西安电子科技大学微电子学院导师教师师资介绍简介-祝杰杰

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基本信息
祝杰杰博士、副教授、硕士生导师

联系方式
通信地址：陕西省西安市太白南路2号,710071
电子邮箱：jjzhu@mail.xidian.edu.cn
办公地点：北校区东大楼214A

招生信息
欢迎有志于从事半导体器件与工艺研究，具有一定半导体器件基础的考生报考

个人简介
祝杰杰，陕西省科技创新团队核心成员，长期在宽带隙半导体技术国家重点学科实验室从事宽禁带氮化镓半导体器件研究。主持了国家重点研发计划课题、基础加强计划子课题、国家自然科学基金、产学研合作项目等多项课题，在IEEE Electron Device Lett.、IEEE Trans. Electron Devices、Appl. Phys. Lett.等国际期刊发表SCI论文50余篇，获授权国家发明专利16项。
教育与工作经历：
2020.07至今西安电子科技大学微电子学院副教授
2019.07-2020.07 英国布里斯托大学物理系博士后
2016.07-2020.07 西安电子科技大学先进材料与纳米科技学院讲师，硕导
2011.08-2016.06 西安电子科技大学材料物理与化学专业工学博士（硕博连读）
2007.09-2011.07 西安电子科技大学电子科学与技术专业工学学士（优秀毕业生）
重要奖励和荣誉：
陕西省科学技术一等奖（2020年度）
陕西省科学技术一等奖（2016年度）
陕西省优秀博士学位论文（2018年度）
学术兼职：
电子信息材料与器件专家委员会委员
IEEE会员、中国电子学会会员

研究方向
1. 宽禁带半导体微波/毫米波功率器件
2. 半导体功率器件及可靠性
3. 半导体表面与界面研究

科研获奖
陕西省科学技术一等奖（2020年度）
陕西省科学技术一等奖（2016年度）

荣誉称号
陕西省优秀博士学位论文（2019年）
西安电子科技大学第二届“三好三有”研究生导学团队（团队导师，2017年）
陕西省电子学会优秀博士学位论文（2017年）
两次获得博士研究生国家奖学金（2014、2015年）

依托平台
宽禁带半导体国家工程研究中心
宽带隙半导体技术国家重点学科实验室
宽禁带半导体材料与器件教育部重点实验室

主要项目支撑
国家重点研发计划课题，毫米波功率器件与芯片，课题负责人.
国家科技重大专项课题，氮化镓**器件，课题骨干.
国家自然科学基金，基于极化调控技术的氮化镓增强型HEMT器件，项目负责人.
基础加强计划重点专项课题，****功率限制机理研究，子课题负责人.
产学研合作项目，功放器件委托研发及可靠性研究，项目负责人.

本科生课堂教学
主讲：《颠覆未来的半导体科技》、《学业指导》
辅导：《半导体物理》、《固体物理》

本科生实践教学
指导大学生科研训练项目：
指导大学生科研训练项目3项。
指导大学生学科竞赛：
西安电子科技大学“校长杯”创新创业大赛，《多功能水域清洁无人船》
指导本科毕业设计：
2019届毕业设计：尹元利（优秀毕业设计）、金萧
2018届毕业设计：王鹏飞

