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Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpic

上海光学精密机械研究所 免费考研网/2018-05-06

外文题目: Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation
作者: Wang, Hu; Qi, Hongji; Zhao, Jiaoling; Wang, Bin; Shao, Jianda
刊名: Opt. Commun.
年: 2017 卷: 387 页: 214--222
英文关键词:
Laser damage; Thin films; Laser-induced breakdown
LASER-INDUCED DAMAGE; THIN-FILMS; PULSE DURATION; FEMTOSECOND; THRESHOLD; ABSORPTION; MECHANISMS; REFLECTOR; BREAKDOWN; COATINGS
英文摘要:
Damage behavior of HfO2 and SiO2 films under subpicosecond irradiation is investigated experimentally and theoretically in this work. The typical damage phenomenon is the transition from isolated submicrometer pits to integral ablation at transitive threshold. The experimental damage thresholds for both coatings are consistent with the theoretical calculation. The rate equation considering the feedback effect of electron number density is applied to calculate the deposited energy density, which illustrates the evolution of damage morphology.


文献类型: 期刊论文
正文语种: English
收录类别: SCI
DOI: 10.1016/j.optcom.2016.11.012


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