外文题目: Field-effect transistors of high-mobility few-layer SnSe2
作者: Guo, Chenglei; Tian, Zhen; Xiao, Yanjun; Mi, Qixi; Xue, Jiamin
刊名: Appl. Phys. Lett.
年: 2016 卷: 109 期: 20 文章编号：203104
英文关键词:

THERMAL-CONDUCTIVITY; BAND-STRUCTURE; HOLE MOBILITY; MOS2; SEMICONDUCTOR; CRYSTALS
英文摘要:
We report the transport properties of mechanically exfoliated few-layer SnSe2 flakes, whose mobility is found to be similar to 85 cm(2) V-1 s(-1) at 300 K, higher than those of the majority of few-layer transitional metal dichalcogenides. The mobility increases strongly with decreased temperature, indicating a phonon limited transport. The conductivity of the semiconducting SnSe2 shows a metallic behavior, which is explained by two competing factors involving the different temperature dependence of mobility and carrier density. The Fermi level is found to be 87 meV below the conduction band minima (CBM) at 300K and 12 meV below the CBM at 78 K, resulting from a heavy n-type doping. Previous studies have found SnSe2 field-effect transistors to be very difficult to turn off. We find the limiting factor to be the flake thickness compared with the maximum depletion width. With fully depleted devices, we are able to achieve a current on-off ratio of similar to 10(5). These results demonstrate the great potential of SnSe2 as a two dimensional (2D) semiconducting material and are helpful for our understanding of other heavily doped 2D materials. Published by AIP Publishing.


文献类型: 期刊论文
正文语种: English
收录类别: SCIEI
DOI: 10.1063/1.4967744


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