhou*, J. Zhang* and Y. Hao
Phys. Status Solidi A-Appl. Mat., vol. 216, pp. **-1-**-6, 2019.
2018年：
1. Investigation of temperature dependent electrical characteristics on Au/Ni/β-Ga2O3 Schottky diodes
Ang Li, Qian Feng, Jincheng Zhang, Zhuangzhuang Hu, Zhaoqing Feng, Ke Zhang, Chunfu Zhang, Hong Zhou, and Yue Hao
Superlattices and Microstructures, vol. 119, pp. 212-217, 2018.
2. High-performance quasi-vertical GaN Schottky diode with low turn-on voltage
Zhao-Ke Bian, Hong Zhou, Sheng-Rui Xu, Tao Zhang, Kui Dang, Jia-Bo Chen, Jin-Cheng Zhang, Yue Hao
Superlattices and Microstructures,vol. 125, pp. 295-301, 2018.
3. Integration and Electrical Properties of Ferroelectric Hf0.5Zr0.5O2Thin Film on Bulk-Ga2O3(−201) Substrate for Memory Applications
Wenwu Xiao, Yue Peng, Shuaizhi Zheng, Qian Feng, Hong Zhou, Chunfu Zhang, Jincheng Zhang, Yue Hao, Min Liao, Yichun Zhou
IEEE Electron Device Letters,vol. 39, no. 10, pp. 1504-1507, 2018.
4. Tin-assisted growth of ε-Ga2O3 film and the fabrication of photodetectors on sapphire substrate by PLD
Yuncong Cai, Ke Zhang, Qian Feng, Yan Zuo, Zhuangzhuang Hu, Zhaoqing Feng, Hong Zhou, Xiaoli Lu, Chunfu Zhang, Weihua Tang, Jincheng Zhang, Yue Hao
Optical Materials Express, vol. 8, no. 11, pp. 3506-3517, 2018.
5. Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2
Zhuangzhuang Hu, Hong Zhou*, Qian Feng*, Jincheng Zhang*, Chunfu Zhang, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang GaO, Xuanwu Kang, and Yue Hao
IEEE Electron Device Letters,vol. 39, no. 11, pp. 1564-1567, 2018.
6. A 1.9 kV/2.61 mΩ· cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V
Tao Zhang, Jincheng Zhang*, Hong Zhou*, Tangsheng Chen, Kai Zhang, Zhuangzhuang Hu, Zhaoke Bian, Kui Dang, Yi Wang, Li Zhang, Jing Ning, Peijun Ma, Yue Hao
IEEE Electron Device Letters,vol. 39, no. 10, pp. 1548-1551, 2018.
7. Lateral β-Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV
Zhuangzhuang Hu, Hong Zhou*, Kui Dang, Yuncong Cai, Zhaoqing Feng, Qian Feng, Jincheng Zhang*, Yue Hao,IEEE Journal of the Electron Devices Society, vol. 6, pp. 815 - 820, 2018.
8. AlGaN-Channel Gate Injection Transistor on Silicon Substrate with Adjustable 4 V to 7 V Threshold Voltage and 1.3 kV Breakdown Voltage
Li Zhang, Hong Zhou*, Weihang Zhang, Kui Dang, Taozhang, Peijun Ma, Xiaohua Ma, Jincheng Zhang*, and Yue Hao， IEEE Electron Device Letters,vol. 39, no. 7, pp. 1026-1029, 2018.
加入西电前：
Journals:
(1) Hong Zhou, Kerry Maize, Jinhyun Noh, Ali Shakouri, and Peide D. Ye, “Thermo-dynamic Studies of β-Ga2O3 Nano-membrane Field-effect Transistors on Different Substrates”, ACS Omega, vol. 2, pp. 7723-7729, 2017.
(2) Hong Zhou, Xiabing Lou, Kartnn Sutherlin, Jarren Summers, Kelson D. Chabak, Roy G. Gordon and Peide D. Ye, “DC and RF performance of AlGaN/GaN MOSHEMTs with deep sub-micron T-gates and atomic layer epitaxy MgCaO as gate dielectric”, IEEE Electron Device Letters, vol. 38, pp. 1294-1297, 2017.
(3) Hong Zhou, Xiabing Lou, Sang Bok Kim, Kelson D. Chabak, Roy G. Gordon and Peide D. Ye, “Enhancement-Mode AlGaN/GaN fin-MOSHEMTs on Si Substrate with Atomic Layer Epitaxy MgCaO”, IEEE Electron Device Letters, vol. 38, pp.1294-1297, 2017.
(4) Hong Zhou, Kerry Maize, Gang Qiu, Ali Shakouri, and Peide D. Ye, “β-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5 A/mm and Their Self-heating Effect”, Applied Physics Letters, vol. 111, pp. 092102-1-092102-4, 2017.
(5) Hong Zhou, Mengwei Si, Sami Alghamdi, Gang Qiu, Lingming Yang, and Peide D. Ye, “High Performance Depletion/Enhancement-Mode β-Ga2O3 on Insulator (GOOI) Field-effect Transistors with Record Drain Currents of 600/450 mA/mm”, IEEE Electron Device Letters, vol. 38, pp. 103-105, 2017.