SCI论文
2018
27) Comparative Study on Charge Trapping Induced V_th Shift for GaN-based MOS-HEMTs With and Without Thermal Annealing Treatment
Jiejie Zhu, Xiaohua Ma, Bin Hou, Mi Ma, Qing Zhu, Lixiang Chen, Ling Yang, Peng Zhang, Xiaowei Zhou, Yue Hao.
IEEE Transactions on Electron Devices, 2018, 65(12): 5343-5349. [PDF]
26) Direct observation of gate leakage paths in AlGaN/GaN high electron mobility transistors by electron beam-induced current
Lixiang Chen, Xiaohua Ma, Jiejie Zhu, Bin Hou, Qing Zhu, Meng Zhang, Ling Yang, Jun Yin, Jiafen Wu, and Yue Hao.
IEEE Transactions on Device and Materials Reliability, 2018, 18(3): 359-363. [PDF]
25) Polarization Engineering in PZT/AlGaN/GaN High-Electron-Mobility Transistors
Lixiang Chen, Xiaohua Ma, Jiejie Zhu, Bin Hou, Fang Song, Qing Zhu, Meng Zhang, Ling Yang, and Yue Hao.
IEEE Transactions on Electron Devices, 2018, 65(8): 3149-3155. [PDF]
24) Threshold Voltage Shift and Interface/Border Trapping Mechanism in Al₂O₃/AlGaN/GaN MOSHEMTs
Jiejie Zhu, Bin Hou, Lixiang Chen, Qing Zhu, Ling Yang, Xiaowei Zhou, Peng Zhang, Xiaohua Ma, Yue Hao
IEEE International Reliability Physics Symposium (IRPS), 2018: P-WB.1-1~1-4. [PDF]
23) 0.9 A-mm, 2.6-V Flash-Like Normally-Off Al₂O₃/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique
Bin Hou, Xiaohua Ma, Jiejie Zhu, Ling Yang, Weiwei Chen, Minhan Mi, Qing Zhu, Lixiang Chen, Rong Zhang, Meng Zhang, Xiaowei Zhou, Yue Hao
IEEE Electron Devices Letters, 2018, 39(3): 397-400. [PDF]
22) Ferroelectric gate AlGaN/GaN E-mode HEMTs with high transport and sub-threshold performance
Jiejie Zhu, Lixiang Chen, Jie Jiang, Xiaoli Lu, Ling Yang, Bin Hou, Min Liao, Yichun Zhou, Xiaohua Ma, Yue Hao
IEEE Electron Devices Letters, 2018, 39(1): 79-82. [PDF]
2017
21) Millimeter-wave power AlGaN/GaN HEMT using surface plasma treatment of access region
Minhan Mi, Xiaohua Ma, Ling Yang, Yang Lu, Bin Hou, Jiejie Zhu, Meng Zhang, Hengshuang Zhang, Qing Zhu, Linan Yang, and Yue Hao.
IEEE Transactions on Electron Devices, 2017, 64(12): 4875-4881.
20) 90nm Gate length Enhancement-mode AlGaN/GaN HEMT with plasma oxidation technology for high frequency application
Minhan Mi, Ling Yang, Bin Hou, Jiejie Zhu, Yunlong He, Meng Zhang, Sheng Wu, Xiaohua Ma, Yue Hao.
Applied Physics Letters, 2017, 111(17): 173502.
19) Enhanced g_m and f_T with High Johnson's Figure-of-Merit in thin barrier AlGaN/GaN HEMTs by TiN-based source contact ledge
Ling Yang, Minhan Mi, Bin Hou, Hengshuang Zhang, Jiejie Zhu, et al.
IEEE Electron Devices Letters, 2017, 38(11): 1563-1566.
18) Exponential dependence of capture cross section on activation energy for interface traps in Al₂O₃/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures
Jiejie Zhu, Qing Zhu, Lixiang Chen, Mei Wu, Bin Hou, Ling Yang, Yue Hao, and Xiaohua Ma
Applied Physics Letters, 2017, 111(16): 163502. [PDF]
17) Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure
Ling Yang, Minhan Mi, Bin Hou, Jiejie Zhu, Meng Zhang, Yunlong He, Yang Lu, Qing Zhu, Xiaowei Zhou, Ling Lv, Yanrong Cao, Xiaohua Ma, Yue Hao
IEEE Transactions on Electron Devices, 2017, 64(10): 4057-4064.
16)1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with f_T/f_max of 41/125GHz
Bin Hou, Xiaohua Ma, Ling Yang, Jiejie Zhu, Qing Zhu, Lixiang Chen, Minhan Mi, Hengshuang Zhang, Meng Zhang, Peng Zhang, Xiaowei Zhou, and Yue Hao
Applied Physics Express, 2017, 10(7): 076501.
15) Influence of the built-in electric field induced bby low power fluorine plasma implantation on the reliability of AlGaN-GaNHEMTs
Ling Yang, Bin Hou, Minhan Mi, Jiejie Zhu, Meng Zhang, Qing Zhu, Yunlong He, Lixiang Chen, Xiaowei Zhou, Xiaohua Ma, Yue Hao
IEEE International Reliability Physics Symposium (IRPS), 2017: WB-2.1-WB-2.4.
14) Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-based MIS-HEMTs with Al₂O₃/AlN Gate Stack
Jiejie Zhu, Xiaohua Ma, Qing Zhu,Lixiang Chen, Bin Hou, Ling Yang, and Yue Hao.
IEEE Transactions on Electron Devices, 2017, 64(3): 840-847. [PDF]
13) Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
Jiejie Zhu, Xiaohua Ma, Bin Hou,LixiangChen, Qing Zhu, and Yue Hao.
Materials Research Express, 2017, 4(2):025902.
2016
12) Comparative study on interface and bulk charges in AlGaN/GaN MIS heterostructures with Al₂O₃, AlN, and Al₂O₃/AlN laminated dielectrics
Jiejie Zhu, Xiaohua Ma, Weiwei Chen, Bin Hou, Yong Xie, and Yue Hao.
Japanese Journal of Applied Physics, 2016, 55(5S): 05FH01.
11) Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure
Qing Zhu, Xiaohua Ma, Weiwei Chen, Bin Hou, Jiejie Zhu, Meng Zhang, Lixiang Chen, Yanrong Cao, Yue Hao.
Chinese Physics B, 2016, 25(6): 067305.
2015
10) Investigation of trap states in Al₂O₃InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors
Peng Zhang, Shenglei Zhao, Junshuai Xue, Jiejie Zhu, Xiaohua Ma, Jincheng Zhang, Yue Hao.
Chinese Physics B, 2015, 24(12): 127306.
9) Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors
Bin Hou, Xiaohua Ma, Weiwei Chen, Jiejie Zhu, Shenglei Zhao, Yonghe Chen, Yong Xie, Jincheng Zhang and Yue Hao.
Applied Physics Letters, 2015, 107(16): 163503.
8) Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
Jiejie Zhu, Xiaohua Ma, Yong Xie, Bin Hou, Weiwei Chen, Jincheng Zhang, and Yue Hao.
IEEE Transactions on Electron Devices, 2015, 62(2): 512-518. [PDF]
2014
7) Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress
Weiwei Chen, Xiaohua Ma, Bin Hou, Jiejie Zhu, Yonghe Chen, Xuefeng Zheng, Jincheng Zhang, and Yue Hao.
Applied Physics Letters, 2014, 105(17): 173507.
6) Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress
Weiwei Chen, Xiaohua Ma, Bin Hou, Shenglei Zhao, Jiejie Zhu, Jincheng Zhang, Yue Hao.
Microelectronics Reliability, 2014, 54(6-7):1293-1298.
5) Investigation of gate leakage mechanism in Al₂O₃/Al_0.55Ga_0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors
Jiejie Zhu, Xiaohua Ma, Bin Hou, Weiwei Chen, Yue Hao.
Applied Physics Letters, 2014, 104(15): 153510. [PDF]
4) Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis
Jiejie Zhu, Xiaohua Ma, Bin Hou, Weiwei Chen, and Yue Hao.
AIP Advances, 2014, 4(3): 037108.
3) Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors
Xiaohua Ma, Weiwei Chen, Bin Hou, Kai Zhang, Jiejie Zhu, Jincheng Zhang, Xuefeng Zheng, and Yue Hao.
Applied Physics Letters, 2014, 104(9): 093504.
2013
2) Quantitative characterization of interface traps in Al₂O₃/AlGaN/GaN MOS-HEMTs by dynamic capacitance dispersion technique
Xiaohua Ma, Jiejie Zhu, Xueyang Liao, Tong Yue, Weiwei Chen, and Yue Hao.
Applied Physics Letters, 2013, 103(3): 033510. [PDF]
1) The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress
Weiwei Chen, Xiaohua Ma, Bin Hou, Jiejie Zhu, Jincheng Zhang, Yue Hao.
Chinese Physics B, 2013, 22(10): 107303.

