外文题目: High-power single-chip GaN-based white LED with 3058 lm
作者: Ding, Mingdi; Zhang, Yibin; Xu, Jianwei; Zhao, Desheng; Huang, Hongjuan; Xu, Xin; Miao, Zhenlin; He, Peng; Wang, Yanming; Dong, Yongjun; Zhang, Baoshun; Cai, Yong
刊名: Electron. Lett.
年: 2016 卷: 52 期: 25 页： 2050--2051
英文摘要:
A high-power phosphor-converted white LED with 3058 lm is reported. The high-power white LED was manufactured by utilising a single-blue LED chip with a cerium-doped yttrium aluminium garnet phosphor crystal film, and the LED chip consists of 16 LED cells that are connected in series, the chip dimensions are of 4.5 x 4.5 mm(2). The electrical and optical characteristics of the LED were measured up to a 500 mA injection current under direct operation conditions. Results show that the luminous flux and luminous efficacy at 500 mA reach to 3058 lm and 128 lm/W, respectively.


文献类型: 期刊论文
正文语种: English
收录类别: SCIEI
DOI: 10.1049/el.2016.2789


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