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Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias

上海光学精密机械研究所 免费考研网/2018-05-06

外文题目: Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias
作者: He, Fei; Yu, Junjie; Tan, Yuanxin; Chu, Wei; Zhou, Changhe; Cheng, Ya; Sugioka, Koji
刊名: Sci Rep
年: 2017 卷: 7 文章编号:40785
英文关键词:

LASER-PULSES; TRANSPARENT MATERIALS; WAVE-GUIDES; SUPERRESOLUTION; FABRICATION; GENERATION; SUBSTRATE; ABLATION; AXICON; ARRAYS
英文摘要:
Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-mu m Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately circle divide 10-mu m TSVs on a 100-mu m-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.


文献类型: 期刊论文
正文语种: English
收录类别: SCI
DOI: 10.1038/srep40785


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