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Interface characterization of Mo/Si multilayers_上海光学精密机械研究所

上海光学精密机械研究所 免费考研网/2018-05-06

外文题目: Interface characterization of Mo/Si multilayers
作者: 赵娇玲; 贺洪波; 王虎; 易葵; 王斌; 崔云
刊名: Chin. Opt. Lett.
年: 2016 卷: 14 期: 8 文章编号:83401
英文关键词:

MIRRORS; MO; TRANSITION; DIFFUSION; SILICON; FILMS; NM
英文摘要:
Complementary analysis techniques are applied in this work to study the interface structure of Mo/Si multilayers. The samples are characterized by grazing incident x-ray reflectivity, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and extreme ultraviolet reflectivity. The results indicate that the layer thickness is controlled well with small diffusion on the interface by forming MoSi2. Considering MoSi2 as the interface composition, simulating the result of our four-layer model fits well with the measured reflectivity curve at 13.5 nm.


文献类型: 期刊论文
正文语种: English
收录类别: SCIEI
DOI: 10.3788/COL201614.083401


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