外文题目: Ho:LaF3 single crystal as potential material for 2 mu m and 2.9 mu m lasers
作者: Hong, Jiaqi; Zhang, Lianhan; Zhang, Peixiong; Xu, Min; Hang, Yin
刊名: Infrared Phys. Technol.
年: 2016 卷: 76 页： 636--640
英文关键词:
Optical property; Single crystal
SPECTROSCOPIC PROPERTIES; CROSS-SECTIONS; ENERGY-LEVELS; HO3+; HOLMIUM; LAF3; ABSORPTION; EMISSION; GROWTH; TM
英文摘要:
Optical properties of a Ho-doped LaF3 single crystal have been detailed investigated as a promising material for 2 mu m and 2.9 mu m lasers for the first time. Judd-Ofelt theory was applied to analyze the absorption spectrum to determine the J-O intensity parameters Omega(t(t=2,4,6)), based on which the emission probabilities, branching ratio and radiative lifetime for the as-grown crystal were all calculated. The stimulated emission cross-sections of the I-5(7) -> I-5(8) and I-5(6) -> I-5(7) transitions were obtained by using the Fuchtbauer-Ladenburg method. The gain cross-section for 2 mu m emission becomes positive once the population inversion level reaches 30%. The Ho:LaF3 crystal shows long fluorescence lifetime of I-5(7) manifold (25.81 ms) as well as I-5(6) manifold (10.37 ms) compared with other Ho3+-doped crystals. It can be proposed that the Ho:LaF3 crystal may be a promising material for 2 mu m and 2.9 mu m laser applications. (C) 2016 Elsevier B.V. All rights reserved.


文献类型: 期刊论文
正文语种: English
收录类别: SCIEI
DOI: 10.1016/j.infrared.2016.04.024


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