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Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon_上海光学精密机械研

上海光学精密机械研究所 免费考研网/2018-05-06

外文题目: Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon
作者: Bai, Feng; Li, Hong-Jin; Huang, Yuan-Yuan; Fan, Wen-Zhong; Pan, Huai-Hai; Wang, Zhuo; Wang, Cheng-Wei; Qian, Jing; Li, Yang-Bo; Zhao, Quan-Zhong
刊名: Chem. Phys. Lett.
年: 2016 卷: 662 页: 102--106
英文关键词:
Amorphization; Silicon; Femtosecond laser; Polarization effect
AMORPHOUS-SILICON; INDUCED CRYSTALLIZATION; THIN-FILMS; RAMAN-SPECTROSCOPY; VOLUME FRACTION; SI; PULSES; IRRADIATION; ABLATION
英文摘要:
We have used femtosecond laser pulses to ablate monocrystalline silicon wafer. Raman spectroscopy and X-ray diffraction analysis of ablation surface indicates horizontally polarized laser beam shows an enhancement in amorphization efficiency by a factor of 1.6-1.7 over the circularly polarized laser ablation. This demonstrates that one can tune the amorphization efficiency through the polarization of irradiation laser. (C) 2016 Elsevier B.V. All rights reserved.


文献类型: 期刊论文
正文语种: English
收录类别: SCIEI
DOI: 10.1016/j.cplett.2016.08.080


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