教学内容安排与学习大纲(Teaching Contents and Syllabus):1. Introduction Materials processing Plasma and sheaths, discharges symbols and units 2. Basic plasma equations and equilibrium Introduction, field equations, current and voltage Conservation equations Equilibrium properties3. Atomic collisions Basic concepts, collision dynamics Elastic scattering Inelastic collisions, average over distributions, surface effects 4. Plasma dynamics Basic motions Nonmagnetized plasma dynamics 5. Diffusion and transport Basic relations Diffusion solutions Low pressure solutions 6. DC sheaths Basic concept and equations, Bohm sheath criterion High voltage sheath Electronegative sheaths, collisional sheath Electrostatic probe diagnostics 7. Chemical reactions and equilibrium Introduction, energy and enthalphy, entropy and Gibbs fre e energy Chemical equilibrium Heterogeneous equilibrium 8. Molecular collisions Introduction, molecular structure, electron collisions wi th molecules Heavy particle collisions, reaction rates and detailed ba lancing Optical emission and actinometry 9. Chemical kinetics and surface processes Elementary reactions Gas phase kinetics Surface processes Surface kinetics 10. Particle and energy balance in discharges Introduction, electropositive plasma equilibrium Electronegative discharge equilibrium & 10.3 \\ \\ 11. Capacitive discharges Homogenous model Inhomogenous model Asymmetric discharges and matching networks12. Inductive discharges High density low pressure discharges Operating regimes, planar coil configuration13. Wave heated discharges Electron cyclotron resonance discharges14. DC Discharges Qualitative characteristics of glow discharges Analysis of the positive column Planar magnetron discharges 15. Etching Etch requirements and processes Etching kinetics Halogen atom etching of silicon16. Deposition and Implantation

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• Michael A. Lieberman, Allan J. Lichtenberg: Principles of Plasma Discharges and Materials Processing, 2nd. ed., John Wiley & Sons 2005.