外文题目: Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy
作者: Tian, Zhen; Guo, Chenglei; Zhao, Mingxing; Li, Ranran; Xue, Jiamin
刊名: ACS Nano
年: 2017 卷: 11 期: 2 页： 2219--2226
英文关键词:

DEPENDENT RAMAN RESPONSES; FIELD-EFFECT TRANSISTORS; BLACK PHOSPHORUS; 2D SEMICONDUCTOR; NANOSHEETS; CRYSTALS; GRAPHENE; MOBILITY; MODES; FILM
英文摘要:
We study the anisotropic electronic properties of two-dimensional (2D) SnS, an analogue of phosphorene, grown by physical vapor transport. With transmission electron microscopy and polarized Raman spectroscopy, we identify the zigzag and armchair directions of the as-grown 2D crystals. The 2D SnS field-effect transistors with a cross Hall-bar structure are fabricated. They show heavily hole-doped (similar to 10(19) cm(-3)) conductivity with strong in-plane anisotropy. At room temperature, the mobility along the zigzag direction exceeds 20 cm(2) V-1 s(-1), which can be up to 1.7 times that in the armchair direction. This strong anisotropy is then explained by the effective mass ratio along the two directions and agrees well with previous theoretical predictions. Temperature-dependent carrier density determined the acceptor energy level to be similar to 45 meV above the valence band maximum. This value matches a calculated defect level of 42 meV for Sn vacancies, indicating that Sn deficiency is the main cause of the p-type conductivity.


文献类型: 期刊论文
正文语种: English
收录类别: SCI
DOI: 10.1021/acsnano.6b08704


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