(6) Hong Zhou, Sami Alghamdi, Mengwei Si, Gang Qiu, and Peide D. Ye, “Al2O3/(-201) β-Ga2O3 Interface Improvement through Piranha Pretreatment and Post Deposition Annealing”, IEEE Electron Device Letters, vol. 37, pp. 1411-1414, Oct. 2016.
(7) Hong Zhou, Xiabing Lou, Nathan J. Conrad, Mengwei Si, Heng Wu, Sami Alghamdi, Shiping Guo, Roy G. Gordon, Peide D. Ye, “High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric”, IEEE Electron Device Letters, vol. 37, no. 5, pp. 556-559, May 2016.
(8) Hong Zhou, Yuchen Du, and Peide D. Ye, “Ionic liquid gating on atomic layer deposition passivated GaN: Ultra-high electron density induced high drain current and low contact resistance”, Applied Physics Letters, vol. 108, pp. 202102-1-202102-5, May 2016.
(9) Hong Zhou, Geok Ing Ng, Zhi Hong Liu, and Subranmaniam Arulkumaran, “Side-gate effects on the direct current and radio frequency characteristics of AlGaN/GaN high-electron-mobility transistor on silicon”, Applied Physics Letters, vol. 99, pp. 163505-1-163505-3, Oct. 2011.
(10) Hong Zhou, Geok Ing Ng, Zhi Hong Liu, and Subranmaniam Arulkumaran, “Improved Device Performance by Post-Oxide Annealing in ALD Al2O3/AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor on Si”, Applied Physics Express, vol. 4, pp. 104102-1-104102-3, Sep. 2011.
(11) Hong Zhou, Mengwei Si, Jinhyun Noh, Kerry Maize, S. B. Kim, Roy Gordon, Ali Shakouri, Peide D. Ye, “Hystersis Free Negative Capacitance Hf0.5Zr0.5O2/Mg0.25Ca0.75O/AlGaN/GaN MOSHEMTs on Si Substrate with Dual-Sweep Subthreshold Swing < 60 mV/dec”, IEEE Electron Device Letters, 2017. (Submitted)
(12) Sung-Jae Chang, Hong Zhou, Nanbo Gong, Dongmin Kang, Jongwon Lim, Mengwei Si, Peide D. Ye, T. P. Ma, “Fin-width Effects on Characteristics of InGaAs-Based Vertical Independent Double-Gate Transistor”, IEEE Electron Device Letters, vol. 38, pp. 441-444, 2017.
(13) M. Si, C. J. Su, C. Jiang, N. J. Conrad, H. Zhou, K. D. Maize, G. Qiu, C. T. Wu, A. Shakouri, P. D. Ye, “Steep Slope MoS2 2D Transistors: Negative Capacitance and Negative Differential Resistance”, Nature Nanotechnology, vol.13, no.1, pp. 24-30, 2018..
(14) Mengwei Si, Lingming Yang, Hong Zhou, Peide D. Ye, “β-Ga2O3 Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications”, ACS Omega, vol. 2, pp. 7136-7140, 2017.
(15) Jing-Kai Qin, Gang Qiu, Jie Jian, Hong Zhou, Ling-Ming Yang, Cheng-Yan Xu, Hai-Yan Wang, and Peide D. Ye, “Controlled Growth of Large-Size 2D Selenene and Its Electronic and Optoelectronic Applications”, ACS Nano, vol. 11, pp. 10222-10229, 2017.
(16) Maruf A. Bhuiyan, Hong Zhou, S. J. Chang, Xiabing Lou, Xian Gong, Rong Jiang, Huiqi Gong, En Xia Zhang, C. H. Won, J. W. Lim, J. H. Lee, Roy G. Gordon, Robert A. Reed, D. M. Fleetwood, Peide Ye, and T. P. Ma, “Total Ionizing Dose Responses of GaN-based HEMTs with Different Channel Thicknesses and MOSHEMTs with Epitaxial MgCaO as Gate Dielectric”,IEEE Transactions on Nuclear Science, vol. 65, No. 1, 46-52, 2018.
(17) Xiabing Lou, Hong Zhou, Sang Bok Kim, Sami Alghamdi, Xian Gong, Jun Feng, Peide D. Ye, Roy G. Gordon, “Epitaxial Growth of MgCaO on GaN by Atomic Layer Deposition”, Nano Letters, vol. 16, pp. 7650-7654, 2016.
(18) Gang Qiu, Yuchen Du, Adam Charnas, Hong Zhou, Shengyu Jin, Zhe Luo, Dmitry Zemlyanov, Xianfan Xu, Gary Cheng, Peide D. Ye, “Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5”, Nano Letters, vol. 16, pp. 7364-7369, 2016.
(19) Yuchen Du, Adam T. Neal, Hong Zhou and Peide D. Ye, “Weak Localization in Few-Layer Black Phosphorus”, 2D Materials, vol. 3, pp. 024003, Mar. 2016.
