外文题目: Silicon carbide doped Sb2Te3 nanomaterial for fast-speed phase change memory
作者: Meng, Yun; Wu, Liangcai; Song, Zhitang; Wen, Shuai; Jiang, Minghui; Wei, Jingsong; Wang, Yang
刊名: Mater. Lett.
年: 2017 卷: 201 页： 109--113
英文关键词:
Nano-composite; Thin film; Rapid transition; Large reflectivity ratio
FILMS
英文摘要:
In this study, doping of Sb2Te3 with silicon carbide has been proposed to enhance the optical and electrical properties of Sb2Te3. The silicon carbide-doped Sb2Te3 (Sb2Te3-SiC)-based phase change memory cell can be triggered by a 10 ns electric pulse, indicating its excellent electrical properties. Furthermore, ferntosecond pulses are used to study the reversible phase transition processes. The large reflectivity ratio of Sb2Te3-SiC is beneficial for achieving distinguishable logical states in optical applications. X-ray diffraction and transmission electron microscopy results show the SiC doping plays an important role in refining the grain size of Sb2Te3, producing smaller grain. (C) 2017 Elsevier B.V. All rights reserved.


文献类型: 期刊论文
正文语种: English
收录类别: SCI
DOI: 10.1016/j.matlet.2017.05.003


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