外文题目: Characterization of vertical Au/beta-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer
作者: 刘兴钊; 岳超; 夏长泰; 张万里
刊名: Chin. Phys. B
年: 2016 卷: 25 期: 1 文章编号：17201
英文关键词:
gallium oxides thin films Schottky diode; ultraviolet photodetector
MOLECULAR-BEAM EPITAXY; GA2O3; NANOWIRES; FILM
英文摘要:
High-resistivity beta-Ga2O3 thin films were grown on Si-doped n-type conductive beta-Ga2O3 single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6 x 10(6) Omega. The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4 x 10(18) cm(-3) and 7.6 V, respectively. The ultra-violet (UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7 x 10(2)% were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive beta-Ga2O3 thin films and the n-type conductive beta-Ga2O3 single-crystal substrate.


文献类型: 期刊论文
正文语种: English
收录类别: SCI
DOI: 10.1088/1674-1056/25/1/017201


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