(20) Yuchen Du, Lingming Yang, Hong Zhou and Peide D. Ye, “Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping”, IEEE Electron Device Letters, vol. 37, pp. 429-432, Mar. 2016.
(21) Yuchen Du, Adam T. Neal, Hong Zhou and Peide D. Ye, “Transport studies in 2D transition metal dichalcogenides and black phosphorus”, J. of Physics: Condensed Matter, vol. 28, pp. 263002, May 2016.
(22) Zhihong Liu, Geok Ing Ng, Hong Zhou, Subranmaniam Arulkumaran, “Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation”, Applied Physics Letters, vol. 98, pp. 113506-1-113506-3, Oct. 2011.
(23) Zhihong Liu, Geok Ing Ng, Subranmaniam Arulkumaran, Yrikleterra Manung, Hong Zhou, “Temperature-dependent forward gate current transport in ALD Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor”, Applied Physics Letters, vol. 98, pp. 163105-1-163105-3, April 2011.
(24)Daewoong Kwon, Korok Chatterjee, Ava J Tan, Ajay K Yadav, Hong Zhou, Angada B Sachid, Roberto Dos Reis, Chenming Hu, Sayeef Salahuddin, “Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors”, IEEE Electron Device Letters, vol. 39, no. 2, pp. 300-303, Jan. 2018.
Conferences:
(1) Hong Zhou, Daewoong Kwon, Angada B. Sachid, Yuhung Liao, Korok Chatterjee, Ava J. Tan, Ajay K. Yadav, Chenming Hu, and Sayeef Salahuddin, "Negative Capacitance, n-Channel, Si FinFETs: Bi-directional Sub-60 mV/dec, Negative DIBL, Negative Differential Resistance and Improved Short Channel Effect", VLSI Technology,2018 Symposium on, June, 2018. (Accepted) Oral Presentation.
(2) Hong Zhou, Kerry Maize, Jinhyun Noh, Ali Shakouri, Peide D. Ye, “High Performance Nano-membrane β-Ga2O3 Field-effect Transistors on Sapphire Substrate with Reduced Self-heating Effect”, 223rd ECS meeting, May 2018. Invited Talk.
(3) Hong Zhou, Peide Ye, “Depletion/Enhancement-mode β-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5/1 A/mm and the mechanism of forming Enhancement mode devices”, 48th IEEE Semiconductor Interface Specialists, Conference (SISC), 2017, Oral Presentation.
(4) Hong Zhou Kerry Maize, Jinhyun Noh, and Peide D. Ye, “Minimized Self-heating Effect of β-Ga2O3 Nano-membrane Field-effect Transistors on Sapphire Substrate”, 2nd International Workshop on Gallium Oxide (IWGO), 2017, Oral Presentation.
(5) Hong Zhou and Peide D. Ye, “Depletion/Enhancement-mode β-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5/1 A/mm”, 75th Device Research Conference (DRC), 2017.
(6) Hong Zhou, Mengwei Si, Sami Alghamdi, Gang Qiu, Lingming Yang, and Peide D. Ye, “High performance depletion/enhancement-mode β-Ga2O3 on insulator (GOOI) field-effect-transistor (FET) with record drain current of 600/450 mA/mm”, 47th IEEE Semiconductor Interface Specialists, Conference (SISC), 2016, (Late news) Oral Presentation.
(7) Hong Zhou Xiabing Lou, Kartnn Sutherlin, Jarren Summers, Sang Bok Kim, Kelson D. Chabak, Roy G. Gordon and Peide D. Ye, “DC and RF characterizations of AlGaN/GaN MOSHEMTs with deep sub-micron T-gates and atomic layer epitaxy MgCaO as gate dielectric”, 74th Device Research Conference (DRC), 2016, 1-2, Oral Presentation.
(8) Hong Zhou,, Xiabing Lou, Kartnn Sutherlin, Kelson D. Chabak, Roy G. Gordon and Peide D. Ye, “AlGaN/GaN MOSHEMT with POUT=4.18 W/mm at f=35 GHz Enabled by Atomic Layer Epitaxy MgCaO Dielectric”, International Workshop on Nitride Semiconductors (IWN), 2016, Oral Presentation.
(9) H. Zhou, S. Alghmadi, M. Si, and P. D. Ye, “Determination of Al2O3/β-Ga2O3 Interface Trap Densities Dit Through Photo-Assisted C-V Method”, 2016 Lester Eastman Conference (LEC) on High Performance Devices, 2016.
