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High-speed maskless nanolithography with visible light based on photothermal localization_上海光学精密机械研究

上海光学精密机械研究所 免费考研网/2018-05-06

外文题目: High-speed maskless nanolithography with visible light based on photothermal localization
作者: Wei, Jingsong; Zhang, Kui; Wei, Tao; Wang, Yang; Wu, Yiqun; Xiao, Mufei
刊名: Sci Rep
年: 2017 卷: 7 文章编号:43892
英文关键词:

THIN-FILMS; LITHOGRAPHY; PHOTOLITHOGRAPHY; METASURFACES
英文摘要:
High-speed maskless nanolithography is experimentally achieved on AgInSbTe thin films. The lithography was carried out in air at room temperature, with a GaN diode laser (lambda = 405 nm), and on a large sample disk of diameter 120 mm. The normal width of the written features measures 46 +/- 5 nm, about 1/12 of the diffraction allowed smallest light spot, and the lithography speed reaches 6 +/- 8 m/s, tens of times faster than traditional laser writing methods. The writing resolution is instantaneously tunable by adjusting the laser power. The reason behind the significant breakthrough in terms of writing resolution and speed is found as the concentration of light induced heat. Therefore, the heat spot is far smaller than the light spot, so does the size of the written features. Such a sharp focus of heat occurs only on the selected writing material, and the phenomenon is referred as the photothermal localization response. The physics behind the effect is explained and supported with numerical simulations.


文献类型: 期刊论文
正文语种: English
收录类别: SCI
DOI: 10.1038/srep43892


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