国际会议报告
Jiejie Zhu, Qing Zhu, Lixiang Chen, Bin Hou, Ling Yang, Xiaohua Ma, Yue Hao. High-temperature interface and transport properties of AlGaN/GaN recess-gate MIS-HEMTs with Al₂O₃/AlN gate stack. The 8th Asia- Pacific Workshop on Widegap Semiconductors, Qingdao, Sept. 25-27, 2017. (Oral presentation)
Jiejie Zhu, Xiaohua Ma, Weiwei Chen, et al. Interface engineering and characterization of AlGaN/GaN MIS heterostructures. The 6th International Symposium on Growth of III-Nitrides (ISGN-6), Hamamatsu, Japan, Nov. 8-13, 2015. (Invited talk)
Jiejie Zhu, Xiaohua Ma, Bin Hou, et al. Impact of Nitride and Oxide Gas Plasma Exposure on the Interface Properties of AlGaN/GaN MIS-HEMTs with AlN Gate Dielectrics. The 11th International Conference on Nitride Semiconductors, Peking University, Beijing, China, Aug. 30-Sep. 4, 2015. (Oral presentation)
Jiejie Zhu, Xiaohua Ma, Bin Hou, et al. Performance Improvement of AlGaN/GaN MIS-HEMTs with Remote Plasma Treatment and PEALD-Grown AlN Insulator. The Compound Semiconductor Week 2015, University of California, Santa Barbara, CA USA., June 28-July 2, 2015. (Oral presentation)
Jiejie Zhu, Xiaohua Ma, Weiwei Chen, et al. High Performance AlGaN/GaN MIS-HEMTs with PEALD-Grown AlN insulator and High-Power Remote Plasma Treatment. The 7th Asia- Pacific Workshop on Widegap Semiconductors, Seoul, Korea, May 17-20, 2015. (Oral presentation)
Jiejie Zhu, Xiaohua Ma. Remote Plasma Enhanced ALD for III-N Technology. The 2nd International Conference on ALD Applications & 3rd China ALD conference, Fudan University, Shanghai, Oct. 16-17, 2014. (Oral presentation)