(10) Hong Zhou Xiabing Lou, Heng Wu, Sami Alghamdi, Shiping Guo, Roy G. Gordon, Peide D. Ye, “InAlN/GaN MOSHEMTs with high drain current of 2.3 A/mm high on/off ratio of 1012 and low SS of 64 mV/dec enabled by atomic-layer-epitaxial MgCaO as gate dielectric”, 73th Device Research Conference (DRC), 2015, 57-58, Oral Presentation.
(11) Hong Zhou, Xiabing Lou, Kelson D. Chabak, R. G. Gordon, and Peide D. Ye, “AlGaN/GaN MOSHEMTs on Si (111) Substrate with High on/off Ratio Low SS and High Off-state Breakdown Voltage Enabled by ALE Single Crystalline MgCaO Gate Dielectric”, 46th IEEE Semiconductor Interface Specialists, Conference (SISC), 2015, Oral Presentation.
(12) Hong Zhou and Peide D. Ye, “Achieving of Ultra High Electron Density on GaN Surface by Ionic Liquid Gating”, 45th IEEE Semiconductor Interface Specialists, Conference (SISC), 2014.
(13) Hong Zhou, Nathan J. Conrad, Shiping Guo, and Peide D. Ye, “Demonstration of InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility-Transistors with ALD La1.8Y0.2O3/Al2O3 as Gate Insulator”, 44th IEEE Semiconductor Interface Specialists, Conference (SISC), 2013.
(14) Kerry Maize, Hong Zhou, Peide D. Ye, and Ali Shakouri, “High resolution thermal imaging of pre-breakdown in power AlGaN/GaN MOSHEMTs”, Reliability Physics Symposium (IRPS), 2017 International, 5C-3.1-5C-3.7.
(15) M. Bhuiyan, H. Zhou, X. Lou, R. Jiang, X. Gong, H. Gong, E. X. Zhang, R. G. Gordon, R. A. Reed, D. M. Fleetwood, P. Ye and T. P. Ma, “Total ionizing dose study of GaN based HEMTs and MOSHEMTs: effects of channel thickness and epitaxial MgCaO as gate dielectric”, IEEE Nuclear and Space Radiation Effects Conference (NSREC), 2017.
(16) LM Yang, G Qiu, MW Si, AR Charnas, CA Milligan, DY Zemlyanov, H Zhou, YC Du, YM Lin, W Tsai, Qing Paduano, M Snure, PD Ye, “Few-layer black phosporous PMOSFETs with BN/Al2O3 bil[ant]ayer gate dielectric: Achieving Ion= 850μA/μm, gm= 340μS/μm, and Rc= 0.58 kΩ• μm”, Electron Devices Meeting (IEDM), 2016 IEEE International, 5.5.1-5.5.4.
(17) M. Bhuiyan, X. Lou, X. Gong, H. Zhou, K. Ni, R. Jiang, H. Gong, E. X. Zhang, R. G. Gordon, R. A. Reed, D. M. Fleetwood, P. Ye and T. P. Ma, “Radiation induced charge trapping in crystalline La2O3 gate dielectric grown on GaAs”, 47th IEEE Semiconductor Interface Specialists, Conference (SISC), 2016.
(18) M. Bhuiyan, H. Zhou, S.-J. Chang, X. Lou, X. Gong, K. Ni, R. Jian, H. Gong, E. X. Zhang, C.-H. Won, R. G. Gordon, J.-W. Lim, J.-H. Lee, R. A. Reed, D. M. Fleetwood, P. Ye and T. P. Ma, “Total ionizing dose effects on GaN-based HEMTs and MOSHEMTs: Effects of channel thickness and crystalline MgCaO as gate dielectric”, 47th IEEE Semiconductor Interface Specialists, Conference (SISC), 2016.
(19) Sami Alghamdi, Hong Zhou, Mengwei Si, and Peide D. Ye, “Comparative study of the Al2O3/β-(-201)Ga2O3 and Al2O3/β-(010)Ga2O3 interfaces through photo-assisted C-V measurements”, 47th IEEE Semiconductor Interface Specialists, Conference (SISC), 2016.
(20) Heng Wu, Wei Luo, Hong Zhou, Mengwei Si, Jinyun Zhang, Peide D. Ye, “First experimental demonstration of Ge 3D FinFET CMOS circuits”, in VLSI Symp. Tech. Dig., Jun. 2015, T58-T59.
(21) Heng Wu, Mengwei Si, Hong Zhou, Peide D. Ye, “Deep sub-100 nm Ge CMOS devices on Si with the recessed S/D and channel”, Electron Devices Meeting (IEDM), 2014 IEEE International, 16.7. 1-16.7. 4.
(22) Adam Neal, Hong Zhou, Yuchen Du, Peide D. Ye, “Superconductivity in Quasi-2D Electron System with Ultra-high Electron Density”, APS March Meeting Abstracts, 52009.
(23) Yuchen Du, Adam Neal, Hong Zhou, Peide D. Ye, “Weak Localization in Bulk Black Phosphorus and Few-Layer Phosphorene”, APS March Meeting Abstracts, L1002.

