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Parasitic lasing in large aperture Ti: sapphire chirped pulse amplifier_上海光学精密机械研究所

上海光学精密机械研究所 免费考研网/2018-05-06

外文题目: Parasitic lasing in large aperture Ti: sapphire chirped pulse amplifier
作者: Fan, Zutao; Gan, Zebiao; Liang, Xiaoyan; Yu, Lianghong; Li, Wenqi; Guo, Zhen; Yuan, Xiaolong; Cao, He; Huang, Pei; Li, Ruxin; Xu, Zhizhan
刊名: Chin. Opt. Lett.
年: 2017 卷: 15 期: 6 文章编号:61401
英文关键词:

IMPLEMENTATION
英文摘要:
We research some properties of parasitic lasing (PL) in the Ti: sapphire chirped pulse amplifier with the crystal diameter of 100 mm. The evolutionary process from the spontaneous emission to the PL and its influence on amplified output energy, spectrum, and beam profile are experimentally measured. The threshold of PL in the crystal is 22 J, and the output signal can still keep rising with the pump when the pump energy is below 38 J. The PL has no obvious impact on the output spectrum and beam profile besides the energy.


文献类型: 期刊论文
正文语种: English
收录类别: SCI
DOI: 10.3788/COL201715.061401


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