外文题目: Characterization and FDTD simulation analysis on light trapping structures of amorphous silicon thin films by laser irradiation
作者: Huang, Lu; Jin, Jing; Yuan, Zhijun; Yang, Weiguang; Wang, Linjun; Shi, Weimin; Zhou, Jun; Lou, Qihong
刊名: Superlattices Microstruct.
年: 2016 卷: 93 页： 290--296
英文关键词:
Light trapping; Amorphous silicon; Finite difference time domain; Laser irradiation
ALUMINUM-INDUCED CRYSTALLIZATION; SOLAR-CELLS; POLYCRYSTALLINE SILICON; TRANSISTORS; NANOWIRES; SI
英文摘要:
The effect of laser energy density on the light-trapping structures of amorphous silicon (alpha-Si) thin films is studied both theoretically and experimentally. The thin films are irradiated by a frequency-doubled (lambda = 532 nm) Nd:YAG pulsed nanosecond laser. An effective finite difference time domain (FDTD) model is built to find the optimized laser energy density (E-L) for the light trapping structures of alpha-Si. Based on the simulation analysis, it shows the variation of reflection spectra with laser energy density. The optimized reflection spectra at E-L = 1000 mJ/cm(2) measured by UV-visible spectroscopy confirms to agree well with that corresponding to the depth to diameter ratio (h/D) in the FDTD simulation. The surface morphology characterization by optical microscope (OM) and scanning electron microscope (SEM) accords fairly well to of light-trapping modeling in the simulation. (C) 2016 Elsevier Ltd. All rights reserved.


文献类型: 期刊论文
正文语种: English
收录类别: SCIEI
DOI: 10.1016/j.spmi.2016.03.037


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