荣誉获奖

科研团队
先进半导体器件研究课题组，隶属郝跃院士以及张进成教授课题组，主要从事新型半导体器件研究。
研究生：
燕庆龙

课程教学
目前本人承担的教学任务：

课件下载示例

招生要求
每年拟招收2名优秀博士生及5名优秀研究生从事半导体器件的研究探索。

Profile
Dr. Hong Zhou
School of Microelectronics

Contact Information
E-mail: hongzhou@xidian.edu.cn

Introduction
Education Background:
BS: Univ. of Electronic Sci. and Tech. of China, Chengdu, China, 2010.
PHD: Purdue University, West Lafayette, USA, 2017. Advisor: Prof. Peide D. Ye.
Postdoc: Univ. of California Berkeley, Berkeley, USA, 2018, Advisor: Prof. Sayeef Salahuddin & Prof. Chenming Hu

Research Interests
1． GaN and Ga2O3 DC and RF Power Electronics
2． Atomic Layer Deposition (ALD) andAtomic Layer Epitaxy (ALE) Dielectrics
3． Negative Capacitance (NC) Field-Effect Transistors (FETs)
4． 2D MOSFET for Logic and RF Applications
5． Semiconductor Device Fabrication and Characterization

Research
目前研究团队承担的科研项目：

Papers
* Denotes Corresponding Author
After Joining Xidian Univ.：

Before Joining Xidian Univ.：
Journals:
(1) Hong Zhou, Kerry Maize, Jinhyun Noh, Ali Shakouri, and Peide D. Ye, “Thermo-dynamic Studies of β-Ga2O3 Nano-membrane Field-effect Transistors on Different Substrates”,ACS Omega, vol. 2, pp. 7723-7729, 2017.
(2) Hong Zhou, Xiabing Lou, Kartnn Sutherlin, Jarren Summers, Kelson D. Chabak, Roy G. Gordon and Peide D. Ye, “DC and RF performance of AlGaN/GaN MOSHEMTs with deep sub-micron T-gates and atomic layer epitaxy MgCaO as gate dielectric”,IEEE Electron Device Letters, vol. 38, pp. 1294-1297, 2017.
(3) Hong Zhou, Xiabing Lou, Sang Bok Kim, Kelson D. Chabak, Roy G. Gordon and Peide D. Ye, “Enhancement-Mode AlGaN/GaN fin-MOSHEMTs on Si Substrate with Atomic Layer Epitaxy MgCaO”,IEEE Electron Device Letters, vol. 38, pp.1294-1297, 2017.
(4) Hong Zhou, Kerry Maize, Gang Qiu, Ali Shakouri, and Peide D. Ye, “β-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5 A/mm and Their Self-heating Effect”,Applied Physics Letters, vol. 111, pp. 092102-1-092102-4, 2017.
(5) Hong Zhou, Mengwei Si, Sami Alghamdi, Gang Qiu, Lingming Yang, and Peide D. Ye, “High Performance Depletion/Enhancement-Mode β-Ga2O3 on Insulator (GOOI) Field-effect Transistors with Record Drain Currents of 600/450 mA/mm”,IEEE Electron Device Letters, vol. 38, pp. 103-105, 2017.
(6) Hong Zhou, Sami Alghamdi, Mengwei Si, Gang Qiu, and Peide D. Ye, “Al2O3/(-201) β-Ga2O3 Interface Improvement through Piranha Pretreatment and Post Deposition Annealing”,IEEE Electron Device Letters, vol. 37, pp. 1411-1414, Oct. 2016.
(7) Hong Zhou, Xiabing Lou, Nathan J. Conrad, Mengwei Si, Heng Wu, Sami Alghamdi, Shiping Guo, Roy G. Gordon, Peide D. Ye, “High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric”,IEEE Electron Device Letters, vol. 37, no. 5, pp. 556-559, May 2016.
(8) Hong Zhou, Yuchen Du, and Peide D. Ye, “Ionic liquid gating on atomic layer deposition passivated GaN: Ultra-high electron density induced high drain current and low contact resistance”,Applied Physics Letters, vol. 108, pp. 202102-1-202102-5, May 2016.
(9) Hong Zhou, Geok Ing Ng, Zhi Hong Liu, and Subranmaniam Arulkumaran, “Side-gate effects on the direct current and radio frequency characteristics of AlGaN/GaN high-electron-mobility transistor on silicon”,Applied Physics Letters, vol. 99, pp. 163505-1-163505-3, Oct. 2011.
