外文题目: Controlling n-type conductivity of beta-Ga2O3 by Nb doping
作者: Zhou, Wei; Xia, Changtai; Sai, Qinglin; Zhang, Hongzhe
刊名: Appl. Phys. Lett.
年: 2017 卷: 111 期: 24 文章编号：242103
英文关键词:

LUMINESCENCE
英文摘要:
It has been confirmed that Si, Sn, and Ge are effective n-type dopants for beta-Ga2O3. This letter shows that Nb doping Is also a viable method for controlling the electrical resistivity and carrier density of beta-Ga2O3, corresponding to the theoretical calculations about the doping of Ga2O3 with Nb [H. Peelaers and C. G. Van de Walle, Phys. Rev. B 94(19), 4 (2016)]. beta-Ga2O3 single crystals with different Nb concentrations were grown by the optical floating zone method. The electrical resistivity can be varied from 3.6 x 10(2) Omega cm to 5.5 x 10(-3) Omega cm by increasing the Nb doping concentration, and the related free carrier concentration increases from 9.55 x 10(16)cm(-3) to 1.8 x 10(19)cm(-3). The transmittance spectra and photoluminescence spectra were measured to systematically study the optical properties of Nb-doped beta-Ga2O3 single crystals. The strong absorption near the IR region In the crystals is related to the Increase in conductive electrons, and the decrease in blue luminescence intensity indicates a decrease in the V-O concentration induced by increasing the carrier concentration. Published by AIP Publishing.


文献类型: 期刊论文
正文语种: English
收录类别: SCI
DOI: 10.1063/1.4994263


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