(10) Hong Zhou, Geok Ing Ng, Zhi Hong Liu, and Subranmaniam Arulkumaran, “Improved Device Performance by Post-Oxide Annealing in ALD Al2O3/AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor on Si”,Applied Physics Express, vol. 4, pp. 104102-1-104102-3, Sep. 2011.
(11) Hong Zhou, Mengwei Si, Jinhyun Noh, Kerry Maize, S. B. Kim, Roy Gordon, Ali Shakouri, Peide D. Ye, “Hystersis Free Negative Capacitance Hf0.5Zr0.5O2/Mg0.25Ca0.75O/AlGaN/GaN MOSHEMTs on Si Substrate with Dual-Sweep Subthreshold Swing < 60 mV/dec”,IEEE Electron Device Letters, 2017. (Submitted)
(12) Sung-Jae Chang,Hong Zhou, Nanbo Gong, Dongmin Kang, Jongwon Lim, Mengwei Si, Peide D. Ye, T. P. Ma, “Fin-width Effects on Characteristics of InGaAs-Based Vertical Independent Double-Gate Transistor”,IEEE Electron Device Letters, vol. 38, pp. 441-444, 2017.
(13) M. Si, C. J. Su, C. Jiang, N. J. Conrad,H. Zhou, K. D. Maize, G. Qiu, C. T. Wu, A. Shakouri, P. D. Ye, “Steep Slope MoS2 2D Transistors: Negative Capacitance and Negative Differential Resistance”,Nat. Nano.2017, (Accepted).
(14) Mengwei Si, Lingming Yang,Hong Zhou, Peide D. Ye, “β-Ga2O3 Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications”,ACS Omega, vol. 2, pp. 7136-7140, 2017.
(15) Jing-Kai Qin, Gang Qiu, Jie Jian,Hong Zhou, Ling-Ming Yang, Cheng-Yan Xu, Hai-Yan Wang, and Peide D. Ye, “Controlled Growth of Large-Size 2D Selenene and Its Electronic and Optoelectronic Applications”,ACS Nano, vol. 11, pp. 10222-10229, 2017.
(16) Maruf A. Bhuiyan,Hong Zhou, S. J. Chang, Xiabing Lou, Xian Gong, Rong Jiang, Huiqi Gong, En Xia Zhang, C. H. Won, J. W. Lim, J. H. Lee, Roy G. Gordon, Robert A. Reed, D. M. Fleetwood, Peide Ye, and T. P. Ma, “Total Ionizing Dose Responses of GaN-based HEMTs with Different Channel Thicknesses and MOSHEMTs with Epitaxial MgCaO as Gate Dielectric”,IEEE Trans. Nuclear Sci., 2017. (Accepted)
(17) Xiabing Lou,Hong Zhou, Sang Bok Kim, Sami Alghamdi, Xian Gong, Jun Feng, Peide D. Ye, Roy G. Gordon, “Epitaxial Growth of MgCaO on GaN by Atomic Layer Deposition”,Nano Letters, vol. 16, pp. 7650-7654, 2016.
(18) Gang Qiu, Yuchen Du, Adam Charnas,Hong Zhou, Shengyu Jin, Zhe Luo, Dmitry Zemlyanov, Xianfan Xu, Gary Cheng, Peide D. Ye, “Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5”,Nano Letters, vol. 16, pp. 7364-7369, 2016.
(19) Yuchen Du, Adam T. Neal,Hong Zhouand Peide D. Ye, “Weak Localization in Few-Layer Black Phosphorus”,2D Materials, vol. 3, pp. 024003, Mar. 2016.
(20) Yuchen Du, Lingming Yang,Hong Zhouand Peide D. Ye, “Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping”,IEEE Electron Device Letters, vol. 37, pp. 429-432, Mar. 2016.
(21) Yuchen Du, Adam T. Neal,Hong Zhouand Peide D. Ye, “Transport studies in 2D transition metal dichalcogenides and black phosphorus”,J. of Physics: Condensed Matter, vol. 28, pp. 263002, May 2016.
(22) Zhihong Liu, Geok Ing Ng,Hong Zhou, Subranmaniam Arulkumaran, “Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation”,Applied Physics Letters, vol. 98, pp. 113506-1-113506-3, Oct. 2011.
(23) Zhihong Liu, Geok Ing Ng, Subranmaniam Arulkumaran, Yrikleterra Manung,Hong Zhou, “Temperature-dependent forward gate current transport in ALD Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor”, Applied Physics Letters, vol. 98, pp. 163105-1-163105-3, April 2011.
Conferences:
(1)Hong Zhou, Daewoong Kwon, Angada B. Sachid, Yuhung Liao, Korok Chatterjee, Ava J. Tan, Ajay K. Yadav, Chenming Hu, and Sayeef Salahuddin, "Negative Capacitance, n-Channel, Si FinFETs: Bi-directional Sub-60 mV/dec, Negative DIBL, Negative Differential Resistance and Improved Short Channel Effect",VLSI, June, 2018.(Accepted)
(2) Hong Zhou, Kerry Maize, Jinhyun Noh, Ali Shakouri, Peide D. Ye, “High Performance Nano-membrane β-Ga2O3 Field-effect Transistors on Sapphire Substrate with Reduced Self-heating Effect”, 223rd ECS meeting, May 2018.Invited Talk.
(3) Hong Zhou, Peide Ye, “Depletion/Enhancement-mode β-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5/1 A/mm and the mechanism of forming Enhancement mode devices”, 48th IEEE Semiconductor Interface Specialists, Conference (SISC), 2017, Oral Presentation.
(4) Hong Zhou Kerry Maize, Jinhyun Noh, and Peide D. Ye, “Minimized Self-heating Effect of β-Ga2O3 Nano-membrane Field-effect Transistors on Sapphire Substrate”, 2nd International Workshop on Gallium Oxide (IWGO), 2017, Oral Presentation.
(5) Hong Zhou and Peide D. Ye, “Depletion/Enhancement-mode β-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5/1 A/mm”, 75th Device Research Conference (DRC), 2017.
(6) Hong Zhou, Mengwei Si, Sami Alghamdi, Gang Qiu, Lingming Yang, and Peide D. Ye, “High performance depletion/enhancement-mode β-Ga2O3 on insulator (GOOI) field-effect-transistor (FET) with record drain current of 600/450 mA/mm”, 47th IEEE Semiconductor Interface Specialists, Conference (SISC), 2016, (Late news) Oral Presentation.
(7) Hong Zhou Xiabing Lou, Kartnn Sutherlin, Jarren Summers, Sang Bok Kim, Kelson D. Chabak, Roy G. Gordon and Peide D. Ye, “DC and RF characterizations of AlGaN/GaN MOSHEMTs with deep sub-micron T-gates and atomic layer epitaxy MgCaO as gate dielectric”, 74th Device Research Conference (DRC), 2016, 1-2, Oral Presentation.
(8) Hong Zhou,, Xiabing Lou, Kartnn Sutherlin, Kelson D. Chabak, Roy G. Gordon and Peide D. Ye, “AlGaN/GaN MOSHEMT with POUT=4.18 W/mm at f=35 GHz Enabled by Atomic Layer Epitaxy MgCaO Dielectric”, International Workshop on Nitride Semiconductors (IWN), 2016, Oral Presentation.
(9) H. Zhou, S. Alghmadi, M. Si, and P. D. Ye, “Determination of Al2O3/β-Ga2O3 Interface Trap Densities Dit Through Photo-Assisted C-V Method”, 2016 Lester Eastman Conference (LEC) on High Performance Devices, 2016.
(10) Hong Zhou Xiabing Lou, Heng Wu, Sami Alghamdi, Shiping Guo, Roy G. Gordon, Peide D. Ye, “InAlN/GaN MOSHEMTs with high drain current of 2.3 A/mm high on/off ratio of 1012 and low SS of 64 mV/dec enabled by atomic-layer-epitaxial MgCaO as gate dielectric”, 73th Device Research Conference (DRC), 2015, 57-58, Oral Presentation.
(11) Hong Zhou, Xiabing Lou, Kelson D. Chabak, R. G. Gordon, and Peide D. Ye, “AlGaN/GaN MOSHEMTs on Si (111) Substrate with High on/off Ratio Low SS and High Off-state Breakdown Voltage Enabled by ALE Single Crystalline MgCaO Gate Dielectric”, 46th IEEE Semiconductor Interface Specialists, Conference (SISC), 2015, Oral Presentation.
(12) Hong Zhou and Peide D. Ye, “Achieving of Ultra High Electron Density on GaN Surface by Ionic Liquid Gating”, 45th IEEE Semiconductor Interface Specialists, Conference (SISC), 2014.
(13) Hong Zhou, Nathan J. Conrad, Shiping Guo, and Peide D. Ye, “Demonstration of InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility-Transistors with ALD La1.8Y0.2O3/Al2O3 as Gate Insulator”, 44th IEEE Semiconductor Interface Specialists, Conference (SISC), 2013.
(14) Kerry Maize, Hong Zhou, Peide D. Ye, and Ali Shakouri, “High resolution thermal imaging of pre-breakdown in power AlGaN/GaN MOSHEMTs”, Reliability Physics Symposium (IRPS), 2017 International, 5C-3.1-5C-3.7.
(15) M. Bhuiyan, H. Zhou, X. Lou, R. Jiang, X. Gong, H. Gong, E. X. Zhang, R. G. Gordon, R. A. Reed, D. M. Fleetwood, P. Ye and T. P. Ma, “Total ionizing dose study of GaN based HEMTs and MOSHEMTs: effects of channel thickness and epitaxial MgCaO as gate dielectric”, IEEE Nuclear and Space Radiation Effects Conference (NSREC), 2017.
(16) LM Yang, G Qiu, MW Si, AR Charnas, CA Milligan, DY Zemlyanov, H Zhou, YC Du, YM Lin, W Tsai, Qing Paduano, M Snure, PD Ye, “Few-layer black phosporous PMOSFETs with BN/Al2O3 bil[ant]ayer gate dielectric: Achieving Ion= 850μA/μm, gm= 340μS/μm, and Rc= 0.58 kΩ• μm”, Electron Devices Meeting (IEDM), 2016 IEEE International, 5.5.1-5.5.4.
(17) M. Bhuiyan, X. Lou, X. Gong, H. Zhou, K. Ni, R. Jiang, H. Gong, E. X. Zhang, R. G. Gordon, R. A. Reed, D. M. Fleetwood, P. Ye and T. P. Ma, “Radiation induced charge trapping in crystalline La2O3 gate dielectric grown on GaAs”, 47th IEEE Semiconductor Interface Specialists, Conference (SISC), 2016.
(18) M. Bhuiyan, H. Zhou, S.-J. Chang, X. Lou, X. Gong, K. Ni, R. Jian, H. Gong, E. X. Zhang, C.-H. Won, R. G. Gordon, J.-W. Lim, J.-H. Lee, R. A. Reed, D. M. Fleetwood, P. Ye and T. P. Ma, “Total ionizing dose effects on GaN-based HEMTs and MOSHEMTs: Effects of channel thickness and crystalline MgCaO as gate dielectric”, 47th IEEE Semiconductor Interface Specialists, Conference (SISC), 2016.
(19) Sami Alghamdi, Hong Zhou, Mengwei Si, and Peide D. Ye, “Comparative study of the Al2O3/β-(-201)Ga2O3 and Al2O3/β-(010)Ga2O3 interfaces through photo-assisted C-V measurements”, 47th IEEE Semiconductor Interface Specialists, Conference (SISC), 2016.
(20) Heng Wu, Wei Luo, Hong Zhou, Mengwei Si, Jinyun Zhang, Peide D. Ye, “First experimental demonstration of Ge 3D FinFET CMOS circuits”, in VLSI Symp. Tech. Dig., Jun. 2015, T58-T59.
(21) Heng Wu, Mengwei Si, Hong Zhou, Peide D. Ye, “Deep sub-100 nm Ge CMOS devices on Si with the recessed S/D and channel”, Electron Devices Meeting (IEDM), 2014 IEEE International, 16.7. 1-16.7. 4.
(22) Adam Neal, Hong Zhou, Yuchen Du, Peide D. Ye, “Superconductivity in Quasi-2D Electron System with Ultra-high Electron Density”, APS March Meeting Abstracts, 52009.
(23) Yuchen Du, Adam Neal, Hong Zhou, Peide D. Ye, “Weak Localization in Bulk Black Phosphorus and Few-Layer Phosphorene”, APS March Meeting Abstracts, L1002.

Honors
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Team
团队教师

博士研究生
硕士研究生

Teaching
目前本人承担的教学任务：

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